Low temperature and ion-cut based monolithic 3D process integration platform incorporated with CMOS, RRAM and photo-sensor circuits

Hoonhee Han, Rino Choi, Seong Ook Jung, Sung Woo Chung, Byung Jin Cho, S. C. Song, Changhwan Choi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrated low temperature (< 500 °C) and hydrogen ion-cut based monolithic 3D (M3D) process integration platform with CMOS circuits, memory devices and photo-sensitive sensors. Top Si layer was transferred on the 8-inch bottom Si substrate having standard CMOS circuits using hydrogen ion implantation, bonding and cleavage under low thermal annealing. Ta2O5-RRAM and a-IGZO photo detector devices on the upper transferred Si layer were vertically stacked with CMOS circuits. Bonding and top Si layer transfer are considerably affected by ion implantation process, ILD, surface treatment, oxide CMP and annealing. Different light intensity to photodetector at the upper layer modulates the frequency of current sensor with 21 stage ring- oscillator at the lower layer and current level in RRAM at the upper layer is also modulated by input frequency from CMOS devices. The functionalities of ion-cut based M3D integration platform are confirmed by higher frequency and current level with respect to light intensity.

Original languageEnglish
Title of host publication2020 IEEE International Electron Devices Meeting, IEDM 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages15.6.1-15.6.4
ISBN (Electronic)9781728188881
DOIs
Publication statusPublished - 2020 Dec 12
Event66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States
Duration: 2020 Dec 122020 Dec 18

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2020-December
ISSN (Print)0163-1918

Conference

Conference66th Annual IEEE International Electron Devices Meeting, IEDM 2020
CountryUnited States
CityVirtual, San Francisco
Period20/12/1220/12/18

Bibliographical note

Funding Information:
This research was supported by the Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by Ministry of science, ICT & Future Planning (NRF-2015M3A7B7045490, NRF-2020M3F3A2A02082449) as well as Qualcomm Technology Inc.

Publisher Copyright:
© 2020 IEEE.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Low temperature and ion-cut based monolithic 3D process integration platform incorporated with CMOS, RRAM and photo-sensor circuits'. Together they form a unique fingerprint.

Cite this