We demonstrated low temperature (< 500 °C) and hydrogen ion-cut based monolithic 3D (M3D) process integration platform with CMOS circuits, memory devices and photo-sensitive sensors. Top Si layer was transferred on the 8-inch bottom Si substrate having standard CMOS circuits using hydrogen ion implantation, bonding and cleavage under low thermal annealing. Ta2O5-RRAM and a-IGZO photo detector devices on the upper transferred Si layer were vertically stacked with CMOS circuits. Bonding and top Si layer transfer are considerably affected by ion implantation process, ILD, surface treatment, oxide CMP and annealing. Different light intensity to photodetector at the upper layer modulates the frequency of current sensor with 21 stage ring- oscillator at the lower layer and current level in RRAM at the upper layer is also modulated by input frequency from CMOS devices. The functionalities of ion-cut based M3D integration platform are confirmed by higher frequency and current level with respect to light intensity.
|Title of host publication||2020 IEEE International Electron Devices Meeting, IEDM 2020|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Publication status||Published - 2020 Dec 12|
|Event||66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States|
Duration: 2020 Dec 12 → 2020 Dec 18
|Name||Technical Digest - International Electron Devices Meeting, IEDM|
|Conference||66th Annual IEEE International Electron Devices Meeting, IEDM 2020|
|City||Virtual, San Francisco|
|Period||20/12/12 → 20/12/18|
Bibliographical noteFunding Information:
This research was supported by the Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by Ministry of science, ICT & Future Planning (NRF-2015M3A7B7045490, NRF-2020M3F3A2A02082449) as well as Qualcomm Technology Inc.
© 2020 IEEE.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry