Low temperature annealing behaviors of the titanium films formed by the ionized sputtering process on (001) silicon substrates

Eun Ha Kim, Dae Hong Ko, Siyoung Choi, Bong Young Yoo, Hyeon Deok Lee

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We investigated the low temperature reactions between the Ti films created by the ionized sputtering process and the (001) single crystal silicon wafers using high resolution transmission electron microscopy and x-ray diffractometry. We observed that the amorphous Ti-Si intermixed layer is formed at the Ti-Si interface whose thickness increased with the thickness of the deposited Ti films. The amorphous interlayer grew upon annealing treatments at the temperatures below 450 °C. We also observed that the crystallization of the amorphous interlayer occurred upon annealing at 500 °C. The first formed phase is Ti5Si3 in contact with Ti films, which is epitaxial with Ti films. Upon further annealing at 500 °C, the Ti5Si4 phase and C49 TiSi2 phase formed in the regions close to Ti films and Si substrates, respectively.

Original languageEnglish
JournalJournal of Electronic Materials
Volume28
Issue number10
DOIs
Publication statusPublished - 1999 Jan 1

Fingerprint

Silicon
Titanium
Sputtering
titanium
sputtering
Annealing
annealing
silicon
Substrates
interlayers
Temperature
High resolution transmission electron microscopy
Crystallization
Silicon wafers
Single crystals
wafers
crystallization
X rays
transmission electron microscopy
high resolution

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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title = "Low temperature annealing behaviors of the titanium films formed by the ionized sputtering process on (001) silicon substrates",
abstract = "We investigated the low temperature reactions between the Ti films created by the ionized sputtering process and the (001) single crystal silicon wafers using high resolution transmission electron microscopy and x-ray diffractometry. We observed that the amorphous Ti-Si intermixed layer is formed at the Ti-Si interface whose thickness increased with the thickness of the deposited Ti films. The amorphous interlayer grew upon annealing treatments at the temperatures below 450 °C. We also observed that the crystallization of the amorphous interlayer occurred upon annealing at 500 °C. The first formed phase is Ti5Si3 in contact with Ti films, which is epitaxial with Ti films. Upon further annealing at 500 °C, the Ti5Si4 phase and C49 TiSi2 phase formed in the regions close to Ti films and Si substrates, respectively.",
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Low temperature annealing behaviors of the titanium films formed by the ionized sputtering process on (001) silicon substrates. / Kim, Eun Ha; Ko, Dae Hong; Choi, Siyoung; Yoo, Bong Young; Lee, Hyeon Deok.

In: Journal of Electronic Materials, Vol. 28, No. 10, 01.01.1999.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Low temperature annealing behaviors of the titanium films formed by the ionized sputtering process on (001) silicon substrates

AU - Kim, Eun Ha

AU - Ko, Dae Hong

AU - Choi, Siyoung

AU - Yoo, Bong Young

AU - Lee, Hyeon Deok

PY - 1999/1/1

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AB - We investigated the low temperature reactions between the Ti films created by the ionized sputtering process and the (001) single crystal silicon wafers using high resolution transmission electron microscopy and x-ray diffractometry. We observed that the amorphous Ti-Si intermixed layer is formed at the Ti-Si interface whose thickness increased with the thickness of the deposited Ti films. The amorphous interlayer grew upon annealing treatments at the temperatures below 450 °C. We also observed that the crystallization of the amorphous interlayer occurred upon annealing at 500 °C. The first formed phase is Ti5Si3 in contact with Ti films, which is epitaxial with Ti films. Upon further annealing at 500 °C, the Ti5Si4 phase and C49 TiSi2 phase formed in the regions close to Ti films and Si substrates, respectively.

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