Low temperature atomic layer deposition of ruthenium thin films using isopropylmethylbenzene-cyclohexadiene-ruthenium and O 2

Tae Kwang Eom, Windu Sari, Kyu Jeong Choi, Woong Chul Shin, Jae Hyun Kim, Do Joong Lee, Ki Bum Kim, Hyunchul Sohn, Soo Hyun Kim

Research output: Contribution to journalArticle

52 Citations (Scopus)

Abstract

Ru thin films were deposited by atomic layer deposition (ALD) through alternating exposures of a metallorganic precursor, C 16 H 22 Ru [(η6 -1-isopropyl-4-methylbenzene) (η4 -cyclohexa-1,3-diene)ruthenium(0)] and O 2 at 220°C. The growth rate was 0.1 and 0.086 nm/cycle on TiN and thermally grown SiO 2 , respectively. On both substrates, negligible incubation cycles were observed indicating that Ru nucleation was enhanced compared to the results obtained using the cyclopentadienyl-based Ru precursors. Plan-view transmission electron microscopy analysis revealed the formation of a continuous Ru film with a thickness of ∼3.5 nm after only 50 ALD cycles. The step coverage was approximately 100% over the contact holes (top opening diameter was 89 nm) with a high aspect ratio (24:1).

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume12
Issue number11
DOIs
Publication statusPublished - 2009 Sep 18

Fingerprint

Ruthenium
Atomic layer deposition
atomic layer epitaxy
ruthenium
Thin films
cycles
thin films
Aspect ratio
Nucleation
dienes
Transmission electron microscopy
high aspect ratio
Temperature
electric contacts
Substrates
nucleation
transmission electron microscopy
1,4-cyclohexadiene

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Eom, Tae Kwang ; Sari, Windu ; Choi, Kyu Jeong ; Shin, Woong Chul ; Kim, Jae Hyun ; Lee, Do Joong ; Kim, Ki Bum ; Sohn, Hyunchul ; Kim, Soo Hyun. / Low temperature atomic layer deposition of ruthenium thin films using isopropylmethylbenzene-cyclohexadiene-ruthenium and O 2 In: Electrochemical and Solid-State Letters. 2009 ; Vol. 12, No. 11.
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Low temperature atomic layer deposition of ruthenium thin films using isopropylmethylbenzene-cyclohexadiene-ruthenium and O 2 . / Eom, Tae Kwang; Sari, Windu; Choi, Kyu Jeong; Shin, Woong Chul; Kim, Jae Hyun; Lee, Do Joong; Kim, Ki Bum; Sohn, Hyunchul; Kim, Soo Hyun.

In: Electrochemical and Solid-State Letters, Vol. 12, No. 11, 18.09.2009.

Research output: Contribution to journalArticle

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T1 - Low temperature atomic layer deposition of ruthenium thin films using isopropylmethylbenzene-cyclohexadiene-ruthenium and O 2

AU - Eom, Tae Kwang

AU - Sari, Windu

AU - Choi, Kyu Jeong

AU - Shin, Woong Chul

AU - Kim, Jae Hyun

AU - Lee, Do Joong

AU - Kim, Ki Bum

AU - Sohn, Hyunchul

AU - Kim, Soo Hyun

PY - 2009/9/18

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N2 - Ru thin films were deposited by atomic layer deposition (ALD) through alternating exposures of a metallorganic precursor, C 16 H 22 Ru [(η6 -1-isopropyl-4-methylbenzene) (η4 -cyclohexa-1,3-diene)ruthenium(0)] and O 2 at 220°C. The growth rate was 0.1 and 0.086 nm/cycle on TiN and thermally grown SiO 2 , respectively. On both substrates, negligible incubation cycles were observed indicating that Ru nucleation was enhanced compared to the results obtained using the cyclopentadienyl-based Ru precursors. Plan-view transmission electron microscopy analysis revealed the formation of a continuous Ru film with a thickness of ∼3.5 nm after only 50 ALD cycles. The step coverage was approximately 100% over the contact holes (top opening diameter was 89 nm) with a high aspect ratio (24:1).

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