Abstract
Single crystalline GaN nanowires, with 100 nm typical diameters, were grown by chemical vapor deposition method, using Pt catalyst, and characterized by cathodoluminescence and electron beam induced current (EBIC) measurements at 5 K. The near band edge emission was found to be asymmetric and broad, with full width half maximum of around 150 meV, peaking at 3.55 eV, well above the GaN bulk band gap. This blueshift was ascribed to band filling effect resulting from unintentional n-type doping in the range 10 19-10 20cm -3. Despite of this heavy doping, EBIC experiments showed that minority carriers can diffuse over 0.2 μm.
| Original language | English |
|---|---|
| Article number | 153110 |
| Journal | Applied Physics Letters |
| Volume | 100 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - 2012 Apr 9 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Low temperature cathodoluminecence and electron beam induced current studies of single GaN nanowires. / Oh, Eunsoon; Lee, Byoung Woo; Shim, So Jeong; Choi, Heon Jin; Son, Byoung Hee; Ahn, Yeong Hwan; Dang, Le Si.
In: Applied Physics Letters, Vol. 100, No. 15, 153110, 09.04.2012.Research output: Contribution to journal › Article
TY - JOUR
T1 - Low temperature cathodoluminecence and electron beam induced current studies of single GaN nanowires
AU - Oh, Eunsoon
AU - Lee, Byoung Woo
AU - Shim, So Jeong
AU - Choi, Heon Jin
AU - Son, Byoung Hee
AU - Ahn, Yeong Hwan
AU - Dang, Le Si
PY - 2012/4/9
Y1 - 2012/4/9
N2 - Single crystalline GaN nanowires, with 100 nm typical diameters, were grown by chemical vapor deposition method, using Pt catalyst, and characterized by cathodoluminescence and electron beam induced current (EBIC) measurements at 5 K. The near band edge emission was found to be asymmetric and broad, with full width half maximum of around 150 meV, peaking at 3.55 eV, well above the GaN bulk band gap. This blueshift was ascribed to band filling effect resulting from unintentional n-type doping in the range 10 19-10 20cm -3. Despite of this heavy doping, EBIC experiments showed that minority carriers can diffuse over 0.2 μm.
AB - Single crystalline GaN nanowires, with 100 nm typical diameters, were grown by chemical vapor deposition method, using Pt catalyst, and characterized by cathodoluminescence and electron beam induced current (EBIC) measurements at 5 K. The near band edge emission was found to be asymmetric and broad, with full width half maximum of around 150 meV, peaking at 3.55 eV, well above the GaN bulk band gap. This blueshift was ascribed to band filling effect resulting from unintentional n-type doping in the range 10 19-10 20cm -3. Despite of this heavy doping, EBIC experiments showed that minority carriers can diffuse over 0.2 μm.
UR - http://www.scopus.com/inward/record.url?scp=84859798339&partnerID=8YFLogxK
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U2 - 10.1063/1.3702797
DO - 10.1063/1.3702797
M3 - Article
VL - 100
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 15
M1 - 153110
ER -