Low temperature cathodoluminecence and electron beam induced current studies of single GaN nanowires

Eunsoon Oh, Byoung Woo Lee, So Jeong Shim, Heon Jin Choi, Byoung Hee Son, Yeong Hwan Ahn, Le Si Dang

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Single crystalline GaN nanowires, with 100 nm typical diameters, were grown by chemical vapor deposition method, using Pt catalyst, and characterized by cathodoluminescence and electron beam induced current (EBIC) measurements at 5 K. The near band edge emission was found to be asymmetric and broad, with full width half maximum of around 150 meV, peaking at 3.55 eV, well above the GaN bulk band gap. This blueshift was ascribed to band filling effect resulting from unintentional n-type doping in the range 10 19-10 20cm -3. Despite of this heavy doping, EBIC experiments showed that minority carriers can diffuse over 0.2 μm.

Original languageEnglish
Article number153110
JournalApplied Physics Letters
Issue number15
Publication statusPublished - 2012 Apr 9


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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