Low temperature cathodoluminecence and electron beam induced current studies of single GaN nanowires

Eunsoon Oh; Byoung Woo Lee; So Jeong Shim; Heon Jin Choi; Byoung Hee Son; Yeong Hwan Ahn; Le Si Dang

doi:10.1063/1.3702797

Low temperature cathodoluminecence and electron beam induced current studies of single GaN nanowires

Eunsoon Oh, Byoung Woo Lee, So Jeong Shim, Heon Jin Choi, Byoung Hee Son, Yeong Hwan Ahn, Le Si Dang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Single crystalline GaN nanowires, with 100 nm typical diameters, were grown by chemical vapor deposition method, using Pt catalyst, and characterized by cathodoluminescence and electron beam induced current (EBIC) measurements at 5 K. The near band edge emission was found to be asymmetric and broad, with full width half maximum of around 150 meV, peaking at 3.55 eV, well above the GaN bulk band gap. This blueshift was ascribed to band filling effect resulting from unintentional n-type doping in the range 10 ¹⁹-10 ²⁰cm ^-3. Despite of this heavy doping, EBIC experiments showed that minority carriers can diffuse over 0.2 μm.

Original language	English
Article number	153110
Journal	Applied Physics Letters
Volume	100
Issue number	15
DOIs	https://doi.org/10.1063/1.3702797
Publication status	Published - 2012 Apr 9

Bibliographical note

Funding Information:
We thank Mr. Syamanta Goswami for the help of the TEM measurements. This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (Grant No. 2011-0011883). B.H.C. acknowledges the financial support from Korean Science and Engineering Foundation through National Research Laboratory (R0A-2007-000-20075-0).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "Low temperature cathodoluminecence and electron beam induced current studies of single GaN nanowires",

abstract = "Single crystalline GaN nanowires, with 100 nm typical diameters, were grown by chemical vapor deposition method, using Pt catalyst, and characterized by cathodoluminescence and electron beam induced current (EBIC) measurements at 5 K. The near band edge emission was found to be asymmetric and broad, with full width half maximum of around 150 meV, peaking at 3.55 eV, well above the GaN bulk band gap. This blueshift was ascribed to band filling effect resulting from unintentional n-type doping in the range 10 19-10 20cm -3. Despite of this heavy doping, EBIC experiments showed that minority carriers can diffuse over 0.2 μm.",

author = "Eunsoon Oh and Lee, {Byoung Woo} and Shim, {So Jeong} and Choi, {Heon Jin} and Son, {Byoung Hee} and Ahn, {Yeong Hwan} and Dang, {Le Si}",

note = "Funding Information: We thank Mr. Syamanta Goswami for the help of the TEM measurements. This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (Grant No. 2011-0011883). B.H.C. acknowledges the financial support from Korean Science and Engineering Foundation through National Research Laboratory (R0A-2007-000-20075-0).",

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AU - Oh, Eunsoon

AU - Lee, Byoung Woo

AU - Shim, So Jeong

AU - Choi, Heon Jin

AU - Son, Byoung Hee

AU - Ahn, Yeong Hwan

AU - Dang, Le Si

N1 - Funding Information: We thank Mr. Syamanta Goswami for the help of the TEM measurements. This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (Grant No. 2011-0011883). B.H.C. acknowledges the financial support from Korean Science and Engineering Foundation through National Research Laboratory (R0A-2007-000-20075-0).

PY - 2012/4/9

Y1 - 2012/4/9

N2 - Single crystalline GaN nanowires, with 100 nm typical diameters, were grown by chemical vapor deposition method, using Pt catalyst, and characterized by cathodoluminescence and electron beam induced current (EBIC) measurements at 5 K. The near band edge emission was found to be asymmetric and broad, with full width half maximum of around 150 meV, peaking at 3.55 eV, well above the GaN bulk band gap. This blueshift was ascribed to band filling effect resulting from unintentional n-type doping in the range 10 19-10 20cm -3. Despite of this heavy doping, EBIC experiments showed that minority carriers can diffuse over 0.2 μm.

AB - Single crystalline GaN nanowires, with 100 nm typical diameters, were grown by chemical vapor deposition method, using Pt catalyst, and characterized by cathodoluminescence and electron beam induced current (EBIC) measurements at 5 K. The near band edge emission was found to be asymmetric and broad, with full width half maximum of around 150 meV, peaking at 3.55 eV, well above the GaN bulk band gap. This blueshift was ascribed to band filling effect resulting from unintentional n-type doping in the range 10 19-10 20cm -3. Despite of this heavy doping, EBIC experiments showed that minority carriers can diffuse over 0.2 μm.

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Low temperature cathodoluminecence and electron beam induced current studies of single GaN nanowires

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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