Single crystalline GaN nanowires, with 100 nm typical diameters, were grown by chemical vapor deposition method, using Pt catalyst, and characterized by cathodoluminescence and electron beam induced current (EBIC) measurements at 5 K. The near band edge emission was found to be asymmetric and broad, with full width half maximum of around 150 meV, peaking at 3.55 eV, well above the GaN bulk band gap. This blueshift was ascribed to band filling effect resulting from unintentional n-type doping in the range 10 19-10 20cm -3. Despite of this heavy doping, EBIC experiments showed that minority carriers can diffuse over 0.2 μm.
Bibliographical noteFunding Information:
We thank Mr. Syamanta Goswami for the help of the TEM measurements. This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (Grant No. 2011-0011883). B.H.C. acknowledges the financial support from Korean Science and Engineering Foundation through National Research Laboratory (R0A-2007-000-20075-0).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)