This paper dealt with the electrical properties of Ga:ZnO film deposited via pulsed laser deposition and the mechanisms responsible for conduction and scattering behavior in terms of temperature. Such film having a degenerate band exhibited the metallic characteristics except those observed below 100 and 60 K for films fabricated at 298 and 773 K, respectively. This metal semiconductor transition (MST) was explained based on weakly localized electrons found in disorder conductor. It was found that the predominant scattering mechanism was ionized-impurity scattering below MST region, while lattice vibration and grain boundary scattering were important in the regime above MST temperature.
Bibliographical noteFunding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) [No. R0A-2007-000-10044-0(2007)] and was also partly supported by Korea Research Foundation (KRF-2007–357–D00136)
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)