Low temperature conduction and scattering behavior of Ga-doped ZnO

Byung Du Ahn, Sang Hoon Oh, Hyun Jae Kim, Myung Hwa Jung, Young Gun Ko

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

This paper dealt with the electrical properties of Ga:ZnO film deposited via pulsed laser deposition and the mechanisms responsible for conduction and scattering behavior in terms of temperature. Such film having a degenerate band exhibited the metallic characteristics except those observed below 100 and 60 K for films fabricated at 298 and 773 K, respectively. This metal semiconductor transition (MST) was explained based on weakly localized electrons found in disorder conductor. It was found that the predominant scattering mechanism was ionized-impurity scattering below MST region, while lattice vibration and grain boundary scattering were important in the regime above MST temperature.

Original languageEnglish
Article number252109
JournalApplied Physics Letters
Volume91
Issue number25
DOIs
Publication statusPublished - 2007 Dec 1

Fingerprint

conduction
scattering
metals
lattice vibrations
pulsed laser deposition
grain boundaries
conductors
transition temperature
electrical properties
disorders
impurities
electrons
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Ahn, Byung Du ; Oh, Sang Hoon ; Kim, Hyun Jae ; Jung, Myung Hwa ; Ko, Young Gun. / Low temperature conduction and scattering behavior of Ga-doped ZnO. In: Applied Physics Letters. 2007 ; Vol. 91, No. 25.
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Low temperature conduction and scattering behavior of Ga-doped ZnO. / Ahn, Byung Du; Oh, Sang Hoon; Kim, Hyun Jae; Jung, Myung Hwa; Ko, Young Gun.

In: Applied Physics Letters, Vol. 91, No. 25, 252109, 01.12.2007.

Research output: Contribution to journalArticle

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