Low-temperature direct synthesis of high quality WS 2 thin films by plasma-enhanced atomic layer deposition for energy related applications

Seungmin Yeo, Dip K. Nandi, R. Rahul, Tae Hyun Kim, Bonggeun Shong, Yujin Jang, Jong Seong Bae, Jeong Woo Han, Soo Hyun Kim, Hyungjun Kim

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Tungsten disulfide (WS 2 ) thin films are grown on several types of substrates by plasma-enhanced atomic layer deposition (PEALD) technique using tungsten hexacarbonyl [W(CO) 6 ] and H 2 S plasma at a relatively low temperature of 350 °C. The method delivers polycrystalline WS 2 film with (0 0 2) preferential growth and the high quality films could be successfully grown with as low as 30 ALD cycles (corresponding to ∼3 nm of thickness). Density functional theory (DFT) calculation results reveal that both adsorption of W(CO) 6 and removal of CO ligand would be facilitated by usage of H 2 S plasma by generating the different defect sites on the basal plane. The typical self-limiting film growth (growth rate of ∼0.1 nm/cycle), characteristic of ideal ALD, is clearly observed with both the precursor and reactant pulsing time. X-ray diffractometry (XRD), Raman spectroscopy, transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and Rutherford backscattering spectrometry (RBS) are performed in details to study the as-grown WS 2 film on Si/SiO 2 substrate. The analysis results confirm the formation of polycrystalline film, with high purity and well-defined stoichiometry. The as-deposited WS 2 films are then explored as an electrode in the field of energy generation as well as energy storage. The films are uniformly and conformally grown on high surface-area 3 dimensional Ni-foam that show excellent activity towards hydrogen evolution reaction (HER). Significantly low overpotential of ∼280 mV is observed at a high operational current density of 100 mA cm −2 during HER in acid electrolyte. In addition, the as-grown films on stainless steel substrate also reveal the stable electrochemical performances in Na-ion battery as an anode with reasonably high areal capacity of ∼44.5 μAh cm −2 at the end of 50 charge-discharge cycles.

Original languageEnglish
Pages (from-to)596-605
Number of pages10
JournalApplied Surface Science
Volume459
DOIs
Publication statusPublished - 2018 Nov 30

Fingerprint

Atomic layer deposition
Plasmas
Thin films
Temperature
Tungsten
Hydrogen
Substrates
Stainless Steel
Rutherford backscattering spectroscopy
Film growth
Carbon Monoxide
Stoichiometry
Disulfides
Energy storage
X ray diffraction analysis
Spectrometry
Electrolytes
Density functional theory
Raman spectroscopy
Foams

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

Yeo, Seungmin ; Nandi, Dip K. ; Rahul, R. ; Kim, Tae Hyun ; Shong, Bonggeun ; Jang, Yujin ; Bae, Jong Seong ; Han, Jeong Woo ; Kim, Soo Hyun ; Kim, Hyungjun. / Low-temperature direct synthesis of high quality WS 2 thin films by plasma-enhanced atomic layer deposition for energy related applications In: Applied Surface Science. 2018 ; Vol. 459. pp. 596-605.
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abstract = "Tungsten disulfide (WS 2 ) thin films are grown on several types of substrates by plasma-enhanced atomic layer deposition (PEALD) technique using tungsten hexacarbonyl [W(CO) 6 ] and H 2 S plasma at a relatively low temperature of 350 °C. The method delivers polycrystalline WS 2 film with (0 0 2) preferential growth and the high quality films could be successfully grown with as low as 30 ALD cycles (corresponding to ∼3 nm of thickness). Density functional theory (DFT) calculation results reveal that both adsorption of W(CO) 6 and removal of CO ligand would be facilitated by usage of H 2 S plasma by generating the different defect sites on the basal plane. The typical self-limiting film growth (growth rate of ∼0.1 nm/cycle), characteristic of ideal ALD, is clearly observed with both the precursor and reactant pulsing time. X-ray diffractometry (XRD), Raman spectroscopy, transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and Rutherford backscattering spectrometry (RBS) are performed in details to study the as-grown WS 2 film on Si/SiO 2 substrate. The analysis results confirm the formation of polycrystalline film, with high purity and well-defined stoichiometry. The as-deposited WS 2 films are then explored as an electrode in the field of energy generation as well as energy storage. The films are uniformly and conformally grown on high surface-area 3 dimensional Ni-foam that show excellent activity towards hydrogen evolution reaction (HER). Significantly low overpotential of ∼280 mV is observed at a high operational current density of 100 mA cm −2 during HER in acid electrolyte. In addition, the as-grown films on stainless steel substrate also reveal the stable electrochemical performances in Na-ion battery as an anode with reasonably high areal capacity of ∼44.5 μAh cm −2 at the end of 50 charge-discharge cycles.",
author = "Seungmin Yeo and Nandi, {Dip K.} and R. Rahul and Kim, {Tae Hyun} and Bonggeun Shong and Yujin Jang and Bae, {Jong Seong} and Han, {Jeong Woo} and Kim, {Soo Hyun} and Hyungjun Kim",
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Low-temperature direct synthesis of high quality WS 2 thin films by plasma-enhanced atomic layer deposition for energy related applications . / Yeo, Seungmin; Nandi, Dip K.; Rahul, R.; Kim, Tae Hyun; Shong, Bonggeun; Jang, Yujin; Bae, Jong Seong; Han, Jeong Woo; Kim, Soo Hyun; Kim, Hyungjun.

In: Applied Surface Science, Vol. 459, 30.11.2018, p. 596-605.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Low-temperature direct synthesis of high quality WS 2 thin films by plasma-enhanced atomic layer deposition for energy related applications

AU - Yeo, Seungmin

AU - Nandi, Dip K.

AU - Rahul, R.

AU - Kim, Tae Hyun

AU - Shong, Bonggeun

AU - Jang, Yujin

AU - Bae, Jong Seong

AU - Han, Jeong Woo

AU - Kim, Soo Hyun

AU - Kim, Hyungjun

PY - 2018/11/30

Y1 - 2018/11/30

N2 - Tungsten disulfide (WS 2 ) thin films are grown on several types of substrates by plasma-enhanced atomic layer deposition (PEALD) technique using tungsten hexacarbonyl [W(CO) 6 ] and H 2 S plasma at a relatively low temperature of 350 °C. The method delivers polycrystalline WS 2 film with (0 0 2) preferential growth and the high quality films could be successfully grown with as low as 30 ALD cycles (corresponding to ∼3 nm of thickness). Density functional theory (DFT) calculation results reveal that both adsorption of W(CO) 6 and removal of CO ligand would be facilitated by usage of H 2 S plasma by generating the different defect sites on the basal plane. The typical self-limiting film growth (growth rate of ∼0.1 nm/cycle), characteristic of ideal ALD, is clearly observed with both the precursor and reactant pulsing time. X-ray diffractometry (XRD), Raman spectroscopy, transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and Rutherford backscattering spectrometry (RBS) are performed in details to study the as-grown WS 2 film on Si/SiO 2 substrate. The analysis results confirm the formation of polycrystalline film, with high purity and well-defined stoichiometry. The as-deposited WS 2 films are then explored as an electrode in the field of energy generation as well as energy storage. The films are uniformly and conformally grown on high surface-area 3 dimensional Ni-foam that show excellent activity towards hydrogen evolution reaction (HER). Significantly low overpotential of ∼280 mV is observed at a high operational current density of 100 mA cm −2 during HER in acid electrolyte. In addition, the as-grown films on stainless steel substrate also reveal the stable electrochemical performances in Na-ion battery as an anode with reasonably high areal capacity of ∼44.5 μAh cm −2 at the end of 50 charge-discharge cycles.

AB - Tungsten disulfide (WS 2 ) thin films are grown on several types of substrates by plasma-enhanced atomic layer deposition (PEALD) technique using tungsten hexacarbonyl [W(CO) 6 ] and H 2 S plasma at a relatively low temperature of 350 °C. The method delivers polycrystalline WS 2 film with (0 0 2) preferential growth and the high quality films could be successfully grown with as low as 30 ALD cycles (corresponding to ∼3 nm of thickness). Density functional theory (DFT) calculation results reveal that both adsorption of W(CO) 6 and removal of CO ligand would be facilitated by usage of H 2 S plasma by generating the different defect sites on the basal plane. The typical self-limiting film growth (growth rate of ∼0.1 nm/cycle), characteristic of ideal ALD, is clearly observed with both the precursor and reactant pulsing time. X-ray diffractometry (XRD), Raman spectroscopy, transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and Rutherford backscattering spectrometry (RBS) are performed in details to study the as-grown WS 2 film on Si/SiO 2 substrate. The analysis results confirm the formation of polycrystalline film, with high purity and well-defined stoichiometry. The as-deposited WS 2 films are then explored as an electrode in the field of energy generation as well as energy storage. The films are uniformly and conformally grown on high surface-area 3 dimensional Ni-foam that show excellent activity towards hydrogen evolution reaction (HER). Significantly low overpotential of ∼280 mV is observed at a high operational current density of 100 mA cm −2 during HER in acid electrolyte. In addition, the as-grown films on stainless steel substrate also reveal the stable electrochemical performances in Na-ion battery as an anode with reasonably high areal capacity of ∼44.5 μAh cm −2 at the end of 50 charge-discharge cycles.

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