Low temperature epitaxial growth of Si0.5Ge0.5 alloy layer on Si (100) by ion beam assisted deposition

S. W. Park, J. Y. Shim, Hong Koo Baik

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The first results were reported on low temperature epitaxial growth of Si0.5Ge0.5 alloy layer on Si (100) by ion beam assisted deposition. Nucleation and the growth of Si0.5Ge0.5 alloy layer had been investigated by atomic force microscopy and reflection high energy electron diffraction analysis. The Si0.5Ge0.5 alloy layer nucleated on Si (100) via Stranski-Krastanov (SK) mode. The Ar ion bombard-ment improved crystallinity and prolonged layer-by-layer stage of the SK mode. The epitaxial temperature was 200°C lower than 550-600°C in molecular beam epitaxy. In order to explain the mechanism of low temperature epitaxial growth EAr (energy transferred to growing film by bombarding Ar ion, eV/atom) value was experimentally calculated. In conclusion, the ion bombardment induced dissociation of three-dimensional islands and enhanced the surface diffusion. The variation of tetragonal strain and its effect on electron mobility were taken into consideration. Electron mobility increased with tetragonal strain as a result of band split.

Original languageEnglish
Pages (from-to)1399-1406
Number of pages8
JournalJournal of Electronic Materials
Volume24
Issue number10
DOIs
Publication statusPublished - 1995 Oct 1

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Ion beam assisted deposition
Epitaxial growth
Electron mobility
ion beams
Ions
Reflection high energy electron diffraction
electron mobility
Surface diffusion
Film growth
Ion bombardment
Molecular beam epitaxy
Temperature
Atomic force microscopy
Nucleation
ions
Atoms
surface diffusion
high energy electrons
bombardment
crystallinity

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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title = "Low temperature epitaxial growth of Si0.5Ge0.5 alloy layer on Si (100) by ion beam assisted deposition",
abstract = "The first results were reported on low temperature epitaxial growth of Si0.5Ge0.5 alloy layer on Si (100) by ion beam assisted deposition. Nucleation and the growth of Si0.5Ge0.5 alloy layer had been investigated by atomic force microscopy and reflection high energy electron diffraction analysis. The Si0.5Ge0.5 alloy layer nucleated on Si (100) via Stranski-Krastanov (SK) mode. The Ar ion bombard-ment improved crystallinity and prolonged layer-by-layer stage of the SK mode. The epitaxial temperature was 200°C lower than 550-600°C in molecular beam epitaxy. In order to explain the mechanism of low temperature epitaxial growth EAr (energy transferred to growing film by bombarding Ar ion, eV/atom) value was experimentally calculated. In conclusion, the ion bombardment induced dissociation of three-dimensional islands and enhanced the surface diffusion. The variation of tetragonal strain and its effect on electron mobility were taken into consideration. Electron mobility increased with tetragonal strain as a result of band split.",
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Low temperature epitaxial growth of Si0.5Ge0.5 alloy layer on Si (100) by ion beam assisted deposition. / Park, S. W.; Shim, J. Y.; Baik, Hong Koo.

In: Journal of Electronic Materials, Vol. 24, No. 10, 01.10.1995, p. 1399-1406.

Research output: Contribution to journalArticle

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