Low temperature epitaxial growth of Si_0.5Ge_0.5 alloy layer on Si (100) by ion beam assisted deposition

Physics

• Strain 100%
• Ion 33%
• Electron Mobility 33%
• Nucleation 33%
• Molecular Beam Epitaxy 16%
• Dissociation 16%
• Atomic Force Microscopy 16%
• Crystallinity 16%
• Growth 16%
• Temperature 16%
• Value 16%
• Variations 16%
• Atoms 16%
• Atolls 16%

Engineering

• Alloy Layer 66%
• Lower Temperature 50%
• Ion Implantation 33%
• Crystallinity 16%
• Growing Film 16%
• Temperature 16%
• Energy Engineering 16%
• Stages 16%
• Mechanisms 16%

Material Science

• Epitaxy 50%
• Ion Beam Assisted Deposition 33%
• Electron Mobility 33%
• Surface Diffusion 33%
• Reflection High-Energy Electron Diffraction 16%