Low-temperature fabrication of an HfO2 passivation layer for amorphous indiu-gallium-zinc oxide thin film transistors using a solution process

Seonghwan Hong; Sung Pyo Park; Yeong Gyu Kim; Byung Ha Kang; Jae Won Na; Heon Je Kim

Low-temperature fabrication of an HfO2 passivation layer for amorphous indiu-gallium-zinc oxide thin film transistors using a solution process

Seonghwan Hong, Sung Pyo Park, Yeong Gyu Kim, Byung Ha Kang, Jae Won Na, Heon Je Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	Scientific Reports
Publication status	Accepted/In press - 2017 Nov

Cite this

@article{425b0fc6bca0430080faf78a4a1a0766,

title = "Low-temperature fabrication of an HfO2 passivation layer for amorphous indiu-gallium-zinc oxide thin film transistors using a solution process",

author = "Seonghwan Hong and Park, {Sung Pyo} and Kim, {Yeong Gyu} and Kang, {Byung Ha} and Na, {Jae Won} and Kim, {Heon Je}",

year = "2017",

month = nov,

language = "English",

journal = "Scientific Reports",

issn = "2045-2322",

publisher = "Nature Publishing Group",

}

TY - JOUR

T1 - Low-temperature fabrication of an HfO2 passivation layer for amorphous indiu-gallium-zinc oxide thin film transistors using a solution process

AU - Hong, Seonghwan

AU - Park, Sung Pyo

AU - Kim, Yeong Gyu

AU - Kang, Byung Ha

AU - Na, Jae Won

AU - Kim, Heon Je

PY - 2017/11

Y1 - 2017/11

M3 - Article

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

ER -