Low-temperature fabrication of an HfO2 passivation layer for amorphous indiu-gallium-zinc oxide thin film transistors using a solution process

Seonghwan Hong, Sung Pyo Park, Yeong Gyu Kim, Byung Ha Kang, Jae Won Na, Heon Je Kim

Research output: Contribution to journalArticle

Original languageEnglish
JournalScientific Reports
Publication statusAccepted/In press - 2017 Nov

Cite this

@article{425b0fc6bca0430080faf78a4a1a0766,
title = "Low-temperature fabrication of an HfO2 passivation layer for amorphous indiu-gallium-zinc oxide thin film transistors using a solution process",
author = "Seonghwan Hong and Park, {Sung Pyo} and Kim, {Yeong Gyu} and Kang, {Byung Ha} and Na, {Jae Won} and Kim, {Heon Je}",
year = "2017",
month = "11",
language = "English",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",

}

Low-temperature fabrication of an HfO2 passivation layer for amorphous indiu-gallium-zinc oxide thin film transistors using a solution process. / Hong, Seonghwan; Park, Sung Pyo; Kim, Yeong Gyu; Kang, Byung Ha; Na, Jae Won; Kim, Heon Je.

In: Scientific Reports, 11.2017.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Low-temperature fabrication of an HfO2 passivation layer for amorphous indiu-gallium-zinc oxide thin film transistors using a solution process

AU - Hong, Seonghwan

AU - Park, Sung Pyo

AU - Kim, Yeong Gyu

AU - Kang, Byung Ha

AU - Na, Jae Won

AU - Kim, Heon Je

PY - 2017/11

Y1 - 2017/11

M3 - Article

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

ER -