Low-temperature fabrication of an HfO2 passivation layer for amorphous indiu-gallium-zinc oxide thin film transistors using a solution process

Seonghwan Hong; Sung Pyo Park; Yeong Gyu Kim; Byung Ha Kang; Jae Won Na; Heon Je Kim

Low-temperature fabrication of an HfO2 passivation layer for amorphous indiu-gallium-zinc oxide thin film transistors using a solution process

Seonghwan Hong, Sung Pyo Park, Yeong Gyu Kim, Byung Ha Kang, Jae Won Na, Heon Je Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article

Original language	English
Journal	Scientific Reports
Publication status	Accepted/In press - 2017 Nov

Cite this

Hong, S., Park, S. P., Kim, Y. G., Kang, B. H., Na, J. W., & Kim, H. J. (Accepted/In press). Low-temperature fabrication of an HfO2 passivation layer for amorphous indiu-gallium-zinc oxide thin film transistors using a solution process. Scientific Reports.

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title = "Low-temperature fabrication of an HfO2 passivation layer for amorphous indiu-gallium-zinc oxide thin film transistors using a solution process",

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AU - Park, Sung Pyo

AU - Kim, Yeong Gyu

AU - Kang, Byung Ha

AU - Na, Jae Won

AU - Kim, Heon Je

PY - 2017/11

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