| Original language | English |
|---|---|
| Journal | Scientific Reports |
| Publication status | Accepted/In press - 2017 Nov |
Cite this
Hong, S., Park, S. P., Kim, Y. G., Kang, B. H., Na, J. W., & Kim, H. J. (Accepted/In press). Low-temperature fabrication of an HfO2 passivation layer for amorphous indiu-gallium-zinc oxide thin film transistors using a solution process. Scientific Reports.
@article{425b0fc6bca0430080faf78a4a1a0766,
title = "Low-temperature fabrication of an HfO2 passivation layer for amorphous indiu-gallium-zinc oxide thin film transistors using a solution process",
author = "Seonghwan Hong and Park, {Sung Pyo} and Kim, {Yeong Gyu} and Kang, {Byung Ha} and Na, {Jae Won} and Kim, {Heon Je}",
year = "2017",
month = "11",
language = "English",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",
}
Hong, S, Park, SP, Kim, YG, Kang, BH, Na, JW & Kim, HJ 2017, 'Low-temperature fabrication of an HfO2 passivation layer for amorphous indiu-gallium-zinc oxide thin film transistors using a solution process', Scientific Reports.
Low-temperature fabrication of an HfO2 passivation layer for amorphous indiu-gallium-zinc oxide thin film transistors using a solution process. / Hong, Seonghwan; Park, Sung Pyo; Kim, Yeong Gyu; Kang, Byung Ha; Na, Jae Won; Kim, Heon Je.
In: Scientific Reports, 11.2017.Research output: Contribution to journal › Article
TY - JOUR
T1 - Low-temperature fabrication of an HfO2 passivation layer for amorphous indiu-gallium-zinc oxide thin film transistors using a solution process
AU - Hong, Seonghwan
AU - Park, Sung Pyo
AU - Kim, Yeong Gyu
AU - Kang, Byung Ha
AU - Na, Jae Won
AU - Kim, Heon Je
PY - 2017/11
Y1 - 2017/11
M3 - Article
JO - Scientific Reports
JF - Scientific Reports
SN - 2045-2322
ER -
Hong S, Park SP, Kim YG, Kang BH, Na JW, Kim HJ. Low-temperature fabrication of an HfO2 passivation layer for amorphous indiu-gallium-zinc oxide thin film transistors using a solution process. Scientific Reports. 2017 Nov.