Low-temperature fabrication of an HfO2 passivation layer for amorphous indium-gallium-zinc oxide thin film transistors using a solution process

Seonghwan Hong, Sung Pyo Park, Yeong Gyu Kim, Byung Ha Kang, Jae Won Na, Hyun Jae Kim

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We report low-temperature solution processing of hafnium oxide (HfO2) passivation layers for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). At 150 °C, the hafnium chloride (HfCl4) precursor readily hydrolyzed in deionized (DI) water and transformed into an HfO2 film. The fabricated HfO2 passivation layer prevented any interaction between the back surface of an a-IGZO TFT and ambient gas. Moreover, diffused Hf4+ in the back-channel layer of the a-IGZO TFT reduced the oxygen vacancy, which is the origin of the electrical instability in a-IGZO TFTs. Consequently, the a-IGZO TFT with the HfO2 passivation layer exhibited improved stability, showing a decrease in the threshold voltage shift from 4.83 to 1.68 V under a positive bias stress test conducted over 10,000 s.

Original languageEnglish
Article number16265
JournalScientific reports
Volume7
Issue number1
DOIs
Publication statusPublished - 2017 Dec 1

Fingerprint

gallium oxides
zinc oxides
passivity
indium
transistors
fabrication
thin films
hafnium oxides
hafnium
threshold voltage
chlorides
shift
oxygen
gases
water
interactions

All Science Journal Classification (ASJC) codes

  • General

Cite this

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title = "Low-temperature fabrication of an HfO2 passivation layer for amorphous indium-gallium-zinc oxide thin film transistors using a solution process",
abstract = "We report low-temperature solution processing of hafnium oxide (HfO2) passivation layers for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). At 150 °C, the hafnium chloride (HfCl4) precursor readily hydrolyzed in deionized (DI) water and transformed into an HfO2 film. The fabricated HfO2 passivation layer prevented any interaction between the back surface of an a-IGZO TFT and ambient gas. Moreover, diffused Hf4+ in the back-channel layer of the a-IGZO TFT reduced the oxygen vacancy, which is the origin of the electrical instability in a-IGZO TFTs. Consequently, the a-IGZO TFT with the HfO2 passivation layer exhibited improved stability, showing a decrease in the threshold voltage shift from 4.83 to 1.68 V under a positive bias stress test conducted over 10,000 s.",
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Low-temperature fabrication of an HfO2 passivation layer for amorphous indium-gallium-zinc oxide thin film transistors using a solution process. / Hong, Seonghwan; Park, Sung Pyo; Kim, Yeong Gyu; Kang, Byung Ha; Na, Jae Won; Kim, Hyun Jae.

In: Scientific reports, Vol. 7, No. 1, 16265, 01.12.2017.

Research output: Contribution to journalArticle

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AU - Hong, Seonghwan

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AU - Kang, Byung Ha

AU - Na, Jae Won

AU - Kim, Hyun Jae

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