Low-temperature fabrication of an HfO2 passivation layer for amorphous indium-gallium-zinc oxide thin film transistors using a solution process

Seonghwan Hong; Sung Pyo Park; Yeong Gyu Kim; Byung Ha Kang; Jae Won Na; Hyun Jae Kim

doi:10.1038/s41598-017-16585-x

Low-temperature fabrication of an HfO2 passivation layer for amorphous indium-gallium-zinc oxide thin film transistors using a solution process

Seonghwan Hong, Sung Pyo Park, Yeong Gyu Kim, Byung Ha Kang, Jae Won Na, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

We report low-temperature solution processing of hafnium oxide (HfO2) passivation layers for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). At 150 °C, the hafnium chloride (HfCl4) precursor readily hydrolyzed in deionized (DI) water and transformed into an HfO2 film. The fabricated HfO2 passivation layer prevented any interaction between the back surface of an a-IGZO TFT and ambient gas. Moreover, diffused Hf⁴⁺ in the back-channel layer of the a-IGZO TFT reduced the oxygen vacancy, which is the origin of the electrical instability in a-IGZO TFTs. Consequently, the a-IGZO TFT with the HfO2 passivation layer exhibited improved stability, showing a decrease in the threshold voltage shift from 4.83 to 1.68 V under a positive bias stress test conducted over 10,000 s.

Original language	English
Article number	16265
Journal	Scientific reports
Volume	7
Issue number	1
DOIs	https://doi.org/10.1038/s41598-017-16585-x
Publication status	Published - 2017 Dec 1

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2017R1A2B3008719).

Publisher Copyright:
© 2017 The Author(s).

All Science Journal Classification (ASJC) codes

General

Access to Document

10.1038/s41598-017-16585-x

Cite this

@article{8a6d5e34bdaf4f02a31d2ff6db7bd6e7,

title = "Low-temperature fabrication of an HfO2 passivation layer for amorphous indium-gallium-zinc oxide thin film transistors using a solution process",

abstract = "We report low-temperature solution processing of hafnium oxide (HfO2) passivation layers for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). At 150 °C, the hafnium chloride (HfCl4) precursor readily hydrolyzed in deionized (DI) water and transformed into an HfO2 film. The fabricated HfO2 passivation layer prevented any interaction between the back surface of an a-IGZO TFT and ambient gas. Moreover, diffused Hf4+ in the back-channel layer of the a-IGZO TFT reduced the oxygen vacancy, which is the origin of the electrical instability in a-IGZO TFTs. Consequently, the a-IGZO TFT with the HfO2 passivation layer exhibited improved stability, showing a decrease in the threshold voltage shift from 4.83 to 1.68 V under a positive bias stress test conducted over 10,000 s.",

author = "Seonghwan Hong and Park, {Sung Pyo} and Kim, {Yeong Gyu} and Kang, {Byung Ha} and Na, {Jae Won} and Kim, {Hyun Jae}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2017R1A2B3008719). Publisher Copyright: {\textcopyright} 2017 The Author(s).",

year = "2017",

month = dec,

day = "1",

doi = "10.1038/s41598-017-16585-x",

language = "English",

volume = "7",

journal = "Scientific Reports",

issn = "2045-2322",

publisher = "Nature Publishing Group",

number = "1",

}

TY - JOUR

T1 - Low-temperature fabrication of an HfO2 passivation layer for amorphous indium-gallium-zinc oxide thin film transistors using a solution process

AU - Hong, Seonghwan

AU - Park, Sung Pyo

AU - Kim, Yeong Gyu

AU - Kang, Byung Ha

AU - Na, Jae Won

AU - Kim, Hyun Jae

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2017R1A2B3008719). Publisher Copyright: © 2017 The Author(s).

PY - 2017/12/1

Y1 - 2017/12/1

N2 - We report low-temperature solution processing of hafnium oxide (HfO2) passivation layers for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). At 150 °C, the hafnium chloride (HfCl4) precursor readily hydrolyzed in deionized (DI) water and transformed into an HfO2 film. The fabricated HfO2 passivation layer prevented any interaction between the back surface of an a-IGZO TFT and ambient gas. Moreover, diffused Hf4+ in the back-channel layer of the a-IGZO TFT reduced the oxygen vacancy, which is the origin of the electrical instability in a-IGZO TFTs. Consequently, the a-IGZO TFT with the HfO2 passivation layer exhibited improved stability, showing a decrease in the threshold voltage shift from 4.83 to 1.68 V under a positive bias stress test conducted over 10,000 s.

AB - We report low-temperature solution processing of hafnium oxide (HfO2) passivation layers for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). At 150 °C, the hafnium chloride (HfCl4) precursor readily hydrolyzed in deionized (DI) water and transformed into an HfO2 film. The fabricated HfO2 passivation layer prevented any interaction between the back surface of an a-IGZO TFT and ambient gas. Moreover, diffused Hf4+ in the back-channel layer of the a-IGZO TFT reduced the oxygen vacancy, which is the origin of the electrical instability in a-IGZO TFTs. Consequently, the a-IGZO TFT with the HfO2 passivation layer exhibited improved stability, showing a decrease in the threshold voltage shift from 4.83 to 1.68 V under a positive bias stress test conducted over 10,000 s.

UR - http://www.scopus.com/inward/record.url?scp=85035002688&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85035002688&partnerID=8YFLogxK

U2 - 10.1038/s41598-017-16585-x

DO - 10.1038/s41598-017-16585-x

M3 - Article

C2 - 29176568

AN - SCOPUS:85035002688

SN - 2045-2322

VL - 7

JO - Scientific Reports

JF - Scientific Reports

IS - 1

M1 - 16265

ER -

Low-temperature fabrication of an HfO2 passivation layer for amorphous indium-gallium-zinc oxide thin film transistors using a solution process

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this