Low temperature fabrication of metal oxide thin film transistors formed by a heated aqueous precursor solution

Keun Ho Lee, Sun Woong Han, Jee Ho Park, Young Bum Yoo, Se Jong Lee, Hong Koo Baik, Kie Moon Song

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5 Citations (Scopus)


We introduce an easy process for the fabrication of solution-processed indium oxide (InO) thin film transistors (TFTs) by heating a precursor solution. InO TFTs fabricated from solutions of an InO precursor heated at 90 °C had the highest mobility of 4.61cm2V-1 s-1 after being annealed at 200 °C. When the InO precursor solution is heated, HNO3 may be thermally evaporated in the InO precursor solution. Nitrogen atoms can disrupt hydrolysis and condensation reactions. An InO thin film deposited from a solution of the heated InO precursor is advantageous for hydrolysis and condensation reactions due to the absence of nitrogen atoms.

Original languageEnglish
Article number010304
JournalJapanese Journal of Applied Physics
Issue number1
Publication statusPublished - 2016 Jan


All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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