Low temperature grown polycrystalline La 0.7 Sr 0.3 Mn O 3 thin films on amorphous Si O 2 substrates by rf magnetron sputtering

Sun Gyu Choi, A. Sivasankar Reddy, Hyung-Ho Park, Woo Seok Yang, Hojun Ryu, Byoung Gon Yu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The La 0.7 Sr 0.3 Mn O 3 thin films have been prepared on amorphous Si O 2 substrates by a rf magnetron sputtering technique under various oxygen flow rates and rf powers at a relatively low substrate temperature of 350 °C. The effects of oxygen flow rate and rf power on their physical properties were systematically investigated. X-ray diffraction results show that the growth orientation and crystallinity of the films were affected by rf power and oxygen flow rate. The electrical resistivity of the films was reduced with increasing oxygen flow rate and rf power due to enhanced {100} growth plane orientation and enlarged grain size of the films. In addition, a relatively high temperature coefficient of resistance value of -2.4% was obtained in the present investigation even with low deposition temperature.

Original languageEnglish
Pages (from-to)595-600
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume27
Issue number4
DOIs
Publication statusPublished - 2009 Jul 17

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Magnetron sputtering
magnetron sputtering
flow velocity
Flow rate
Oxygen
Thin films
oxygen
Substrates
thin films
Temperature
crystallinity
Physical properties
physical properties
grain size
X ray diffraction
electrical resistivity
temperature
coefficients
diffraction
x rays

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

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title = "Low temperature grown polycrystalline La 0.7 Sr 0.3 Mn O 3 thin films on amorphous Si O 2 substrates by rf magnetron sputtering",
abstract = "The La 0.7 Sr 0.3 Mn O 3 thin films have been prepared on amorphous Si O 2 substrates by a rf magnetron sputtering technique under various oxygen flow rates and rf powers at a relatively low substrate temperature of 350 °C. The effects of oxygen flow rate and rf power on their physical properties were systematically investigated. X-ray diffraction results show that the growth orientation and crystallinity of the films were affected by rf power and oxygen flow rate. The electrical resistivity of the films was reduced with increasing oxygen flow rate and rf power due to enhanced {100} growth plane orientation and enlarged grain size of the films. In addition, a relatively high temperature coefficient of resistance value of -2.4{\%} was obtained in the present investigation even with low deposition temperature.",
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Low temperature grown polycrystalline La 0.7 Sr 0.3 Mn O 3 thin films on amorphous Si O 2 substrates by rf magnetron sputtering . / Choi, Sun Gyu; Sivasankar Reddy, A.; Park, Hyung-Ho; Yang, Woo Seok; Ryu, Hojun; Yu, Byoung Gon.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 27, No. 4, 17.07.2009, p. 595-600.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Low temperature grown polycrystalline La 0.7 Sr 0.3 Mn O 3 thin films on amorphous Si O 2 substrates by rf magnetron sputtering

AU - Choi, Sun Gyu

AU - Sivasankar Reddy, A.

AU - Park, Hyung-Ho

AU - Yang, Woo Seok

AU - Ryu, Hojun

AU - Yu, Byoung Gon

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AB - The La 0.7 Sr 0.3 Mn O 3 thin films have been prepared on amorphous Si O 2 substrates by a rf magnetron sputtering technique under various oxygen flow rates and rf powers at a relatively low substrate temperature of 350 °C. The effects of oxygen flow rate and rf power on their physical properties were systematically investigated. X-ray diffraction results show that the growth orientation and crystallinity of the films were affected by rf power and oxygen flow rate. The electrical resistivity of the films was reduced with increasing oxygen flow rate and rf power due to enhanced {100} growth plane orientation and enlarged grain size of the films. In addition, a relatively high temperature coefficient of resistance value of -2.4% was obtained in the present investigation even with low deposition temperature.

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