Low-temperature, high-growth-rate ALD of SiO2 using aminodisilane precursor

Taewook Nam, Hyunho Lee, Taejin Choi, Seunggi Seo, Chang Mo Yoon, Yunjung Choi, Heonjong Jeong, Hima K. Lingam, Venkateswara R. Chitturi, Andrey Korolev, Jong Hyun Ahn, Hyungjun Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In the present study, SiO2 was deposited using the atomic layer deposition (ALD) with a 1,2-bis(diisopropylamino)disilane (BDIPADS) precursor. The use of this precursor exhibited a higher growth rate and lower initial growth temperature than the use of diisopropylaminosilane (DIPAS) did. The ALD reaction using BDIPADS produced SiO2 with excellent quality owing to the self-catalytic reaction between the amine ligand and O3; therefore, the SiO2 film has no impurities. When the growth temperature was increased gradually, the stoichiometry and density of SiO2 were improved also because the reaction between surface adsorbate species was nearly complete. ALD SiO2 exhibited a higher dielectric constant than the bulk SiO2 did, from the metal-oxide-semiconductor capacitor, because of the incorporated hydroxyl groups in the film. Furthermore, the etching characteristics were modulated by changing the growth temperature to ensure that the film can be used as a hard mask for lithography. From the DFT calculation, high reaction energy between the BDIPADS and Si–OH was observed. Moreover, the Si–Si cleavage results in the existence additional reaction sites, such as amine group, allowing low-temperature growth and enhanced productivity. Therefore, the number of Si atoms in a molecule affects the growth rate and initial growth temperature to ensure that BDIPADS is a highly excellent precursor for the SiO2 deposition; therefore, its use can lead to a remarkably high productivity.

Original languageEnglish
Pages (from-to)381-390
Number of pages10
JournalApplied Surface Science
Volume485
DOIs
Publication statusPublished - 2019 Aug 15

Fingerprint

Atomic layer deposition
Growth temperature
atomic layer epitaxy
Amines
Temperature
Productivity
productivity
amines
Surface reactions
Adsorbates
Discrete Fourier transforms
Stoichiometry
Hydroxyl Radical
Lithography
Masks
Etching
temperature
Capacitors
Permittivity
Metals

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Nam, Taewook ; Lee, Hyunho ; Choi, Taejin ; Seo, Seunggi ; Yoon, Chang Mo ; Choi, Yunjung ; Jeong, Heonjong ; Lingam, Hima K. ; Chitturi, Venkateswara R. ; Korolev, Andrey ; Ahn, Jong Hyun ; Kim, Hyungjun. / Low-temperature, high-growth-rate ALD of SiO2 using aminodisilane precursor. In: Applied Surface Science. 2019 ; Vol. 485. pp. 381-390.
@article{c348c344658b4620a96744d6ddaea18b,
title = "Low-temperature, high-growth-rate ALD of SiO2 using aminodisilane precursor",
abstract = "In the present study, SiO2 was deposited using the atomic layer deposition (ALD) with a 1,2-bis(diisopropylamino)disilane (BDIPADS) precursor. The use of this precursor exhibited a higher growth rate and lower initial growth temperature than the use of diisopropylaminosilane (DIPAS) did. The ALD reaction using BDIPADS produced SiO2 with excellent quality owing to the self-catalytic reaction between the amine ligand and O3; therefore, the SiO2 film has no impurities. When the growth temperature was increased gradually, the stoichiometry and density of SiO2 were improved also because the reaction between surface adsorbate species was nearly complete. ALD SiO2 exhibited a higher dielectric constant than the bulk SiO2 did, from the metal-oxide-semiconductor capacitor, because of the incorporated hydroxyl groups in the film. Furthermore, the etching characteristics were modulated by changing the growth temperature to ensure that the film can be used as a hard mask for lithography. From the DFT calculation, high reaction energy between the BDIPADS and Si–OH was observed. Moreover, the Si–Si cleavage results in the existence additional reaction sites, such as amine group, allowing low-temperature growth and enhanced productivity. Therefore, the number of Si atoms in a molecule affects the growth rate and initial growth temperature to ensure that BDIPADS is a highly excellent precursor for the SiO2 deposition; therefore, its use can lead to a remarkably high productivity.",
author = "Taewook Nam and Hyunho Lee and Taejin Choi and Seunggi Seo and Yoon, {Chang Mo} and Yunjung Choi and Heonjong Jeong and Lingam, {Hima K.} and Chitturi, {Venkateswara R.} and Andrey Korolev and Ahn, {Jong Hyun} and Hyungjun Kim",
year = "2019",
month = "8",
day = "15",
doi = "10.1016/j.apsusc.2019.03.227",
language = "English",
volume = "485",
pages = "381--390",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",

}

Nam, T, Lee, H, Choi, T, Seo, S, Yoon, CM, Choi, Y, Jeong, H, Lingam, HK, Chitturi, VR, Korolev, A, Ahn, JH & Kim, H 2019, 'Low-temperature, high-growth-rate ALD of SiO2 using aminodisilane precursor', Applied Surface Science, vol. 485, pp. 381-390. https://doi.org/10.1016/j.apsusc.2019.03.227

Low-temperature, high-growth-rate ALD of SiO2 using aminodisilane precursor. / Nam, Taewook; Lee, Hyunho; Choi, Taejin; Seo, Seunggi; Yoon, Chang Mo; Choi, Yunjung; Jeong, Heonjong; Lingam, Hima K.; Chitturi, Venkateswara R.; Korolev, Andrey; Ahn, Jong Hyun; Kim, Hyungjun.

In: Applied Surface Science, Vol. 485, 15.08.2019, p. 381-390.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Low-temperature, high-growth-rate ALD of SiO2 using aminodisilane precursor

AU - Nam, Taewook

AU - Lee, Hyunho

AU - Choi, Taejin

AU - Seo, Seunggi

AU - Yoon, Chang Mo

AU - Choi, Yunjung

AU - Jeong, Heonjong

AU - Lingam, Hima K.

AU - Chitturi, Venkateswara R.

AU - Korolev, Andrey

AU - Ahn, Jong Hyun

AU - Kim, Hyungjun

PY - 2019/8/15

Y1 - 2019/8/15

N2 - In the present study, SiO2 was deposited using the atomic layer deposition (ALD) with a 1,2-bis(diisopropylamino)disilane (BDIPADS) precursor. The use of this precursor exhibited a higher growth rate and lower initial growth temperature than the use of diisopropylaminosilane (DIPAS) did. The ALD reaction using BDIPADS produced SiO2 with excellent quality owing to the self-catalytic reaction between the amine ligand and O3; therefore, the SiO2 film has no impurities. When the growth temperature was increased gradually, the stoichiometry and density of SiO2 were improved also because the reaction between surface adsorbate species was nearly complete. ALD SiO2 exhibited a higher dielectric constant than the bulk SiO2 did, from the metal-oxide-semiconductor capacitor, because of the incorporated hydroxyl groups in the film. Furthermore, the etching characteristics were modulated by changing the growth temperature to ensure that the film can be used as a hard mask for lithography. From the DFT calculation, high reaction energy between the BDIPADS and Si–OH was observed. Moreover, the Si–Si cleavage results in the existence additional reaction sites, such as amine group, allowing low-temperature growth and enhanced productivity. Therefore, the number of Si atoms in a molecule affects the growth rate and initial growth temperature to ensure that BDIPADS is a highly excellent precursor for the SiO2 deposition; therefore, its use can lead to a remarkably high productivity.

AB - In the present study, SiO2 was deposited using the atomic layer deposition (ALD) with a 1,2-bis(diisopropylamino)disilane (BDIPADS) precursor. The use of this precursor exhibited a higher growth rate and lower initial growth temperature than the use of diisopropylaminosilane (DIPAS) did. The ALD reaction using BDIPADS produced SiO2 with excellent quality owing to the self-catalytic reaction between the amine ligand and O3; therefore, the SiO2 film has no impurities. When the growth temperature was increased gradually, the stoichiometry and density of SiO2 were improved also because the reaction between surface adsorbate species was nearly complete. ALD SiO2 exhibited a higher dielectric constant than the bulk SiO2 did, from the metal-oxide-semiconductor capacitor, because of the incorporated hydroxyl groups in the film. Furthermore, the etching characteristics were modulated by changing the growth temperature to ensure that the film can be used as a hard mask for lithography. From the DFT calculation, high reaction energy between the BDIPADS and Si–OH was observed. Moreover, the Si–Si cleavage results in the existence additional reaction sites, such as amine group, allowing low-temperature growth and enhanced productivity. Therefore, the number of Si atoms in a molecule affects the growth rate and initial growth temperature to ensure that BDIPADS is a highly excellent precursor for the SiO2 deposition; therefore, its use can lead to a remarkably high productivity.

UR - http://www.scopus.com/inward/record.url?scp=85064907925&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85064907925&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2019.03.227

DO - 10.1016/j.apsusc.2019.03.227

M3 - Article

AN - SCOPUS:85064907925

VL - 485

SP - 381

EP - 390

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -