We demonstrated solution-processed thin film transistors on a peroxo-zirconium oxide (ZrO2) dielectric with a maximum temperature of 350 °C. The formation of ZrO2 films was investigated by TG-DTA, FT-IR, and XPS analyses at various temperatures. We synthesized a zirconium oxide solution by adding hydrogen peroxide (H2O 2). The H2O2 forms peroxo groups in the ZrO2 film producing a dense-amorphous phase and a smooth surface film. Because of these characteristics, the ZrO2 film successfully blocked leakage current even in annealing at 300 °C. Finally, to demonstrate that the ZrO2 film is dielectric, we fabricated thin-film transistors (TFTs) with a solution-processed channel layer of indium zinc oxide (IZO) on ZrO2 films at 350 °C. These TFTs had a mobility of 7.21 cm2/(V s), a threshold voltage (Vth) of 3.22 V, and a Vth shift of 1.6 V under positive gate bias stress.
All Science Journal Classification (ASJC) codes
- Materials Science(all)