Low-temperature, high-performance solution-processed thin-film transistors with peroxo-zirconium oxide dielectric

Jee Ho Park, Young Bum Yoo, Keun Ho Lee, Woo Soon Jang, Jin Young Oh, Soo Sang Chae, Hong Koo Baik

Research output: Contribution to journalArticle

118 Citations (Scopus)

Abstract

We demonstrated solution-processed thin film transistors on a peroxo-zirconium oxide (ZrO2) dielectric with a maximum temperature of 350 °C. The formation of ZrO2 films was investigated by TG-DTA, FT-IR, and XPS analyses at various temperatures. We synthesized a zirconium oxide solution by adding hydrogen peroxide (H2O 2). The H2O2 forms peroxo groups in the ZrO2 film producing a dense-amorphous phase and a smooth surface film. Because of these characteristics, the ZrO2 film successfully blocked leakage current even in annealing at 300 °C. Finally, to demonstrate that the ZrO2 film is dielectric, we fabricated thin-film transistors (TFTs) with a solution-processed channel layer of indium zinc oxide (IZO) on ZrO2 films at 350 °C. These TFTs had a mobility of 7.21 cm2/(V s), a threshold voltage (Vth) of 3.22 V, and a Vth shift of 1.6 V under positive gate bias stress.

Original languageEnglish
Pages (from-to)410-417
Number of pages8
JournalACS Applied Materials and Interfaces
Volume5
Issue number2
DOIs
Publication statusPublished - 2013 Jan 23

Fingerprint

Thin film transistors
Zirconia
Temperature
Zinc Oxide
Indium
Dielectric films
Zinc oxide
Threshold voltage
Hydrogen peroxide
Leakage currents
Differential thermal analysis
Hydrogen Peroxide
X ray photoelectron spectroscopy
zirconium oxide
Annealing

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Park, Jee Ho ; Yoo, Young Bum ; Lee, Keun Ho ; Jang, Woo Soon ; Oh, Jin Young ; Chae, Soo Sang ; Baik, Hong Koo. / Low-temperature, high-performance solution-processed thin-film transistors with peroxo-zirconium oxide dielectric. In: ACS Applied Materials and Interfaces. 2013 ; Vol. 5, No. 2. pp. 410-417.
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abstract = "We demonstrated solution-processed thin film transistors on a peroxo-zirconium oxide (ZrO2) dielectric with a maximum temperature of 350 °C. The formation of ZrO2 films was investigated by TG-DTA, FT-IR, and XPS analyses at various temperatures. We synthesized a zirconium oxide solution by adding hydrogen peroxide (H2O 2). The H2O2 forms peroxo groups in the ZrO2 film producing a dense-amorphous phase and a smooth surface film. Because of these characteristics, the ZrO2 film successfully blocked leakage current even in annealing at 300 °C. Finally, to demonstrate that the ZrO2 film is dielectric, we fabricated thin-film transistors (TFTs) with a solution-processed channel layer of indium zinc oxide (IZO) on ZrO2 films at 350 °C. These TFTs had a mobility of 7.21 cm2/(V s), a threshold voltage (Vth) of 3.22 V, and a Vth shift of 1.6 V under positive gate bias stress.",
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Low-temperature, high-performance solution-processed thin-film transistors with peroxo-zirconium oxide dielectric. / Park, Jee Ho; Yoo, Young Bum; Lee, Keun Ho; Jang, Woo Soon; Oh, Jin Young; Chae, Soo Sang; Baik, Hong Koo.

In: ACS Applied Materials and Interfaces, Vol. 5, No. 2, 23.01.2013, p. 410-417.

Research output: Contribution to journalArticle

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AU - Yoo, Young Bum

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AU - Oh, Jin Young

AU - Chae, Soo Sang

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