Low-temperature metal-oxide thin-film transistors formed by directly photopatternable and combustible solution synthesis

You Seung Rim, Hyun Soo Lim, Hyun Jae Kim

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70 Citations (Scopus)


We investigated the formation of ultraviolet (UV)-assisted directly patternable solution-processed oxide semiconductor films and successfully fabricated thin-film transistors (TFTs) based on these films. An InGaZnO (IGZO) solution that was modified chemically with benzoylacetone (BzAc), whose chelate rings decomposed via a π-π* transition as result of UV irradiation, was used for the direct patterning. A TFT was fabricated using the directly patterned IGZO film, and it had better electrical characteristics than those of conventional photoresist (PR)-patterned TFTs. In addition, the nitric acid (HNO3) and acetylacetone (AcAc) modified In2O3 (NAc-In2O3) solution exhibited both strong UV absorption and high exothermic reaction. This method not only resulted in the formation of a low-energy path because of the combustion of the chemically modified metal-oxide solution but also allowed for photoreaction-induced direct patterning at low temperatures.

Original languageEnglish
Pages (from-to)3565-3571
Number of pages7
JournalACS Applied Materials and Interfaces
Issue number9
Publication statusPublished - 2013 May 8


All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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