Low temperature method to passivate oxygen vacancies in un-doped ZnO films using atomic layer deposition

Yue Wang; Kyung Mun Kang; Minjae Kim; Hyung Ho Park

doi:10.1016/j.tsf.2018.03.003

Low temperature method to passivate oxygen vacancies in un-doped ZnO films using atomic layer deposition

Yue Wang, Kyung Mun Kang, Minjae Kim, Hyung Ho Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Owing to oxygen vacancies, the as-prepared ZnO normally shows n-type semiconducting characteristic. This has restricted the preparation of high-quality p-type ZnO and the application of ZnO optoelectronic devices. Therefore, we studied a method of using H₂O₂ as an oxygen source to passivate oxygen vacancies (V_o) in ZnO films via atomic layer deposition (ALD). The temperature range for the self-limited growth of crystalline ZnO thin films by ALD using diethylzinc and H₂O₂ was found to be in the range of 80 to 150 °C. Our results show that the use of H₂O₂ as an oxygen source can provide an O-rich condition (instead of H₂O) for the growth of ZnO film, with a total preferential (002) orientation of the growth plane and decreased grain size. Further, the O-rich growth environment can suppress the formation of V_o and zinc interstitials and decrease the carrier concentration in ZnO (from 2.525 × 10¹⁹ cm⁻³ to 1.695 × 10¹² cm⁻³). This can lead to an increase in the film resistivity from 1.717 × 10⁻² Ω·cm for a ZnO film prepared using H₂O to 1.348 × 10⁴ Ω·cm for a ZnO film prepared using H₂O₂. Thus, H₂O₂ could be used to passivate V_o in ZnO at a low temperature, and it could be beneficial for the preparation of p-type ZnO films.

Original language	English
Pages (from-to)	852-858
Number of pages	7
Journal	Thin Solid Films
Volume	660
DOIs	https://doi.org/10.1016/j.tsf.2018.03.003
Publication status	Published - 2018 Aug 30

Bibliographical note

Funding Information:
This material is based on a work supported by the Ministry of Trade, Industry & Energy ( MOTIE , Korea) under the Industrial Strategic Technology Development Program. No. 10068075 , “Development of Mott-transition based forming-less non-volatile resistive switching memory & array”. Experiments at the PLS were supported in part by MSIP and POSTECH. Yue Wang thanks the China Scholarship Council (CSC) for financial support (No. 201608440332 ).

Funding Information:
This material is based on a work supported by the Ministry of Trade, Industry & Energy (MOTIE, Korea) under the Industrial Strategic Technology Development Program. No. 10068075, “Development of Mott-transition based forming-less non-volatile resistive switching memory & array”. Experiments at the PLS were supported in part by MSIP and POSTECH. Yue Wang thanks the China Scholarship Council (CSC) for financial support (No. 201608440332).

Publisher Copyright:
© 2018 Elsevier B.V.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2018.03.003

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@article{d7fff357ab8c4d2ca56fdbf4b7a82dc9,

title = "Low temperature method to passivate oxygen vacancies in un-doped ZnO films using atomic layer deposition",

abstract = "Owing to oxygen vacancies, the as-prepared ZnO normally shows n-type semiconducting characteristic. This has restricted the preparation of high-quality p-type ZnO and the application of ZnO optoelectronic devices. Therefore, we studied a method of using H2O2 as an oxygen source to passivate oxygen vacancies (Vo) in ZnO films via atomic layer deposition (ALD). The temperature range for the self-limited growth of crystalline ZnO thin films by ALD using diethylzinc and H2O2 was found to be in the range of 80 to 150 °C. Our results show that the use of H2O2 as an oxygen source can provide an O-rich condition (instead of H2O) for the growth of ZnO film, with a total preferential (002) orientation of the growth plane and decreased grain size. Further, the O-rich growth environment can suppress the formation of Vo and zinc interstitials and decrease the carrier concentration in ZnO (from 2.525 × 1019 cm−3 to 1.695 × 1012 cm−3). This can lead to an increase in the film resistivity from 1.717 × 10−2 Ω·cm for a ZnO film prepared using H2O to 1.348 × 104 Ω·cm for a ZnO film prepared using H2O2. Thus, H2O2 could be used to passivate Vo in ZnO at a low temperature, and it could be beneficial for the preparation of p-type ZnO films.",

author = "Yue Wang and Kang, {Kyung Mun} and Minjae Kim and Park, {Hyung Ho}",

note = "Funding Information: This material is based on a work supported by the Ministry of Trade, Industry & Energy ( MOTIE , Korea) under the Industrial Strategic Technology Development Program. No. 10068075 , “Development of Mott-transition based forming-less non-volatile resistive switching memory & array”. Experiments at the PLS were supported in part by MSIP and POSTECH. Yue Wang thanks the China Scholarship Council (CSC) for financial support (No. 201608440332 ). Funding Information: This material is based on a work supported by the Ministry of Trade, Industry & Energy (MOTIE, Korea) under the Industrial Strategic Technology Development Program. No. 10068075, “Development of Mott-transition based forming-less non-volatile resistive switching memory & array”. Experiments at the PLS were supported in part by MSIP and POSTECH. Yue Wang thanks the China Scholarship Council (CSC) for financial support (No. 201608440332). Publisher Copyright: {\textcopyright} 2018 Elsevier B.V.",

year = "2018",

month = aug,

day = "30",

doi = "10.1016/j.tsf.2018.03.003",

language = "English",

volume = "660",

pages = "852--858",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

}

TY - JOUR

T1 - Low temperature method to passivate oxygen vacancies in un-doped ZnO films using atomic layer deposition

AU - Wang, Yue

AU - Kang, Kyung Mun

AU - Kim, Minjae

AU - Park, Hyung Ho

N1 - Funding Information: This material is based on a work supported by the Ministry of Trade, Industry & Energy ( MOTIE , Korea) under the Industrial Strategic Technology Development Program. No. 10068075 , “Development of Mott-transition based forming-less non-volatile resistive switching memory & array”. Experiments at the PLS were supported in part by MSIP and POSTECH. Yue Wang thanks the China Scholarship Council (CSC) for financial support (No. 201608440332 ). Funding Information: This material is based on a work supported by the Ministry of Trade, Industry & Energy (MOTIE, Korea) under the Industrial Strategic Technology Development Program. No. 10068075, “Development of Mott-transition based forming-less non-volatile resistive switching memory & array”. Experiments at the PLS were supported in part by MSIP and POSTECH. Yue Wang thanks the China Scholarship Council (CSC) for financial support (No. 201608440332). Publisher Copyright: © 2018 Elsevier B.V.

PY - 2018/8/30

Y1 - 2018/8/30

N2 - Owing to oxygen vacancies, the as-prepared ZnO normally shows n-type semiconducting characteristic. This has restricted the preparation of high-quality p-type ZnO and the application of ZnO optoelectronic devices. Therefore, we studied a method of using H2O2 as an oxygen source to passivate oxygen vacancies (Vo) in ZnO films via atomic layer deposition (ALD). The temperature range for the self-limited growth of crystalline ZnO thin films by ALD using diethylzinc and H2O2 was found to be in the range of 80 to 150 °C. Our results show that the use of H2O2 as an oxygen source can provide an O-rich condition (instead of H2O) for the growth of ZnO film, with a total preferential (002) orientation of the growth plane and decreased grain size. Further, the O-rich growth environment can suppress the formation of Vo and zinc interstitials and decrease the carrier concentration in ZnO (from 2.525 × 1019 cm−3 to 1.695 × 1012 cm−3). This can lead to an increase in the film resistivity from 1.717 × 10−2 Ω·cm for a ZnO film prepared using H2O to 1.348 × 104 Ω·cm for a ZnO film prepared using H2O2. Thus, H2O2 could be used to passivate Vo in ZnO at a low temperature, and it could be beneficial for the preparation of p-type ZnO films.

AB - Owing to oxygen vacancies, the as-prepared ZnO normally shows n-type semiconducting characteristic. This has restricted the preparation of high-quality p-type ZnO and the application of ZnO optoelectronic devices. Therefore, we studied a method of using H2O2 as an oxygen source to passivate oxygen vacancies (Vo) in ZnO films via atomic layer deposition (ALD). The temperature range for the self-limited growth of crystalline ZnO thin films by ALD using diethylzinc and H2O2 was found to be in the range of 80 to 150 °C. Our results show that the use of H2O2 as an oxygen source can provide an O-rich condition (instead of H2O) for the growth of ZnO film, with a total preferential (002) orientation of the growth plane and decreased grain size. Further, the O-rich growth environment can suppress the formation of Vo and zinc interstitials and decrease the carrier concentration in ZnO (from 2.525 × 1019 cm−3 to 1.695 × 1012 cm−3). This can lead to an increase in the film resistivity from 1.717 × 10−2 Ω·cm for a ZnO film prepared using H2O to 1.348 × 104 Ω·cm for a ZnO film prepared using H2O2. Thus, H2O2 could be used to passivate Vo in ZnO at a low temperature, and it could be beneficial for the preparation of p-type ZnO films.

UR - http://www.scopus.com/inward/record.url?scp=85042931121&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85042931121&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2018.03.003

DO - 10.1016/j.tsf.2018.03.003

M3 - Article

AN - SCOPUS:85042931121

SN - 0040-6090

VL - 660

SP - 852

EP - 858

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Low temperature method to passivate oxygen vacancies in un-doped ZnO films using atomic layer deposition

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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