Abstract
A novel process of wafer bonding between InP and a garnet crystal (Gd 3Ga5O12, CeY2Fe5O 12) based on O2 plasma surface-activation and low temperature heat treatment is presented. The O2 plasma assisted wafer bonding process was found to be very effective in bonding of InP and Gd 3Ga5O12, providing good bonding strength and hydrophilicity as well as no voids in the interface, which is crucial for fabrication of an integrated optical waveguide isolator. The isolation ratio of an integrated optical waveguide isolator fabricated by the O2 plasma assisted wafer bonding process was obtained to be 2.9 dB.
| Original language | English |
|---|---|
| Title of host publication | Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia |
| Publisher | Trans Tech Publications Ltd |
| Pages | 475-478 |
| Number of pages | 4 |
| Edition | PART 1 |
| ISBN (Print) | 3908451310, 9783908451310 |
| Publication status | Published - 2007 Jan 1 |
| Event | IUMRS International Conference in Asia 2006, IUMRS-ICA 2006 - Jeju, Korea, Republic of Duration: 2006 Sep 10 → 2006 Sep 14 |
Publication series
| Name | Solid State Phenomena |
|---|---|
| Number | PART 1 |
| Volume | 124-126 |
| ISSN (Print) | 1012-0394 |
Other
| Other | IUMRS International Conference in Asia 2006, IUMRS-ICA 2006 |
|---|---|
| Country | Korea, Republic of |
| City | Jeju |
| Period | 06/9/10 → 06/9/14 |
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All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Materials Science(all)
- Condensed Matter Physics
Cite this
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Low temperature O2 plasma-assisted wafer bonding of InP and a garnet crystal for an optical waveguide isolator. / Roh, J. W.; Yang, J. S.; Ok, S. H.; Woo, D. H.; Byun, Y. T.; Jhon, Y. M.; Mizumoto, T.; Lee, W. Y.; Lee, S.
Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia. PART 1. ed. Trans Tech Publications Ltd, 2007. p. 475-478 (Solid State Phenomena; Vol. 124-126, No. PART 1).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Low temperature O2 plasma-assisted wafer bonding of InP and a garnet crystal for an optical waveguide isolator
AU - Roh, J. W.
AU - Yang, J. S.
AU - Ok, S. H.
AU - Woo, D. H.
AU - Byun, Y. T.
AU - Jhon, Y. M.
AU - Mizumoto, T.
AU - Lee, W. Y.
AU - Lee, S.
PY - 2007/1/1
Y1 - 2007/1/1
N2 - A novel process of wafer bonding between InP and a garnet crystal (Gd 3Ga5O12, CeY2Fe5O 12) based on O2 plasma surface-activation and low temperature heat treatment is presented. The O2 plasma assisted wafer bonding process was found to be very effective in bonding of InP and Gd 3Ga5O12, providing good bonding strength and hydrophilicity as well as no voids in the interface, which is crucial for fabrication of an integrated optical waveguide isolator. The isolation ratio of an integrated optical waveguide isolator fabricated by the O2 plasma assisted wafer bonding process was obtained to be 2.9 dB.
AB - A novel process of wafer bonding between InP and a garnet crystal (Gd 3Ga5O12, CeY2Fe5O 12) based on O2 plasma surface-activation and low temperature heat treatment is presented. The O2 plasma assisted wafer bonding process was found to be very effective in bonding of InP and Gd 3Ga5O12, providing good bonding strength and hydrophilicity as well as no voids in the interface, which is crucial for fabrication of an integrated optical waveguide isolator. The isolation ratio of an integrated optical waveguide isolator fabricated by the O2 plasma assisted wafer bonding process was obtained to be 2.9 dB.
UR - http://www.scopus.com/inward/record.url?scp=38549152426&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=38549152426&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:38549152426
SN - 3908451310
SN - 9783908451310
T3 - Solid State Phenomena
SP - 475
EP - 478
BT - Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia
PB - Trans Tech Publications Ltd
ER -