Low temperature O2 plasma-assisted wafer bonding of InP and a garnet crystal for an optical waveguide isolator

J. W. Roh; J. S. Yang; S. H. Ok; D. H. Woo; Y. T. Byun; Y. M. Jhon; T. Mizumoto; W. Y. Lee; S. Lee

doi:10.4028/3-908451-31-0.475

Low temperature O₂ plasma-assisted wafer bonding of InP and a garnet crystal for an optical waveguide isolator

J. W. Roh, J. S. Yang, S. H. Ok, D. H. Woo, Y. T. Byun, Y. M. Jhon, T. Mizumoto, W. Y. Lee, S. Lee

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

A novel process of wafer bonding between InP and a garnet crystal (Gd ₃Ga₅O₁₂, CeY₂Fe₅O ₁₂) based on O₂ plasma surface-activation and low temperature heat treatment is presented. The O₂ plasma assisted wafer bonding process was found to be very effective in bonding of InP and Gd ₃Ga₅O₁₂, providing good bonding strength and hydrophilicity as well as no voids in the interface, which is crucial for fabrication of an integrated optical waveguide isolator. The isolation ratio of an integrated optical waveguide isolator fabricated by the O₂ plasma assisted wafer bonding process was obtained to be 2.9 dB.

Original language	English
Title of host publication	Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia
Publisher	Trans Tech Publications Ltd
Pages	475-478
Number of pages	4
Edition	PART 1
ISBN (Print)	3908451310, 9783908451310
DOIs	https://doi.org/10.4028/3-908451-31-0.475
Publication status	Published - 2007
Event	IUMRS International Conference in Asia 2006, IUMRS-ICA 2006 - Jeju, Korea, Republic of Duration: 2006 Sep 10 → 2006 Sep 14

Publication series

Name	Solid State Phenomena
Number	PART 1
Volume	124-126
ISSN (Print)	1012-0394

Other

Other	IUMRS International Conference in Asia 2006, IUMRS-ICA 2006
Country	Korea, Republic of
City	Jeju
Period	06/9/10 → 06/9/14

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Materials Science(all)
Condensed Matter Physics

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Roh, J. W., Yang, J. S., Ok, S. H., Woo, D. H., Byun, Y. T., Jhon, Y. M., Mizumoto, T., Lee, W. Y., & Lee, S. (2007). Low temperature O₂ plasma-assisted wafer bonding of InP and a garnet crystal for an optical waveguide isolator. In Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia (PART 1 ed., pp. 475-478). (Solid State Phenomena; Vol. 124-126, No. PART 1). Trans Tech Publications Ltd. https://doi.org/10.4028/3-908451-31-0.475

Roh, J. W. ; Yang, J. S. ; Ok, S. H. ; Woo, D. H. ; Byun, Y. T. ; Jhon, Y. M. ; Mizumoto, T. ; Lee, W. Y. ; Lee, S. / Low temperature O₂ plasma-assisted wafer bonding of InP and a garnet crystal for an optical waveguide isolator. Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia. PART 1. ed. Trans Tech Publications Ltd, 2007. pp. 475-478 (Solid State Phenomena; PART 1).

@inproceedings{a0ab4b0deb044c189750f3a44fa16c84,

title = "Low temperature O2 plasma-assisted wafer bonding of InP and a garnet crystal for an optical waveguide isolator",

abstract = "A novel process of wafer bonding between InP and a garnet crystal (Gd 3Ga5O12, CeY2Fe5O 12) based on O2 plasma surface-activation and low temperature heat treatment is presented. The O2 plasma assisted wafer bonding process was found to be very effective in bonding of InP and Gd 3Ga5O12, providing good bonding strength and hydrophilicity as well as no voids in the interface, which is crucial for fabrication of an integrated optical waveguide isolator. The isolation ratio of an integrated optical waveguide isolator fabricated by the O2 plasma assisted wafer bonding process was obtained to be 2.9 dB.",

author = "Roh, {J. W.} and Yang, {J. S.} and Ok, {S. H.} and Woo, {D. H.} and Byun, {Y. T.} and Jhon, {Y. M.} and T. Mizumoto and Lee, {W. Y.} and S. Lee",

year = "2007",

doi = "10.4028/3-908451-31-0.475",

language = "English",

isbn = "3908451310",

series = "Solid State Phenomena",

publisher = "Trans Tech Publications Ltd",

number = "PART 1",

pages = "475--478",

booktitle = "Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia",

edition = "PART 1",

}

Roh, JW, Yang, JS, Ok, SH, Woo, DH, Byun, YT, Jhon, YM, Mizumoto, T, Lee, WY & Lee, S 2007, Low temperature O₂ plasma-assisted wafer bonding of InP and a garnet crystal for an optical waveguide isolator. in Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia. PART 1 edn, Solid State Phenomena, no. PART 1, vol. 124-126, Trans Tech Publications Ltd, pp. 475-478, IUMRS International Conference in Asia 2006, IUMRS-ICA 2006, Jeju, Korea, Republic of, 06/9/10. https://doi.org/10.4028/3-908451-31-0.475

Low temperature O₂ plasma-assisted wafer bonding of InP and a garnet crystal for an optical waveguide isolator. / Roh, J. W.; Yang, J. S.; Ok, S. H.; Woo, D. H.; Byun, Y. T.; Jhon, Y. M.; Mizumoto, T.; Lee, W. Y.; Lee, S.

Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia. PART 1. ed. Trans Tech Publications Ltd, 2007. p. 475-478 (Solid State Phenomena; Vol. 124-126, No. PART 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Low temperature O2 plasma-assisted wafer bonding of InP and a garnet crystal for an optical waveguide isolator

AU - Roh, J. W.

AU - Yang, J. S.

AU - Ok, S. H.

AU - Woo, D. H.

AU - Byun, Y. T.

AU - Jhon, Y. M.

AU - Mizumoto, T.

AU - Lee, W. Y.

AU - Lee, S.

PY - 2007

Y1 - 2007

N2 - A novel process of wafer bonding between InP and a garnet crystal (Gd 3Ga5O12, CeY2Fe5O 12) based on O2 plasma surface-activation and low temperature heat treatment is presented. The O2 plasma assisted wafer bonding process was found to be very effective in bonding of InP and Gd 3Ga5O12, providing good bonding strength and hydrophilicity as well as no voids in the interface, which is crucial for fabrication of an integrated optical waveguide isolator. The isolation ratio of an integrated optical waveguide isolator fabricated by the O2 plasma assisted wafer bonding process was obtained to be 2.9 dB.

AB - A novel process of wafer bonding between InP and a garnet crystal (Gd 3Ga5O12, CeY2Fe5O 12) based on O2 plasma surface-activation and low temperature heat treatment is presented. The O2 plasma assisted wafer bonding process was found to be very effective in bonding of InP and Gd 3Ga5O12, providing good bonding strength and hydrophilicity as well as no voids in the interface, which is crucial for fabrication of an integrated optical waveguide isolator. The isolation ratio of an integrated optical waveguide isolator fabricated by the O2 plasma assisted wafer bonding process was obtained to be 2.9 dB.

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U2 - 10.4028/3-908451-31-0.475

DO - 10.4028/3-908451-31-0.475

M3 - Conference contribution

AN - SCOPUS:38549152426

SN - 3908451310

SN - 9783908451310

T3 - Solid State Phenomena

SP - 475

EP - 478

BT - Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia

PB - Trans Tech Publications Ltd

T2 - IUMRS International Conference in Asia 2006, IUMRS-ICA 2006

Y2 - 10 September 2006 through 14 September 2006

ER -

Roh JW, Yang JS, Ok SH, Woo DH, Byun YT, Jhon YM et al. Low temperature O₂ plasma-assisted wafer bonding of InP and a garnet crystal for an optical waveguide isolator. In Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia. PART 1 ed. Trans Tech Publications Ltd. 2007. p. 475-478. (Solid State Phenomena; PART 1). https://doi.org/10.4028/3-908451-31-0.475