Low temperature O2 plasma-assisted wafer bonding of InP and a garnet crystal for an optical waveguide isolator

J. W. Roh, J. S. Yang, S. H. Ok, D. H. Woo, Y. T. Byun, Y. M. Jhon, T. Mizumoto, W. Y. Lee, S. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A novel process of wafer bonding between InP and a garnet crystal (Gd 3Ga5O12, CeY2Fe5O 12) based on O2 plasma surface-activation and low temperature heat treatment is presented. The O2 plasma assisted wafer bonding process was found to be very effective in bonding of InP and Gd 3Ga5O12, providing good bonding strength and hydrophilicity as well as no voids in the interface, which is crucial for fabrication of an integrated optical waveguide isolator. The isolation ratio of an integrated optical waveguide isolator fabricated by the O2 plasma assisted wafer bonding process was obtained to be 2.9 dB.

Original languageEnglish
Title of host publicationAdvances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia
PublisherTrans Tech Publications Ltd
Pages475-478
Number of pages4
EditionPART 1
ISBN (Print)3908451310, 9783908451310
Publication statusPublished - 2007 Jan 1
EventIUMRS International Conference in Asia 2006, IUMRS-ICA 2006 - Jeju, Korea, Republic of
Duration: 2006 Sep 102006 Sep 14

Publication series

NameSolid State Phenomena
NumberPART 1
Volume124-126
ISSN (Print)1012-0394

Other

OtherIUMRS International Conference in Asia 2006, IUMRS-ICA 2006
CountryKorea, Republic of
CityJeju
Period06/9/1006/9/14

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All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Roh, J. W., Yang, J. S., Ok, S. H., Woo, D. H., Byun, Y. T., Jhon, Y. M., Mizumoto, T., Lee, W. Y., & Lee, S. (2007). Low temperature O2 plasma-assisted wafer bonding of InP and a garnet crystal for an optical waveguide isolator. In Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia (PART 1 ed., pp. 475-478). (Solid State Phenomena; Vol. 124-126, No. PART 1). Trans Tech Publications Ltd.