Low temperature poly-Si thin film transistor on plastic substrates

Jang Yeon Kwon, Do Young Kim, Hans S. Cho, Kyung Bae Park, Ji Sim Jung, Jong Man Kim, Young Soo Park, Takashi Noguchi

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

Poly-Si TFT (Thin Film transistor) fabricated below 170°.C using excimer laser crystallization of sputtered Si films was characterized. In particular, a gate insulator with a breakdown field exceeding 8 MV/cm was deposited by using ICP (Inductively Coupled Plasma) CVD (Chemical Vapor Deposition). A buffer layer possessing high thermal conductivity was inserted between the active channel and the plastic substrate, in order to protect the plastic substrate from the thermal energy of the laser and to increase adhesion of Si film on plastic. Using this method, we successfully fabricate TFT with a stable electron field-effect mobility value greater than 14.7 cm 2/Vsec.

Original languageEnglish
Pages (from-to)667-671
Number of pages5
JournalIEICE Transactions on Electronics
VolumeE88-C
Issue number4
DOIs
Publication statusPublished - 2005 Apr

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Kwon, J. Y., Kim, D. Y., Cho, H. S., Park, K. B., Jung, J. S., Kim, J. M., Park, Y. S., & Noguchi, T. (2005). Low temperature poly-Si thin film transistor on plastic substrates. IEICE Transactions on Electronics, E88-C(4), 667-671. https://doi.org/10.1093/ietele/e88-c.4.667