Low-temperature process for advanced Si thin film transistor technology

Takashi Noguchi; Jang Yeon Kwon; Ji Sim Jung; Jong Man Kim; Kyung Bae Park; Hyuck Lim; Do Young Kim; Hans S. Cho; Hua Xian Yin; Wenxyu Xianyu

doi:10.1143/JJAP.45.4321

Low-temperature process for advanced Si thin film transistor technology

Takashi Noguchi, Jang Yeon Kwon, Ji Sim Jung, Jong Man Kim, Kyung Bae Park, Hyuck Lim, Do Young Kim, Hans S. Cho, Hua Xian Yin, Wenxyu Xianyu

School of Integrated Technology

Research output: Contribution to journal › Review article › peer-review

20 Citations (Scopus)

Abstract

Low-temperature Si thin film transistor (TFT) and its possibility as a new device process are described. Currently, an extensive study is performed in order to realize an advanced system on glass (SoG) by incorporating additional functional devices or circuits. By reducing further the process temperature down to 200°C or below and by improving the fabrication process as an ultra-low temperature polycrystalline Si (U-LTPS), not only liquid crystal display (LCD) but also organic light emitting diode (O-LED) flat panel display (FPD) driven by using polycrystalline Si (poly-Si) TFTs is expected to be mounted on a flexible plastic substrate. Although technical issues to be solved remain for the fabrication of channels, gate insulator etc., it is possible for the Si TFT to be developed into a smart system on plastic for unique applications as well as a functional Si system-on-insulator in a ubiquitous information technology (IT) era.

Original language	English
Pages (from-to)	4321-4324
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	5 B
DOIs	https://doi.org/10.1143/JJAP.45.4321
Publication status	Published - 2006 May 25

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.45.4321

Fingerprint Dive into the research topics of 'Low-temperature process for advanced Si thin film transistor technology'. Together they form a unique fingerprint.

Cite this

Noguchi, Takashi ; Kwon, Jang Yeon ; Jung, Ji Sim ; Kim, Jong Man ; Park, Kyung Bae ; Lim, Hyuck ; Kim, Do Young ; Cho, Hans S. ; Yin, Hua Xian ; Xianyu, Wenxyu. / Low-temperature process for advanced Si thin film transistor technology. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2006 ; Vol. 45, No. 5 B. pp. 4321-4324.

@article{089ae903d8194351bb2720e061572af5,

title = "Low-temperature process for advanced Si thin film transistor technology",

abstract = "Low-temperature Si thin film transistor (TFT) and its possibility as a new device process are described. Currently, an extensive study is performed in order to realize an advanced system on glass (SoG) by incorporating additional functional devices or circuits. By reducing further the process temperature down to 200°C or below and by improving the fabrication process as an ultra-low temperature polycrystalline Si (U-LTPS), not only liquid crystal display (LCD) but also organic light emitting diode (O-LED) flat panel display (FPD) driven by using polycrystalline Si (poly-Si) TFTs is expected to be mounted on a flexible plastic substrate. Although technical issues to be solved remain for the fabrication of channels, gate insulator etc., it is possible for the Si TFT to be developed into a smart system on plastic for unique applications as well as a functional Si system-on-insulator in a ubiquitous information technology (IT) era.",

author = "Takashi Noguchi and Kwon, {Jang Yeon} and Jung, {Ji Sim} and Kim, {Jong Man} and Park, {Kyung Bae} and Hyuck Lim and Kim, {Do Young} and Cho, {Hans S.} and Yin, {Hua Xian} and Wenxyu Xianyu",

year = "2006",

month = may,

day = "25",

doi = "10.1143/JJAP.45.4321",

language = "English",

volume = "45",

pages = "4321--4324",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "5 B",

}

Low-temperature process for advanced Si thin film transistor technology. / Noguchi, Takashi; Kwon, Jang Yeon; Jung, Ji Sim; Kim, Jong Man; Park, Kyung Bae; Lim, Hyuck; Kim, Do Young; Cho, Hans S.; Yin, Hua Xian; Xianyu, Wenxyu.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 5 B, 25.05.2006, p. 4321-4324.

Research output: Contribution to journal › Review article › peer-review

TY - JOUR

T1 - Low-temperature process for advanced Si thin film transistor technology

AU - Noguchi, Takashi

AU - Kwon, Jang Yeon

AU - Jung, Ji Sim

AU - Kim, Jong Man

AU - Park, Kyung Bae

AU - Lim, Hyuck

AU - Kim, Do Young

AU - Cho, Hans S.

AU - Yin, Hua Xian

AU - Xianyu, Wenxyu

PY - 2006/5/25

Y1 - 2006/5/25

N2 - Low-temperature Si thin film transistor (TFT) and its possibility as a new device process are described. Currently, an extensive study is performed in order to realize an advanced system on glass (SoG) by incorporating additional functional devices or circuits. By reducing further the process temperature down to 200°C or below and by improving the fabrication process as an ultra-low temperature polycrystalline Si (U-LTPS), not only liquid crystal display (LCD) but also organic light emitting diode (O-LED) flat panel display (FPD) driven by using polycrystalline Si (poly-Si) TFTs is expected to be mounted on a flexible plastic substrate. Although technical issues to be solved remain for the fabrication of channels, gate insulator etc., it is possible for the Si TFT to be developed into a smart system on plastic for unique applications as well as a functional Si system-on-insulator in a ubiquitous information technology (IT) era.

AB - Low-temperature Si thin film transistor (TFT) and its possibility as a new device process are described. Currently, an extensive study is performed in order to realize an advanced system on glass (SoG) by incorporating additional functional devices or circuits. By reducing further the process temperature down to 200°C or below and by improving the fabrication process as an ultra-low temperature polycrystalline Si (U-LTPS), not only liquid crystal display (LCD) but also organic light emitting diode (O-LED) flat panel display (FPD) driven by using polycrystalline Si (poly-Si) TFTs is expected to be mounted on a flexible plastic substrate. Although technical issues to be solved remain for the fabrication of channels, gate insulator etc., it is possible for the Si TFT to be developed into a smart system on plastic for unique applications as well as a functional Si system-on-insulator in a ubiquitous information technology (IT) era.

UR - http://www.scopus.com/inward/record.url?scp=33744483532&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33744483532&partnerID=8YFLogxK

U2 - 10.1143/JJAP.45.4321

DO - 10.1143/JJAP.45.4321

M3 - Review article

AN - SCOPUS:33744483532

VL - 45

SP - 4321

EP - 4324

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 5 B

ER -