Low-temperature process for advanced Si thin film transistor technology

Takashi Noguchi; Jang Yeon Kwon; Ji Sim Jung; Jong Man Kim; Kyung Bae Park; Hyuck Lim; Do Young Kim; Hans S. Cho; Hua Xian Yin; Wenxyu Xianyu

doi:10.1143/JJAP.45.4321

Low-temperature process for advanced Si thin film transistor technology

Takashi Noguchi, Jang Yeon Kwon, Ji Sim Jung, Jong Man Kim, Kyung Bae Park, Hyuck Lim, Do Young Kim, Hans S. Cho, Hua Xian Yin, Wenxyu Xianyu

School of Integrated Technology

Research output: Contribution to journal › Review article

20 Citations (Scopus)

Abstract

Low-temperature Si thin film transistor (TFT) and its possibility as a new device process are described. Currently, an extensive study is performed in order to realize an advanced system on glass (SoG) by incorporating additional functional devices or circuits. By reducing further the process temperature down to 200°C or below and by improving the fabrication process as an ultra-low temperature polycrystalline Si (U-LTPS), not only liquid crystal display (LCD) but also organic light emitting diode (O-LED) flat panel display (FPD) driven by using polycrystalline Si (poly-Si) TFTs is expected to be mounted on a flexible plastic substrate. Although technical issues to be solved remain for the fabrication of channels, gate insulator etc., it is possible for the Si TFT to be developed into a smart system on plastic for unique applications as well as a functional Si system-on-insulator in a ubiquitous information technology (IT) era.

Original language	English
Pages (from-to)	4321-4324
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	5 B
DOIs	https://doi.org/10.1143/JJAP.45.4321
Publication status	Published - 2006 May 25

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All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Cite this

Noguchi, T., Kwon, J. Y., Jung, J. S., Kim, J. M., Park, K. B., Lim, H., Kim, D. Y., Cho, H. S., Yin, H. X., & Xianyu, W. (2006). Low-temperature process for advanced Si thin film transistor technology. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 45(5 B), 4321-4324. https://doi.org/10.1143/JJAP.45.4321

Noguchi, Takashi ; Kwon, Jang Yeon ; Jung, Ji Sim ; Kim, Jong Man ; Park, Kyung Bae ; Lim, Hyuck ; Kim, Do Young ; Cho, Hans S. ; Yin, Hua Xian ; Xianyu, Wenxyu. / Low-temperature process for advanced Si thin film transistor technology. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2006 ; Vol. 45, No. 5 B. pp. 4321-4324.

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Low-temperature process for advanced Si thin film transistor technology. / Noguchi, Takashi; Kwon, Jang Yeon; Jung, Ji Sim; Kim, Jong Man; Park, Kyung Bae; Lim, Hyuck; Kim, Do Young; Cho, Hans S.; Yin, Hua Xian; Xianyu, Wenxyu.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 5 B, 25.05.2006, p. 4321-4324.

Research output: Contribution to journal › Review article

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Access to Document

10.1143/JJAP.45.4321