Abstract
Low-temperature Si thin film transistor (TFT) and its possibility as a new device process are described. Currently, an extensive study is performed in order to realize an advanced system on glass (SoG) by incorporating additional functional devices or circuits. By reducing further the process temperature down to 200°C or below and by improving the fabrication process as an ultra-low temperature polycrystalline Si (U-LTPS), not only liquid crystal display (LCD) but also organic light emitting diode (O-LED) flat panel display (FPD) driven by using polycrystalline Si (poly-Si) TFTs is expected to be mounted on a flexible plastic substrate. Although technical issues to be solved remain for the fabrication of channels, gate insulator etc., it is possible for the Si TFT to be developed into a smart system on plastic for unique applications as well as a functional Si system-on-insulator in a ubiquitous information technology (IT) era.
| Original language | English |
|---|---|
| Pages (from-to) | 4321-4324 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 45 |
| Issue number | 5 B |
| DOIs | |
| Publication status | Published - 2006 May 25 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Low-temperature process for advanced Si thin film transistor technology. / Noguchi, Takashi; Kwon, Jang Yeon; Jung, Ji Sim; Kim, Jong Man; Park, Kyung Bae; Lim, Hyuck; Kim, Do Young; Cho, Hans S.; Yin, Hua Xian; Xianyu, Wenxyu.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 5 B, 25.05.2006, p. 4321-4324.Research output: Contribution to journal › Review article
TY - JOUR
T1 - Low-temperature process for advanced Si thin film transistor technology
AU - Noguchi, Takashi
AU - Kwon, Jang Yeon
AU - Jung, Ji Sim
AU - Kim, Jong Man
AU - Park, Kyung Bae
AU - Lim, Hyuck
AU - Kim, Do Young
AU - Cho, Hans S.
AU - Yin, Hua Xian
AU - Xianyu, Wenxyu
PY - 2006/5/25
Y1 - 2006/5/25
N2 - Low-temperature Si thin film transistor (TFT) and its possibility as a new device process are described. Currently, an extensive study is performed in order to realize an advanced system on glass (SoG) by incorporating additional functional devices or circuits. By reducing further the process temperature down to 200°C or below and by improving the fabrication process as an ultra-low temperature polycrystalline Si (U-LTPS), not only liquid crystal display (LCD) but also organic light emitting diode (O-LED) flat panel display (FPD) driven by using polycrystalline Si (poly-Si) TFTs is expected to be mounted on a flexible plastic substrate. Although technical issues to be solved remain for the fabrication of channels, gate insulator etc., it is possible for the Si TFT to be developed into a smart system on plastic for unique applications as well as a functional Si system-on-insulator in a ubiquitous information technology (IT) era.
AB - Low-temperature Si thin film transistor (TFT) and its possibility as a new device process are described. Currently, an extensive study is performed in order to realize an advanced system on glass (SoG) by incorporating additional functional devices or circuits. By reducing further the process temperature down to 200°C or below and by improving the fabrication process as an ultra-low temperature polycrystalline Si (U-LTPS), not only liquid crystal display (LCD) but also organic light emitting diode (O-LED) flat panel display (FPD) driven by using polycrystalline Si (poly-Si) TFTs is expected to be mounted on a flexible plastic substrate. Although technical issues to be solved remain for the fabrication of channels, gate insulator etc., it is possible for the Si TFT to be developed into a smart system on plastic for unique applications as well as a functional Si system-on-insulator in a ubiquitous information technology (IT) era.
UR - http://www.scopus.com/inward/record.url?scp=33744483532&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33744483532&partnerID=8YFLogxK
U2 - 10.1143/JJAP.45.4321
DO - 10.1143/JJAP.45.4321
M3 - Review article
AN - SCOPUS:33744483532
VL - 45
SP - 4321
EP - 4324
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 5 B
ER -