Low temperature processes of poly-Si TFT backplane for flexible AM-OLEDs

Wan Shick Hong, Sung Hyun Lee, Chul Lae Cho, Kyung Eun Lee, Sae Bum Kim, Jongman Kim, Jang-Yeon Kwon, Takashi Noguchi

Research output: Contribution to journalConference article

Abstract

Low temperature deposition of silicon and silicon nitride films by catalytic CVD technique was studied for application to thin film transistors on plastic substrates for flexible AMOLEDs. The substrate temperature initially held at room temperature, and was controlled successfully below 150°C during the entire deposition process. Amorphous silicon films having good adhesion, good surface morphology and sufficiently low content of atomic hydrogen were obtained and could be successfully crystallized using excimer laser without a prior dehydrogenation step. SiNx films showed a good refractive index, a high deposition rate, a moderate breakdown field and a dielectric constant. The Cat-CVD silicon and silicon nitride films can be good candidates for fabricating thin films transistors on plastic substrates to drive active-matrix organic light emitting display.

Original languageEnglish
Pages (from-to)785-789
Number of pages5
JournalProceedings of International Meeting on Information Display
Volume1
Publication statusPublished - 2006 Dec 1
Event5th International Meeting on Information Display - Seoul, Korea, Republic of
Duration: 2005 Jul 192005 Jul 23

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Organic light emitting diodes (OLED)
Polysilicon
Thin film transistors
Silicon nitride
Chemical vapor deposition
Substrates
Plastics
Silicon
Temperature
Excimer lasers
Dehydrogenation
Deposition rates
Amorphous silicon
Surface morphology
Refractive index
Permittivity
Adhesion
Display devices
Hydrogen

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Hong, W. S., Lee, S. H., Cho, C. L., Lee, K. E., Kim, S. B., Kim, J., ... Noguchi, T. (2006). Low temperature processes of poly-Si TFT backplane for flexible AM-OLEDs. Proceedings of International Meeting on Information Display, 1, 785-789.
Hong, Wan Shick ; Lee, Sung Hyun ; Cho, Chul Lae ; Lee, Kyung Eun ; Kim, Sae Bum ; Kim, Jongman ; Kwon, Jang-Yeon ; Noguchi, Takashi. / Low temperature processes of poly-Si TFT backplane for flexible AM-OLEDs. In: Proceedings of International Meeting on Information Display. 2006 ; Vol. 1. pp. 785-789.
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abstract = "Low temperature deposition of silicon and silicon nitride films by catalytic CVD technique was studied for application to thin film transistors on plastic substrates for flexible AMOLEDs. The substrate temperature initially held at room temperature, and was controlled successfully below 150°C during the entire deposition process. Amorphous silicon films having good adhesion, good surface morphology and sufficiently low content of atomic hydrogen were obtained and could be successfully crystallized using excimer laser without a prior dehydrogenation step. SiNx films showed a good refractive index, a high deposition rate, a moderate breakdown field and a dielectric constant. The Cat-CVD silicon and silicon nitride films can be good candidates for fabricating thin films transistors on plastic substrates to drive active-matrix organic light emitting display.",
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Hong, WS, Lee, SH, Cho, CL, Lee, KE, Kim, SB, Kim, J, Kwon, J-Y & Noguchi, T 2006, 'Low temperature processes of poly-Si TFT backplane for flexible AM-OLEDs', Proceedings of International Meeting on Information Display, vol. 1, pp. 785-789.

Low temperature processes of poly-Si TFT backplane for flexible AM-OLEDs. / Hong, Wan Shick; Lee, Sung Hyun; Cho, Chul Lae; Lee, Kyung Eun; Kim, Sae Bum; Kim, Jongman; Kwon, Jang-Yeon; Noguchi, Takashi.

In: Proceedings of International Meeting on Information Display, Vol. 1, 01.12.2006, p. 785-789.

Research output: Contribution to journalConference article

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T1 - Low temperature processes of poly-Si TFT backplane for flexible AM-OLEDs

AU - Hong, Wan Shick

AU - Lee, Sung Hyun

AU - Cho, Chul Lae

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AU - Kim, Sae Bum

AU - Kim, Jongman

AU - Kwon, Jang-Yeon

AU - Noguchi, Takashi

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N2 - Low temperature deposition of silicon and silicon nitride films by catalytic CVD technique was studied for application to thin film transistors on plastic substrates for flexible AMOLEDs. The substrate temperature initially held at room temperature, and was controlled successfully below 150°C during the entire deposition process. Amorphous silicon films having good adhesion, good surface morphology and sufficiently low content of atomic hydrogen were obtained and could be successfully crystallized using excimer laser without a prior dehydrogenation step. SiNx films showed a good refractive index, a high deposition rate, a moderate breakdown field and a dielectric constant. The Cat-CVD silicon and silicon nitride films can be good candidates for fabricating thin films transistors on plastic substrates to drive active-matrix organic light emitting display.

AB - Low temperature deposition of silicon and silicon nitride films by catalytic CVD technique was studied for application to thin film transistors on plastic substrates for flexible AMOLEDs. The substrate temperature initially held at room temperature, and was controlled successfully below 150°C during the entire deposition process. Amorphous silicon films having good adhesion, good surface morphology and sufficiently low content of atomic hydrogen were obtained and could be successfully crystallized using excimer laser without a prior dehydrogenation step. SiNx films showed a good refractive index, a high deposition rate, a moderate breakdown field and a dielectric constant. The Cat-CVD silicon and silicon nitride films can be good candidates for fabricating thin films transistors on plastic substrates to drive active-matrix organic light emitting display.

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