Low-temperature reactions at metal-semiconductor interfaces

R. Sinclair, T. Konno, D. H. Ko, S. Ogawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)


In this article we consider the interfacial reactions which occur at several metal-semiconductor interfaces. When there is a large free energy of mixing, amorphous phase formation can precede crystal phase nucleation, and this is illustrated by Ti-Si and Pt-GaAs contacts. On the other hand, for a phase separating system (Al-Si), amorphization is not observed, but instead low-temperature (approximately 180°C) silicon crystallization is confirmed.

Original languageEnglish
Title of host publicationInstitute of Physics Conference Series
PublisherPubl by Inst of Physics Publ Ltd
Number of pages5
ISBN (Print)0854984062
Publication statusPublished - 1991 Dec 1
EventProceedings of the Conference on Microscopy of Semiconducting Materials 1991 - Oxford, Engl
Duration: 1991 Mar 251991 Mar 28

Publication series

NameInstitute of Physics Conference Series
ISSN (Print)0373-0751


OtherProceedings of the Conference on Microscopy of Semiconducting Materials 1991
CityOxford, Engl

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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  • Cite this

    Sinclair, R., Konno, T., Ko, D. H., & Ogawa, S. (1991). Low-temperature reactions at metal-semiconductor interfaces. In Institute of Physics Conference Series (117 ed., pp. 283-287). (Institute of Physics Conference Series; No. 117). Publ by Inst of Physics Publ Ltd.