Low-temperature reactions at metal-semiconductor interfaces

R. Sinclair, T. Konno, D. H. Ko, S. Ogawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this article we consider the interfacial reactions which occur at several metal-semiconductor interfaces. When there is a large free energy of mixing, amorphous phase formation can precede crystal phase nucleation, and this is illustrated by Ti-Si and Pt-GaAs contacts. On the other hand, for a phase separating system (Al-Si), amorphization is not observed, but instead low-temperature (approximately 180°C) silicon crystallization is confirmed.

Original languageEnglish
Title of host publicationInstitute of Physics Conference Series
PublisherPubl by Inst of Physics Publ Ltd
Pages283-287
Number of pages5
Edition117
ISBN (Print)0854984062
Publication statusPublished - 1991 Dec 1
EventProceedings of the Conference on Microscopy of Semiconducting Materials 1991 - Oxford, Engl
Duration: 1991 Mar 251991 Mar 28

Publication series

NameInstitute of Physics Conference Series
Number117
ISSN (Print)0373-0751

Other

OtherProceedings of the Conference on Microscopy of Semiconducting Materials 1991
CityOxford, Engl
Period91/3/2591/3/28

Fingerprint

free energy
nucleation
crystallization
silicon
metals
crystals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Sinclair, R., Konno, T., Ko, D. H., & Ogawa, S. (1991). Low-temperature reactions at metal-semiconductor interfaces. In Institute of Physics Conference Series (117 ed., pp. 283-287). (Institute of Physics Conference Series; No. 117). Publ by Inst of Physics Publ Ltd.
Sinclair, R. ; Konno, T. ; Ko, D. H. ; Ogawa, S. / Low-temperature reactions at metal-semiconductor interfaces. Institute of Physics Conference Series. 117. ed. Publ by Inst of Physics Publ Ltd, 1991. pp. 283-287 (Institute of Physics Conference Series; 117).
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Sinclair, R, Konno, T, Ko, DH & Ogawa, S 1991, Low-temperature reactions at metal-semiconductor interfaces. in Institute of Physics Conference Series. 117 edn, Institute of Physics Conference Series, no. 117, Publ by Inst of Physics Publ Ltd, pp. 283-287, Proceedings of the Conference on Microscopy of Semiconducting Materials 1991, Oxford, Engl, 91/3/25.

Low-temperature reactions at metal-semiconductor interfaces. / Sinclair, R.; Konno, T.; Ko, D. H.; Ogawa, S.

Institute of Physics Conference Series. 117. ed. Publ by Inst of Physics Publ Ltd, 1991. p. 283-287 (Institute of Physics Conference Series; No. 117).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Sinclair R, Konno T, Ko DH, Ogawa S. Low-temperature reactions at metal-semiconductor interfaces. In Institute of Physics Conference Series. 117 ed. Publ by Inst of Physics Publ Ltd. 1991. p. 283-287. (Institute of Physics Conference Series; 117).