Low-temperature solution-deposited oxide thin-film transistors based on solution-processed organic-inorganic hybrid dielectrics

Keunkyu Song, Youngmin Jeong, Taewhan Jun, Chang Young Koo, Dongjo Kim, Kyoohee Woo, Areum Kim, Junghun Noh, Seongwhan Cho, Jooho Moon

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We describe low-temperature, solution-deposited, oxide semiconductor thin-film transistors (TFTs) with a solution-processed gate dielectric in this study. The sol-gel-derived indium zinc oxide (IZO) semiconductor matched well with the organic-inorganic hybrid dielectric annealed at 200 °C, forming a coherent interface between the semiconductor and the dielectric without evidence of chemical damage. The IZO-TFTs made with a 420-nm-thick hybrid dielectric layer showed good performance: a low off-current on the order of <10 -10 A, a field-effect mobility of 3:3 × 10-2 cm 2 V-1 s-1, and a low threshold gate voltage of ̃2:4 V. Spin-coating of the IZO semiconductor on a hybrid dielectric/glass substrate results in TFTs optically transparent in the entire visible region (̃90%). Our solution-processable materials of the semiconductor and the gate dielectric can open the possibility of realizing flexible transparent devices using all-solution processing.

Original languageEnglish
Pages (from-to)05EB021-05EB024
JournalJapanese Journal of Applied Physics
Issue number5 PART 2
Publication statusPublished - 2010 May 1


All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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