TY - JOUR
T1 - Low-temperature solution-deposited oxide thin-film transistors based on solution-processed organic-inorganic hybrid dielectrics
AU - Song, Keunkyu
AU - Jeong, Youngmin
AU - Jun, Taewhan
AU - Koo, Chang Young
AU - Kim, Dongjo
AU - Woo, Kyoohee
AU - Kim, Areum
AU - Noh, Junghun
AU - Cho, Seongwhan
AU - Moon, Jooho
PY - 2010/5
Y1 - 2010/5
N2 - We describe low-temperature, solution-deposited, oxide semiconductor thin-film transistors (TFTs) with a solution-processed gate dielectric in this study. The sol-gel-derived indium zinc oxide (IZO) semiconductor matched well with the organic-inorganic hybrid dielectric annealed at 200 °C, forming a coherent interface between the semiconductor and the dielectric without evidence of chemical damage. The IZO-TFTs made with a 420-nm-thick hybrid dielectric layer showed good performance: a low off-current on the order of <10 -10 A, a field-effect mobility of 3:3 × 10-2 cm 2 V-1 s-1, and a low threshold gate voltage of ̃2:4 V. Spin-coating of the IZO semiconductor on a hybrid dielectric/glass substrate results in TFTs optically transparent in the entire visible region (̃90%). Our solution-processable materials of the semiconductor and the gate dielectric can open the possibility of realizing flexible transparent devices using all-solution processing.
AB - We describe low-temperature, solution-deposited, oxide semiconductor thin-film transistors (TFTs) with a solution-processed gate dielectric in this study. The sol-gel-derived indium zinc oxide (IZO) semiconductor matched well with the organic-inorganic hybrid dielectric annealed at 200 °C, forming a coherent interface between the semiconductor and the dielectric without evidence of chemical damage. The IZO-TFTs made with a 420-nm-thick hybrid dielectric layer showed good performance: a low off-current on the order of <10 -10 A, a field-effect mobility of 3:3 × 10-2 cm 2 V-1 s-1, and a low threshold gate voltage of ̃2:4 V. Spin-coating of the IZO semiconductor on a hybrid dielectric/glass substrate results in TFTs optically transparent in the entire visible region (̃90%). Our solution-processable materials of the semiconductor and the gate dielectric can open the possibility of realizing flexible transparent devices using all-solution processing.
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U2 - 10.1143/JJAP.49.05EB02
DO - 10.1143/JJAP.49.05EB02
M3 - Article
AN - SCOPUS:77952991479
VL - 49
SP - 05EB021-05EB024
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - 5 PART 2
ER -