Low-temperature solution-deposited oxide thin-film transistors based on solution-processed organic-inorganic hybrid dielectrics

We describe low-temperature, solution-deposited, oxide semiconductor thin-film transistors (TFTs) with a solution-processed gate dielectric in this study. The sol-gel-derived indium zinc oxide (IZO) semiconductor matched well with the organic-inorganic hybrid dielectric annealed at 200 °C, forming a coherent interface between the semiconductor and the dielectric without evidence of chemical damage. The IZO-TFTs made with a 420-nm-thick hybrid dielectric layer showed good performance: a low off-current on the order of <10 ^-10 A, a field-effect mobility of 3:3 × 10^-2 cm ² V^-1 s^-1, and a low threshold gate voltage of ̃2:4 V. Spin-coating of the IZO semiconductor on a hybrid dielectric/glass substrate results in TFTs optically transparent in the entire visible region (̃90%). Our solution-processable materials of the semiconductor and the gate dielectric can open the possibility of realizing flexible transparent devices using all-solution processing.