We describe low-temperature, solution-deposited, oxide semiconductor thin-film transistors (TFTs) with a solution-processed gate dielectric in this study. The sol-gel-derived indium zinc oxide (IZO) semiconductor matched well with the organic-inorganic hybrid dielectric annealed at 200 °C, forming a coherent interface between the semiconductor and the dielectric without evidence of chemical damage. The IZO-TFTs made with a 420-nm-thick hybrid dielectric layer showed good performance: a low off-current on the order of <10 -10 A, a field-effect mobility of 3:3 × 10-2 cm 2 V-1 s-1, and a low threshold gate voltage of ̃2:4 V. Spin-coating of the IZO semiconductor on a hybrid dielectric/glass substrate results in TFTs optically transparent in the entire visible region (̃90%). Our solution-processable materials of the semiconductor and the gate dielectric can open the possibility of realizing flexible transparent devices using all-solution processing.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)