Low-temperature solution process for oxide TFT

Woong Hee Jeong, Dong Lim Kim, Hyun Jae Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The importance of the low-temperature solution process for oxide thin-film transistor (TFT) is growing as the demand on the ultra-large and flexible display is increased. Among diverse approaches for the low-temperature solution process, the formation of dual active layer and utilization of nitrate precursor are proposed in this paper. From electrical and structural analyses, the two proposed approaches proved their competence as effective solutions to achieve high performance TFT in low-temperature annealing below 350°C.

Original languageEnglish
Title of host publicationProceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
Pages301-304
Number of pages4
Publication statusPublished - 2012 Oct 31
Event19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 - Kyoto, Japan
Duration: 2012 Jul 42012 Jul 6

Publication series

NameProceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012

Other

Other19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
CountryJapan
CityKyoto
Period12/7/412/7/6

Fingerprint

Thin film transistors
Oxide films
Flexible displays
Temperature
Nitrates
Annealing

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Jeong, W. H., Kim, D. L., & Kim, H. J. (2012). Low-temperature solution process for oxide TFT. In Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012 (pp. 301-304). [6294910] (Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012).
Jeong, Woong Hee ; Kim, Dong Lim ; Kim, Hyun Jae. / Low-temperature solution process for oxide TFT. Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012. 2012. pp. 301-304 (Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012).
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title = "Low-temperature solution process for oxide TFT",
abstract = "The importance of the low-temperature solution process for oxide thin-film transistor (TFT) is growing as the demand on the ultra-large and flexible display is increased. Among diverse approaches for the low-temperature solution process, the formation of dual active layer and utilization of nitrate precursor are proposed in this paper. From electrical and structural analyses, the two proposed approaches proved their competence as effective solutions to achieve high performance TFT in low-temperature annealing below 350°C.",
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year = "2012",
month = "10",
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language = "English",
isbn = "9781467303996",
series = "Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012",
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Jeong, WH, Kim, DL & Kim, HJ 2012, Low-temperature solution process for oxide TFT. in Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012., 6294910, Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012, pp. 301-304, 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012, Kyoto, Japan, 12/7/4.

Low-temperature solution process for oxide TFT. / Jeong, Woong Hee; Kim, Dong Lim; Kim, Hyun Jae.

Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012. 2012. p. 301-304 6294910 (Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - Low-temperature solution process for oxide TFT

AU - Jeong, Woong Hee

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AB - The importance of the low-temperature solution process for oxide thin-film transistor (TFT) is growing as the demand on the ultra-large and flexible display is increased. Among diverse approaches for the low-temperature solution process, the formation of dual active layer and utilization of nitrate precursor are proposed in this paper. From electrical and structural analyses, the two proposed approaches proved their competence as effective solutions to achieve high performance TFT in low-temperature annealing below 350°C.

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Jeong WH, Kim DL, Kim HJ. Low-temperature solution process for oxide TFT. In Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012. 2012. p. 301-304. 6294910. (Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012).