TY - GEN
T1 - Low-temperature solution process for oxide TFT
AU - Jeong, Woong Hee
AU - Kim, Dong Lim
AU - Kim, Hyun Jae
PY - 2012
Y1 - 2012
N2 - The importance of the low-temperature solution process for oxide thin-film transistor (TFT) is growing as the demand on the ultra-large and flexible display is increased. Among diverse approaches for the low-temperature solution process, the formation of dual active layer and utilization of nitrate precursor are proposed in this paper. From electrical and structural analyses, the two proposed approaches proved their competence as effective solutions to achieve high performance TFT in low-temperature annealing below 350°C.
AB - The importance of the low-temperature solution process for oxide thin-film transistor (TFT) is growing as the demand on the ultra-large and flexible display is increased. Among diverse approaches for the low-temperature solution process, the formation of dual active layer and utilization of nitrate precursor are proposed in this paper. From electrical and structural analyses, the two proposed approaches proved their competence as effective solutions to achieve high performance TFT in low-temperature annealing below 350°C.
UR - http://www.scopus.com/inward/record.url?scp=84867908495&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84867908495&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84867908495
SN - 9781467303996
T3 - Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
SP - 301
EP - 304
BT - Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
T2 - 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012
Y2 - 4 July 2012 through 6 July 2012
ER -