Low-temperature, solution-processed and alkali metal doped zno for high-performance thin-film transistors

Si Yun Park, Beom Joon Kim, Kyongjun Kim, Moon Sung Kang, Keon Hee Lim, Tae Il Lee, Jae M. Myoung, Hong Koo Baik, Jeong Ho Cho, Youn Sang Kim

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171 Citations (Scopus)


Transfer characteristics of ZnO thin-film transistors (TFTs) based on ZnO doped with various alkali metals. A new doping method is demonstrated by employing alkali metals to achieve high-performance and solution-processed ZnO TFTs with a low processing temperature (μ300 °C), which is applicable to flexible plastic substrates.

Original languageEnglish
Pages (from-to)834-838
Number of pages5
JournalAdvanced Materials
Issue number6
Publication statusPublished - 2012 Feb 7


All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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