We prepared indium zinc oxide (IZO) semiconductors for low temperature solution-processed thin-film transistors (TFTs). The sol-gel derived IZO films, annealed at 300°C, are uniform and have smooth surface morphology (root-mean-square roughness of 0.27 nm). Both the composition and the film thickness need to be optimized for high performance TFTs. With the composition of In/Zn equal to 50/50 in mol percent, the IZO TFTs with a thickness of 10 nm exhibited the best performance for a clear switching behavior (on/off current ratio of 1.2× 107) and output characteristics (drain current of 3.7× 10-4 A), with a relatively high field-effect mobility (0.54 cm 2 V-1 s-1) and a low threshold voltage (1.9 V). The nonpassivated IZO-TFT stably operates over a two-month period without any significant change in the on/off current ratio and the mobility.
|Journal||Journal of the Electrochemical Society|
|Publication status||Published - 2010|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry