Low temperature solution-processed InZnO thin-film transistors

Chang Young Koo; Keunkyu Song; Taehwan Jun; Dongjo Kim; Youngmin Jeong; Seung Hyun Kim; Jowoong Ha; Jooho Moon

doi:10.1149/1.3298886

Low temperature solution-processed InZnO thin-film transistors

Chang Young Koo, Keunkyu Song, Taehwan Jun, Dongjo Kim, Youngmin Jeong, Seung Hyun Kim, Jowoong Ha, Jooho Moon

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

90 Citations (Scopus)

Abstract

We prepared indium zinc oxide (IZO) semiconductors for low temperature solution-processed thin-film transistors (TFTs). The sol-gel derived IZO films, annealed at 300°C, are uniform and have smooth surface morphology (root-mean-square roughness of 0.27 nm). Both the composition and the film thickness need to be optimized for high performance TFTs. With the composition of In/Zn equal to 50/50 in mol percent, the IZO TFTs with a thickness of 10 nm exhibited the best performance for a clear switching behavior (on/off current ratio of 1.2× 10⁷) and output characteristics (drain current of 3.7× 10-4 A), with a relatively high field-effect mobility (0.54 cm ² V-1 s-1) and a low threshold voltage (1.9 V). The nonpassivated IZO-TFT stably operates over a two-month period without any significant change in the on/off current ratio and the mobility.

Original language	English
Pages (from-to)	J111-J115
Journal	Journal of the Electrochemical Society
Volume	157
Issue number	4
DOIs	https://doi.org/10.1149/1.3298886
Publication status	Published - 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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10.1149/1.3298886

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title = "Low temperature solution-processed InZnO thin-film transistors",

abstract = "We prepared indium zinc oxide (IZO) semiconductors for low temperature solution-processed thin-film transistors (TFTs). The sol-gel derived IZO films, annealed at 300°C, are uniform and have smooth surface morphology (root-mean-square roughness of 0.27 nm). Both the composition and the film thickness need to be optimized for high performance TFTs. With the composition of In/Zn equal to 50/50 in mol percent, the IZO TFTs with a thickness of 10 nm exhibited the best performance for a clear switching behavior (on/off current ratio of 1.2× 107) and output characteristics (drain current of 3.7× 10-4 A), with a relatively high field-effect mobility (0.54 cm 2 V-1 s-1) and a low threshold voltage (1.9 V). The nonpassivated IZO-TFT stably operates over a two-month period without any significant change in the on/off current ratio and the mobility.",

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T1 - Low temperature solution-processed InZnO thin-film transistors

AU - Koo, Chang Young

AU - Song, Keunkyu

AU - Jun, Taehwan

AU - Kim, Dongjo

AU - Jeong, Youngmin

AU - Kim, Seung Hyun

AU - Ha, Jowoong

AU - Moon, Jooho

PY - 2010

Y1 - 2010

N2 - We prepared indium zinc oxide (IZO) semiconductors for low temperature solution-processed thin-film transistors (TFTs). The sol-gel derived IZO films, annealed at 300°C, are uniform and have smooth surface morphology (root-mean-square roughness of 0.27 nm). Both the composition and the film thickness need to be optimized for high performance TFTs. With the composition of In/Zn equal to 50/50 in mol percent, the IZO TFTs with a thickness of 10 nm exhibited the best performance for a clear switching behavior (on/off current ratio of 1.2× 107) and output characteristics (drain current of 3.7× 10-4 A), with a relatively high field-effect mobility (0.54 cm 2 V-1 s-1) and a low threshold voltage (1.9 V). The nonpassivated IZO-TFT stably operates over a two-month period without any significant change in the on/off current ratio and the mobility.

AB - We prepared indium zinc oxide (IZO) semiconductors for low temperature solution-processed thin-film transistors (TFTs). The sol-gel derived IZO films, annealed at 300°C, are uniform and have smooth surface morphology (root-mean-square roughness of 0.27 nm). Both the composition and the film thickness need to be optimized for high performance TFTs. With the composition of In/Zn equal to 50/50 in mol percent, the IZO TFTs with a thickness of 10 nm exhibited the best performance for a clear switching behavior (on/off current ratio of 1.2× 107) and output characteristics (drain current of 3.7× 10-4 A), with a relatively high field-effect mobility (0.54 cm 2 V-1 s-1) and a low threshold voltage (1.9 V). The nonpassivated IZO-TFT stably operates over a two-month period without any significant change in the on/off current ratio and the mobility.

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Low temperature solution-processed InZnO thin-film transistors

Abstract

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