Low temperature solution-processed InZnO thin-film transistors

Chang Young Koo, Keunkyu Song, Taehwan Jun, Dongjo Kim, Youngmin Jeong, Seung Hyun Kim, Jowoong Ha, Joo Ho Moon

Research output: Contribution to journalArticle

75 Citations (Scopus)

Abstract

We prepared indium zinc oxide (IZO) semiconductors for low temperature solution-processed thin-film transistors (TFTs). The sol-gel derived IZO films, annealed at 300°C, are uniform and have smooth surface morphology (root-mean-square roughness of 0.27 nm). Both the composition and the film thickness need to be optimized for high performance TFTs. With the composition of In/Zn equal to 50/50 in mol percent, the IZO TFTs with a thickness of 10 nm exhibited the best performance for a clear switching behavior (on/off current ratio of 1.2× 107) and output characteristics (drain current of 3.7× 10-4 A), with a relatively high field-effect mobility (0.54 cm 2 V-1 s-1) and a low threshold voltage (1.9 V). The nonpassivated IZO-TFT stably operates over a two-month period without any significant change in the on/off current ratio and the mobility.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume157
Issue number4
DOIs
Publication statusPublished - 2010 Mar 26

Fingerprint

Zinc Oxide
Indium
Thin film transistors
Zinc oxide
Oxide films
Temperature
Drain current
Chemical analysis
Threshold voltage
Sol-gels
Surface morphology
Film thickness
Surface roughness

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Koo, Chang Young ; Song, Keunkyu ; Jun, Taehwan ; Kim, Dongjo ; Jeong, Youngmin ; Kim, Seung Hyun ; Ha, Jowoong ; Moon, Joo Ho. / Low temperature solution-processed InZnO thin-film transistors. In: Journal of the Electrochemical Society. 2010 ; Vol. 157, No. 4.
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abstract = "We prepared indium zinc oxide (IZO) semiconductors for low temperature solution-processed thin-film transistors (TFTs). The sol-gel derived IZO films, annealed at 300°C, are uniform and have smooth surface morphology (root-mean-square roughness of 0.27 nm). Both the composition and the film thickness need to be optimized for high performance TFTs. With the composition of In/Zn equal to 50/50 in mol percent, the IZO TFTs with a thickness of 10 nm exhibited the best performance for a clear switching behavior (on/off current ratio of 1.2× 107) and output characteristics (drain current of 3.7× 10-4 A), with a relatively high field-effect mobility (0.54 cm 2 V-1 s-1) and a low threshold voltage (1.9 V). The nonpassivated IZO-TFT stably operates over a two-month period without any significant change in the on/off current ratio and the mobility.",
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Low temperature solution-processed InZnO thin-film transistors. / Koo, Chang Young; Song, Keunkyu; Jun, Taehwan; Kim, Dongjo; Jeong, Youngmin; Kim, Seung Hyun; Ha, Jowoong; Moon, Joo Ho.

In: Journal of the Electrochemical Society, Vol. 157, No. 4, 26.03.2010.

Research output: Contribution to journalArticle

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T1 - Low temperature solution-processed InZnO thin-film transistors

AU - Koo, Chang Young

AU - Song, Keunkyu

AU - Jun, Taehwan

AU - Kim, Dongjo

AU - Jeong, Youngmin

AU - Kim, Seung Hyun

AU - Ha, Jowoong

AU - Moon, Joo Ho

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N2 - We prepared indium zinc oxide (IZO) semiconductors for low temperature solution-processed thin-film transistors (TFTs). The sol-gel derived IZO films, annealed at 300°C, are uniform and have smooth surface morphology (root-mean-square roughness of 0.27 nm). Both the composition and the film thickness need to be optimized for high performance TFTs. With the composition of In/Zn equal to 50/50 in mol percent, the IZO TFTs with a thickness of 10 nm exhibited the best performance for a clear switching behavior (on/off current ratio of 1.2× 107) and output characteristics (drain current of 3.7× 10-4 A), with a relatively high field-effect mobility (0.54 cm 2 V-1 s-1) and a low threshold voltage (1.9 V). The nonpassivated IZO-TFT stably operates over a two-month period without any significant change in the on/off current ratio and the mobility.

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