Low-temperature, solution-processed metal oxide thin film transistors

Sunho Jeong, Jooho Moon

Research output: Contribution to journalArticle

165 Citations (Scopus)

Abstract

High-performance, solution-processable semiconductors have drawn significant attention for use in low-cost, functional electronic applications. Metal oxide semiconductors are the most promising building blocks for high performance electronic devices because of their electrical properties and solution-processability. However, the major impediment for metal oxide semiconductors is that the electrical properties applicable to electronic devices are activated by chemical/physical structural evolution at high temperatures, which critically limits the practical applications. This article reviews the recent progress in the development of high-performance oxide semiconductors processed at low temperatures which are compatible with plastic substrates and discusses the chemical/physical approaches to lower the annealing temperature.

Original languageEnglish
Pages (from-to)1243-1250
Number of pages8
JournalJournal of Materials Chemistry
Volume22
Issue number4
DOIs
Publication statusPublished - 2012 Jan 28

Fingerprint

Thin film transistors
Oxide films
Metals
Electric properties
Temperature
Annealing
Semiconductor materials
Plastics
Substrates
Oxide semiconductors
Costs

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

Cite this

@article{3ad09426ffe74d8daf219159cf67350d,
title = "Low-temperature, solution-processed metal oxide thin film transistors",
abstract = "High-performance, solution-processable semiconductors have drawn significant attention for use in low-cost, functional electronic applications. Metal oxide semiconductors are the most promising building blocks for high performance electronic devices because of their electrical properties and solution-processability. However, the major impediment for metal oxide semiconductors is that the electrical properties applicable to electronic devices are activated by chemical/physical structural evolution at high temperatures, which critically limits the practical applications. This article reviews the recent progress in the development of high-performance oxide semiconductors processed at low temperatures which are compatible with plastic substrates and discusses the chemical/physical approaches to lower the annealing temperature.",
author = "Sunho Jeong and Jooho Moon",
year = "2012",
month = "1",
day = "28",
doi = "10.1039/c1jm14452a",
language = "English",
volume = "22",
pages = "1243--1250",
journal = "Journal of Materials Chemistry",
issn = "0959-9428",
publisher = "Royal Society of Chemistry",
number = "4",

}

Low-temperature, solution-processed metal oxide thin film transistors. / Jeong, Sunho; Moon, Jooho.

In: Journal of Materials Chemistry, Vol. 22, No. 4, 28.01.2012, p. 1243-1250.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Low-temperature, solution-processed metal oxide thin film transistors

AU - Jeong, Sunho

AU - Moon, Jooho

PY - 2012/1/28

Y1 - 2012/1/28

N2 - High-performance, solution-processable semiconductors have drawn significant attention for use in low-cost, functional electronic applications. Metal oxide semiconductors are the most promising building blocks for high performance electronic devices because of their electrical properties and solution-processability. However, the major impediment for metal oxide semiconductors is that the electrical properties applicable to electronic devices are activated by chemical/physical structural evolution at high temperatures, which critically limits the practical applications. This article reviews the recent progress in the development of high-performance oxide semiconductors processed at low temperatures which are compatible with plastic substrates and discusses the chemical/physical approaches to lower the annealing temperature.

AB - High-performance, solution-processable semiconductors have drawn significant attention for use in low-cost, functional electronic applications. Metal oxide semiconductors are the most promising building blocks for high performance electronic devices because of their electrical properties and solution-processability. However, the major impediment for metal oxide semiconductors is that the electrical properties applicable to electronic devices are activated by chemical/physical structural evolution at high temperatures, which critically limits the practical applications. This article reviews the recent progress in the development of high-performance oxide semiconductors processed at low temperatures which are compatible with plastic substrates and discusses the chemical/physical approaches to lower the annealing temperature.

UR - http://www.scopus.com/inward/record.url?scp=84855374166&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84855374166&partnerID=8YFLogxK

U2 - 10.1039/c1jm14452a

DO - 10.1039/c1jm14452a

M3 - Article

AN - SCOPUS:84855374166

VL - 22

SP - 1243

EP - 1250

JO - Journal of Materials Chemistry

JF - Journal of Materials Chemistry

SN - 0959-9428

IS - 4

ER -