Low-temperature, solution-processed zinc tin oxide thin-film transistors fabricated by thermal annealing and microwave irradiation

Young Bum Yoo, Jee Ho Park, Se Jong Lee, Kie Moon Song, Hong Koo Baik

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

In this study, we fabricated zinc tin oxide (ZTO) thin-film transistors (TFTs) using a sol-gel solution at a low annealing temperature of 350 °C. We found that the combination of conventional hot plate annealing and microwave irradiation was effective for achieving high performance of ZTOTFTs. Solution-processed ZTO-TFTs prepared at 350 °C by microwave irradiation showed enhanced device characteristics of 1.84 cm 2 V -1 s -1 mobility and a 10 6 on/off current ratio. X-ray photoelectron spectroscopy analyses confirmed that residual hydroxyls in solution-processed ZTO films can be decomposed at low temperatures by microwave irradiation. Low-temperature microwave-assisted processing makes ZTO TFTs promising for use in flexible, transparent electronics.

Original languageEnglish
Article number040201
JournalJapanese Journal of Applied Physics
Volume51
Issue number4 PART 1
DOIs
Publication statusPublished - 2012 Apr 1

Fingerprint

Microwave irradiation
Thin film transistors
Zinc oxide
Tin oxides
zinc oxides
tin oxides
Oxide films
transistors
Annealing
microwaves
irradiation
annealing
thin films
Temperature
Sol-gels
oxide films
Electronic equipment
X ray photoelectron spectroscopy
Microwaves
photoelectron spectroscopy

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

@article{234594339c0c42dcb22e4c3df381fcc2,
title = "Low-temperature, solution-processed zinc tin oxide thin-film transistors fabricated by thermal annealing and microwave irradiation",
abstract = "In this study, we fabricated zinc tin oxide (ZTO) thin-film transistors (TFTs) using a sol-gel solution at a low annealing temperature of 350 °C. We found that the combination of conventional hot plate annealing and microwave irradiation was effective for achieving high performance of ZTOTFTs. Solution-processed ZTO-TFTs prepared at 350 °C by microwave irradiation showed enhanced device characteristics of 1.84 cm 2 V -1 s -1 mobility and a 10 6 on/off current ratio. X-ray photoelectron spectroscopy analyses confirmed that residual hydroxyls in solution-processed ZTO films can be decomposed at low temperatures by microwave irradiation. Low-temperature microwave-assisted processing makes ZTO TFTs promising for use in flexible, transparent electronics.",
author = "Yoo, {Young Bum} and Park, {Jee Ho} and Lee, {Se Jong} and Song, {Kie Moon} and Baik, {Hong Koo}",
year = "2012",
month = "4",
day = "1",
doi = "10.1143/JJAP.51.040201",
language = "English",
volume = "51",
journal = "Japanese Journal of Applied Physics",
issn = "0021-4922",
number = "4 PART 1",

}

Low-temperature, solution-processed zinc tin oxide thin-film transistors fabricated by thermal annealing and microwave irradiation. / Yoo, Young Bum; Park, Jee Ho; Lee, Se Jong; Song, Kie Moon; Baik, Hong Koo.

In: Japanese Journal of Applied Physics, Vol. 51, No. 4 PART 1, 040201, 01.04.2012.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Low-temperature, solution-processed zinc tin oxide thin-film transistors fabricated by thermal annealing and microwave irradiation

AU - Yoo, Young Bum

AU - Park, Jee Ho

AU - Lee, Se Jong

AU - Song, Kie Moon

AU - Baik, Hong Koo

PY - 2012/4/1

Y1 - 2012/4/1

N2 - In this study, we fabricated zinc tin oxide (ZTO) thin-film transistors (TFTs) using a sol-gel solution at a low annealing temperature of 350 °C. We found that the combination of conventional hot plate annealing and microwave irradiation was effective for achieving high performance of ZTOTFTs. Solution-processed ZTO-TFTs prepared at 350 °C by microwave irradiation showed enhanced device characteristics of 1.84 cm 2 V -1 s -1 mobility and a 10 6 on/off current ratio. X-ray photoelectron spectroscopy analyses confirmed that residual hydroxyls in solution-processed ZTO films can be decomposed at low temperatures by microwave irradiation. Low-temperature microwave-assisted processing makes ZTO TFTs promising for use in flexible, transparent electronics.

AB - In this study, we fabricated zinc tin oxide (ZTO) thin-film transistors (TFTs) using a sol-gel solution at a low annealing temperature of 350 °C. We found that the combination of conventional hot plate annealing and microwave irradiation was effective for achieving high performance of ZTOTFTs. Solution-processed ZTO-TFTs prepared at 350 °C by microwave irradiation showed enhanced device characteristics of 1.84 cm 2 V -1 s -1 mobility and a 10 6 on/off current ratio. X-ray photoelectron spectroscopy analyses confirmed that residual hydroxyls in solution-processed ZTO films can be decomposed at low temperatures by microwave irradiation. Low-temperature microwave-assisted processing makes ZTO TFTs promising for use in flexible, transparent electronics.

UR - http://www.scopus.com/inward/record.url?scp=84860461648&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84860461648&partnerID=8YFLogxK

U2 - 10.1143/JJAP.51.040201

DO - 10.1143/JJAP.51.040201

M3 - Article

AN - SCOPUS:84860461648

VL - 51

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 4 PART 1

M1 - 040201

ER -