Low-temperature, solution-processed zinc tin oxide thin-film transistors fabricated by thermal annealing and microwave irradiation

Young Bum Yoo, Jee Ho Park, Se Jong Lee, Kie Moon Song, Hong Koo Baik

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19 Citations (Scopus)


In this study, we fabricated zinc tin oxide (ZTO) thin-film transistors (TFTs) using a sol-gel solution at a low annealing temperature of 350 °C. We found that the combination of conventional hot plate annealing and microwave irradiation was effective for achieving high performance of ZTOTFTs. Solution-processed ZTO-TFTs prepared at 350 °C by microwave irradiation showed enhanced device characteristics of 1.84 cm 2 V -1 s -1 mobility and a 10 6 on/off current ratio. X-ray photoelectron spectroscopy analyses confirmed that residual hydroxyls in solution-processed ZTO films can be decomposed at low temperatures by microwave irradiation. Low-temperature microwave-assisted processing makes ZTO TFTs promising for use in flexible, transparent electronics.

Original languageEnglish
Article number040201
JournalJapanese journal of applied physics
Issue number4 PART 1
Publication statusPublished - 2012 Apr 1


All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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