In this study, we fabricated zinc tin oxide (ZTO) thin-film transistors (TFTs) using a sol-gel solution at a low annealing temperature of 350 °C. We found that the combination of conventional hot plate annealing and microwave irradiation was effective for achieving high performance of ZTOTFTs. Solution-processed ZTO-TFTs prepared at 350 °C by microwave irradiation showed enhanced device characteristics of 1.84 cm 2 V -1 s -1 mobility and a 10 6 on/off current ratio. X-ray photoelectron spectroscopy analyses confirmed that residual hydroxyls in solution-processed ZTO films can be decomposed at low temperatures by microwave irradiation. Low-temperature microwave-assisted processing makes ZTO TFTs promising for use in flexible, transparent electronics.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)