@inproceedings{972a4aff91a64b17bfbdd132ab2a96ad,
title = "Low temperature solution-processed zinc tin oxide thin film transistor with O2 plasma treatment",
abstract = "We fabricated solution-processed ZTO TFTs at annealing temperature of 350 °C with employing O2 plasma treatment on active layer in order to improve the electrical characteristics of ZTO TFTs fabricated at low temperature. Threshold voltage of solution-processed ZTO TFTs without plasma treatment was larger than 35 V but reduced to 20.74 V with 15 ml/min and 300 W of O2 plasma treatment since oxygen vacancies in ZnO·SnO 2 and SnO2 would increase and then electron concentration are also increased by ion bombardment from O2 plasma treatment. Saturation mobility and Subthreshold Swing (S.S) of TFTs without plasma treatment was 0.09 cm2/V·sec and 1.65 V/decade respectively, but saturation mobility increased to 0.58 cm2/V·sec and S.S decreased to 1.20 V/decade, respectively, with 15 ml/min and 300 W of O 2 plasma treatment, since ZnO·SnO2 is produced which could work as semiconducting material, rather Zn(OH)Cl is vanished which could work as impurity by O2 plasma treatment.",
author = "Lee, {Jeong Soo} and Kim, {Yong Jin} and Lee, {Yong Uk} and Cho, {Seung Hwan} and Kim, {Yong Hoon} and Kwon, {Jang Yeon} and Han, {Min Koo}",
year = "2010",
doi = "10.1149/1.3481248",
language = "English",
isbn = "9781566778244",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "283--288",
booktitle = "Thin Film Transistors 10, TFT 10",
edition = "5",
}