Low temperature solution-processed zinc tin oxide thin film transistor with O2 plasma treatment

Jeong Soo Lee, Yong Jin Kim, Yong Uk Lee, Seung Hwan Cho, Yong Hoon Kim, Jang Yeon Kwon, Min Koo Han

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

We fabricated solution-processed ZTO TFTs at annealing temperature of 350 °C with employing O2 plasma treatment on active layer in order to improve the electrical characteristics of ZTO TFTs fabricated at low temperature. Threshold voltage of solution-processed ZTO TFTs without plasma treatment was larger than 35 V but reduced to 20.74 V with 15 ml/min and 300 W of O2 plasma treatment since oxygen vacancies in ZnO·SnO 2 and SnO2 would increase and then electron concentration are also increased by ion bombardment from O2 plasma treatment. Saturation mobility and Subthreshold Swing (S.S) of TFTs without plasma treatment was 0.09 cm2/V·sec and 1.65 V/decade respectively, but saturation mobility increased to 0.58 cm2/V·sec and S.S decreased to 1.20 V/decade, respectively, with 15 ml/min and 300 W of O 2 plasma treatment, since ZnO·SnO2 is produced which could work as semiconducting material, rather Zn(OH)Cl is vanished which could work as impurity by O2 plasma treatment.

Original languageEnglish
Title of host publicationThin Film Transistors 10, TFT 10
Pages283-288
Number of pages6
Edition5
DOIs
Publication statusPublished - 2010 Dec 1
Event10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 2010 Oct 112010 Oct 15

Publication series

NameECS Transactions
Number5
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1110/10/15

Fingerprint

Thin film transistors
Zinc oxide
Tin oxides
Oxide films
Plasmas
Temperature
Oxygen vacancies
Ion bombardment
Threshold voltage
Annealing
Impurities
Electrons

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Lee, J. S., Kim, Y. J., Lee, Y. U., Cho, S. H., Kim, Y. H., Kwon, J. Y., & Han, M. K. (2010). Low temperature solution-processed zinc tin oxide thin film transistor with O2 plasma treatment. In Thin Film Transistors 10, TFT 10 (5 ed., pp. 283-288). (ECS Transactions; Vol. 33, No. 5). https://doi.org/10.1149/1.3481248
Lee, Jeong Soo ; Kim, Yong Jin ; Lee, Yong Uk ; Cho, Seung Hwan ; Kim, Yong Hoon ; Kwon, Jang Yeon ; Han, Min Koo. / Low temperature solution-processed zinc tin oxide thin film transistor with O2 plasma treatment. Thin Film Transistors 10, TFT 10. 5. ed. 2010. pp. 283-288 (ECS Transactions; 5).
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Lee, JS, Kim, YJ, Lee, YU, Cho, SH, Kim, YH, Kwon, JY & Han, MK 2010, Low temperature solution-processed zinc tin oxide thin film transistor with O2 plasma treatment. in Thin Film Transistors 10, TFT 10. 5 edn, ECS Transactions, no. 5, vol. 33, pp. 283-288, 10th Symposium on Thin Film Transistor Technologies, TFT 10 - 218th ECS Meeting, Las Vegas, NV, United States, 10/10/11. https://doi.org/10.1149/1.3481248

Low temperature solution-processed zinc tin oxide thin film transistor with O2 plasma treatment. / Lee, Jeong Soo; Kim, Yong Jin; Lee, Yong Uk; Cho, Seung Hwan; Kim, Yong Hoon; Kwon, Jang Yeon; Han, Min Koo.

Thin Film Transistors 10, TFT 10. 5. ed. 2010. p. 283-288 (ECS Transactions; Vol. 33, No. 5).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Lee JS, Kim YJ, Lee YU, Cho SH, Kim YH, Kwon JY et al. Low temperature solution-processed zinc tin oxide thin film transistor with O2 plasma treatment. In Thin Film Transistors 10, TFT 10. 5 ed. 2010. p. 283-288. (ECS Transactions; 5). https://doi.org/10.1149/1.3481248