Low-temperature solution-processed ZrO2 gate insulators for thin-film transistors using high-pressure annealing

Si Joon Kim, Doo Hyun Yoon, You Seung Rim, Hyun Jae Kim

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41 Citations (Scopus)


A solution-processed ZrO2 gate insulator was fabricated using high-pressure annealing (HPA). The dehydroxylation process was accelerated and a thin, dense ZrO2 film was formed at a low annealing temperature of 350°C using HPA. This resulted in superior dielectric strength of the ZrO2 films (about 10-9 A/cm2 at 2 MV/cm) for use as gate insulators. A low-temperature solution-processed InZnO thin-film transistor with such a ZrO2 gate insulator had a saturation mobility of 0.10 cm2/V·s and an on/off ratio of 1.17 × 10 4.

Original languageEnglish
Pages (from-to)E35-E37
JournalElectrochemical and Solid-State Letters
Issue number11
Publication statusPublished - 2011

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


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