Low-temperature solution-processed ZrO2 gate insulators for thin-film transistors using high-pressure annealing

Si Joon Kim; Doo Hyun Yoon; You Seung Rim; Hyun Jae Kim

doi:10.1149/2.006111esl

Low-temperature solution-processed ZrO₂ gate insulators for thin-film transistors using high-pressure annealing

Si Joon Kim, Doo Hyun Yoon, You Seung Rim, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

A solution-processed ZrO₂ gate insulator was fabricated using high-pressure annealing (HPA). The dehydroxylation process was accelerated and a thin, dense ZrO₂ film was formed at a low annealing temperature of 350°C using HPA. This resulted in superior dielectric strength of the ZrO₂ films (about 10^-9 A/cm² at 2 MV/cm) for use as gate insulators. A low-temperature solution-processed InZnO thin-film transistor with such a ZrO₂ gate insulator had a saturation mobility of 0.10 cm²/V·s and an on/off ratio of 1.17 × 10 ⁴.

Original language	English
Pages (from-to)	E35-E37
Journal	Electrochemical and Solid-State Letters
Volume	14
Issue number	11
DOIs	https://doi.org/10.1149/2.006111esl
Publication status	Published - 2011

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/2.006111esl

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abstract = "A solution-processed ZrO2 gate insulator was fabricated using high-pressure annealing (HPA). The dehydroxylation process was accelerated and a thin, dense ZrO2 film was formed at a low annealing temperature of 350°C using HPA. This resulted in superior dielectric strength of the ZrO2 films (about 10-9 A/cm2 at 2 MV/cm) for use as gate insulators. A low-temperature solution-processed InZnO thin-film transistor with such a ZrO2 gate insulator had a saturation mobility of 0.10 cm2/V·s and an on/off ratio of 1.17 × 10 4.",

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AU - Kim, Si Joon

AU - Yoon, Doo Hyun

AU - Rim, You Seung

AU - Kim, Hyun Jae

PY - 2011

Y1 - 2011

N2 - A solution-processed ZrO2 gate insulator was fabricated using high-pressure annealing (HPA). The dehydroxylation process was accelerated and a thin, dense ZrO2 film was formed at a low annealing temperature of 350°C using HPA. This resulted in superior dielectric strength of the ZrO2 films (about 10-9 A/cm2 at 2 MV/cm) for use as gate insulators. A low-temperature solution-processed InZnO thin-film transistor with such a ZrO2 gate insulator had a saturation mobility of 0.10 cm2/V·s and an on/off ratio of 1.17 × 10 4.

AB - A solution-processed ZrO2 gate insulator was fabricated using high-pressure annealing (HPA). The dehydroxylation process was accelerated and a thin, dense ZrO2 film was formed at a low annealing temperature of 350°C using HPA. This resulted in superior dielectric strength of the ZrO2 films (about 10-9 A/cm2 at 2 MV/cm) for use as gate insulators. A low-temperature solution-processed InZnO thin-film transistor with such a ZrO2 gate insulator had a saturation mobility of 0.10 cm2/V·s and an on/off ratio of 1.17 × 10 4.

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Low-temperature solution-processed ZrO₂ gate insulators for thin-film transistors using high-pressure annealing

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