Low-temperature solution-processed ZrO2 gate insulators for thin-film transistors using high-pressure annealing

Si Joon Kim, Doo Hyun Yoon, You Seung Rim, Hyun Jae Kim

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

A solution-processed ZrO2 gate insulator was fabricated using high-pressure annealing (HPA). The dehydroxylation process was accelerated and a thin, dense ZrO2 film was formed at a low annealing temperature of 350°C using HPA. This resulted in superior dielectric strength of the ZrO2 films (about 10-9 A/cm2 at 2 MV/cm) for use as gate insulators. A low-temperature solution-processed InZnO thin-film transistor with such a ZrO2 gate insulator had a saturation mobility of 0.10 cm2/V·s and an on/off ratio of 1.17 × 10 4.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume14
Issue number11
DOIs
Publication statusPublished - 2011 Oct 11

Fingerprint

Thin film transistors
transistors
insulators
Annealing
annealing
thin films
Temperature
saturation
temperature

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering
  • Electrochemistry

Cite this

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abstract = "A solution-processed ZrO2 gate insulator was fabricated using high-pressure annealing (HPA). The dehydroxylation process was accelerated and a thin, dense ZrO2 film was formed at a low annealing temperature of 350°C using HPA. This resulted in superior dielectric strength of the ZrO2 films (about 10-9 A/cm2 at 2 MV/cm) for use as gate insulators. A low-temperature solution-processed InZnO thin-film transistor with such a ZrO2 gate insulator had a saturation mobility of 0.10 cm2/V·s and an on/off ratio of 1.17 × 10 4.",
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Low-temperature solution-processed ZrO2 gate insulators for thin-film transistors using high-pressure annealing. / Kim, Si Joon; Yoon, Doo Hyun; Rim, You Seung; Kim, Hyun Jae.

In: Electrochemical and Solid-State Letters, Vol. 14, No. 11, 11.10.2011.

Research output: Contribution to journalArticle

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AU - Kim, Si Joon

AU - Yoon, Doo Hyun

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AB - A solution-processed ZrO2 gate insulator was fabricated using high-pressure annealing (HPA). The dehydroxylation process was accelerated and a thin, dense ZrO2 film was formed at a low annealing temperature of 350°C using HPA. This resulted in superior dielectric strength of the ZrO2 films (about 10-9 A/cm2 at 2 MV/cm) for use as gate insulators. A low-temperature solution-processed InZnO thin-film transistor with such a ZrO2 gate insulator had a saturation mobility of 0.10 cm2/V·s and an on/off ratio of 1.17 × 10 4.

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