Low-temperature solution processing of AlInZnO/InZnO dual-channel thin-film transistors

Kyung Min Kim, Woong Hee Jeong, Dong Lim Kim, You Seung Rim, Yuri Choi, Myung Kwan Ryu, Kyung Bae Park, Hyun Jae Kim

Research output: Contribution to journalArticle

51 Citations (Scopus)


In this letter, we proposed solution-processed AlInZnO (AIZO)/InZnO (IZO) dual-channel thin-film transistors to realize both proper switching behavior and competitive device performance at the low annealing temperature of 350°C. A thin IZO layer provides a higher carrier concentration, thereby maximizing the charge accumulation and yielding high saturation mobility μsat, whereas a thick AIZO layer controls the charge conductance resulting in suitable threshold voltage Vth. We therefore obtain excellent device characteristics at 350 °C with μsat of 1.57 cm 2Vs, Vth of 1.28 V, an on/off ratio of ∼1.4 ×107, and a subthreshold gate swing of 0.59 V/dec.

Original languageEnglish
Article number5957259
Pages (from-to)1242-1244
Number of pages3
JournalIEEE Electron Device Letters
Issue number9
Publication statusPublished - 2011 Sep 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Kim, K. M., Jeong, W. H., Kim, D. L., Rim, Y. S., Choi, Y., Ryu, M. K., Park, K. B., & Kim, H. J. (2011). Low-temperature solution processing of AlInZnO/InZnO dual-channel thin-film transistors. IEEE Electron Device Letters, 32(9), 1242-1244. [5957259]. https://doi.org/10.1109/LED.2011.2160612