Low-temperature solution processing of AlInZnO/InZnO dual-channel thin-film transistors

Kyung Min Kim, Woong Hee Jeong, Dong Lim Kim, You Seung Rim, Yuri Choi, Myung Kwan Ryu, Kyung Bae Park, Hyun Jae Kim

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

In this letter, we proposed solution-processed AlInZnO (AIZO)/InZnO (IZO) dual-channel thin-film transistors to realize both proper switching behavior and competitive device performance at the low annealing temperature of 350°C. A thin IZO layer provides a higher carrier concentration, thereby maximizing the charge accumulation and yielding high saturation mobility μsat, whereas a thick AIZO layer controls the charge conductance resulting in suitable threshold voltage Vth. We therefore obtain excellent device characteristics at 350 °C with μsat of 1.57 cm 2Vs, Vth of 1.28 V, an on/off ratio of ∼1.4 ×107, and a subthreshold gate swing of 0.59 V/dec.

Original languageEnglish
Article number5957259
Pages (from-to)1242-1244
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number9
DOIs
Publication statusPublished - 2011 Sep 1

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Thin film transistors
Threshold voltage
Carrier concentration
Annealing
Processing
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Kim, Kyung Min ; Jeong, Woong Hee ; Kim, Dong Lim ; Rim, You Seung ; Choi, Yuri ; Ryu, Myung Kwan ; Park, Kyung Bae ; Kim, Hyun Jae. / Low-temperature solution processing of AlInZnO/InZnO dual-channel thin-film transistors. In: IEEE Electron Device Letters. 2011 ; Vol. 32, No. 9. pp. 1242-1244.
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Kim, KM, Jeong, WH, Kim, DL, Rim, YS, Choi, Y, Ryu, MK, Park, KB & Kim, HJ 2011, 'Low-temperature solution processing of AlInZnO/InZnO dual-channel thin-film transistors', IEEE Electron Device Letters, vol. 32, no. 9, 5957259, pp. 1242-1244. https://doi.org/10.1109/LED.2011.2160612

Low-temperature solution processing of AlInZnO/InZnO dual-channel thin-film transistors. / Kim, Kyung Min; Jeong, Woong Hee; Kim, Dong Lim; Rim, You Seung; Choi, Yuri; Ryu, Myung Kwan; Park, Kyung Bae; Kim, Hyun Jae.

In: IEEE Electron Device Letters, Vol. 32, No. 9, 5957259, 01.09.2011, p. 1242-1244.

Research output: Contribution to journalArticle

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