Low-thermal-budget (300 °c) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing

Si Joon Kim; Yong Chan Jung; Jaidah Mohan; Hyo Jeong Kim; Sung Min Rho; Min Seong Kim; Jeong Gyu Yoo; Hye Ryeon Park; Heber Hernandez-Arriaga; Jin Hyun Kim; Hyung Tae Kim; Dong Hyun Choi; Joohye Jung; Su Min Hwang; Harrison Sejoon Kim; Hyun Jae Kim; Jiyoung Kim

doi:10.1063/5.0075466

Low-thermal-budget (300 °c) ferroelectric TiN/Hf_0.5Zr_0.5O₂/TiN capacitors realized using high-pressure annealing

Si Joon Kim, Yong Chan Jung, Jaidah Mohan, Hyo Jeong Kim, Sung Min Rho, Min Seong Kim, Jeong Gyu Yoo, Hye Ryeon Park, Heber Hernandez-Arriaga, Jin Hyun Kim, Hyung Tae Kim, Dong Hyun Choi, Joohye Jung, Su Min Hwang, Harrison Sejoon Kim, Hyun Jae Kim, Jiyoung Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

In this Letter, a high-pressure annealing (HPA) process is proposed as a way to reduce the thermal budget of Hf0.5Zr0.5O2 (HZO) thin films with ferroelectric behaviors. The low-thermal-budget process is essential for integrating ferroelectric devices in the back-end-of-line to provide more functionalities and effective memory area. For the HZO film annealed at 300 °C using the HPA process, an orthorhombic phase responsible for ferroelectric behavior was formed with a decrease in film thickness, resulting in a remanent polarization (Pr) of ∼13 μC/cm2 (i.e., 2Pr of ∼26 μC/cm2). Meanwhile, when only the annealing time was increased at 300 °C without applying pressure, the HZO film did not crystallize and exhibited linear dielectric properties. Consequently, the HZO films (<10 nm) can be crystallized by applying pressure (15 atm) even at low temperatures of 300 °C, thereby obtaining ferroelectric properties.

Original language	English
Article number	242901
Journal	Applied Physics Letters
Volume	119
Issue number	24
DOIs	https://doi.org/10.1063/5.0075466
Publication status	Published - 2021 Dec 13

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. NRF-2019R1F1A1059972) and GRC-LMD program (No. 3001.001) of SRC. This work was also partially supported by the Korea Institute for Advancement of Technology (KIAT) grant (No. P0017011, HRD Program for Industrial Innovation) and Technology Innovation Program (No. 20010806) funded by the Korea government (MOTIE). The ozone generator used in this work was provided by Toshiba-Mitsubishi-Electric Industrial Systems Corporation (TMEIC).

Publisher Copyright:
© 2021 Author(s).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/5.0075466

Cite this

Kim, S. J., Jung, Y. C., Mohan, J., Kim, H. J., Rho, S. M., Kim, M. S., Yoo, J. G., Park, H. R., Hernandez-Arriaga, H., Kim, J. H., Kim, H. T., Choi, D. H., Jung, J., Hwang, S. M., Sejoon Kim, H., Kim, H. J., & Kim, J. (2021). Low-thermal-budget (300 °c) ferroelectric TiN/Hf_0.5Zr_0.5O₂/TiN capacitors realized using high-pressure annealing. Applied Physics Letters, 119(24), [242901]. https://doi.org/10.1063/5.0075466

@article{956d226d90d34cb69a344c6060a3765c,

title = "Low-thermal-budget (300 °c) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing",

abstract = "In this Letter, a high-pressure annealing (HPA) process is proposed as a way to reduce the thermal budget of Hf0.5Zr0.5O2 (HZO) thin films with ferroelectric behaviors. The low-thermal-budget process is essential for integrating ferroelectric devices in the back-end-of-line to provide more functionalities and effective memory area. For the HZO film annealed at 300 °C using the HPA process, an orthorhombic phase responsible for ferroelectric behavior was formed with a decrease in film thickness, resulting in a remanent polarization (Pr) of ∼13 μC/cm2 (i.e., 2Pr of ∼26 μC/cm2). Meanwhile, when only the annealing time was increased at 300 °C without applying pressure, the HZO film did not crystallize and exhibited linear dielectric properties. Consequently, the HZO films (<10 nm) can be crystallized by applying pressure (15 atm) even at low temperatures of 300 °C, thereby obtaining ferroelectric properties.",

author = "Kim, {Si Joon} and Jung, {Yong Chan} and Jaidah Mohan and Kim, {Hyo Jeong} and Rho, {Sung Min} and Kim, {Min Seong} and Yoo, {Jeong Gyu} and Park, {Hye Ryeon} and Heber Hernandez-Arriaga and Kim, {Jin Hyun} and Kim, {Hyung Tae} and Choi, {Dong Hyun} and Joohye Jung and Hwang, {Su Min} and {Sejoon Kim}, Harrison and Kim, {Hyun Jae} and Jiyoung Kim",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. NRF-2019R1F1A1059972) and GRC-LMD program (No. 3001.001) of SRC. This work was also partially supported by the Korea Institute for Advancement of Technology (KIAT) grant (No. P0017011, HRD Program for Industrial Innovation) and Technology Innovation Program (No. 20010806) funded by the Korea government (MOTIE). The ozone generator used in this work was provided by Toshiba-Mitsubishi-Electric Industrial Systems Corporation (TMEIC). Publisher Copyright: {\textcopyright} 2021 Author(s).",

year = "2021",

month = dec,

day = "13",

doi = "10.1063/5.0075466",

language = "English",

volume = "119",

journal = "Applied Physics Letters",

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Kim, SJ, Jung, YC, Mohan, J, Kim, HJ, Rho, SM, Kim, MS, Yoo, JG, Park, HR, Hernandez-Arriaga, H, Kim, JH, Kim, HT, Choi, DH, Jung, J, Hwang, SM, Sejoon Kim, H, Kim, HJ & Kim, J 2021, 'Low-thermal-budget (300 °c) ferroelectric TiN/Hf_0.5Zr_0.5O₂/TiN capacitors realized using high-pressure annealing', Applied Physics Letters, vol. 119, no. 24, 242901. https://doi.org/10.1063/5.0075466

TY - JOUR

T1 - Low-thermal-budget (300 °c) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing

AU - Kim, Si Joon

AU - Jung, Yong Chan

AU - Mohan, Jaidah

AU - Kim, Hyo Jeong

AU - Rho, Sung Min

AU - Kim, Min Seong

AU - Yoo, Jeong Gyu

AU - Park, Hye Ryeon

AU - Hernandez-Arriaga, Heber

AU - Kim, Jin Hyun

AU - Kim, Hyung Tae

AU - Choi, Dong Hyun

AU - Jung, Joohye

AU - Hwang, Su Min

AU - Sejoon Kim, Harrison

AU - Kim, Hyun Jae

AU - Kim, Jiyoung

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. NRF-2019R1F1A1059972) and GRC-LMD program (No. 3001.001) of SRC. This work was also partially supported by the Korea Institute for Advancement of Technology (KIAT) grant (No. P0017011, HRD Program for Industrial Innovation) and Technology Innovation Program (No. 20010806) funded by the Korea government (MOTIE). The ozone generator used in this work was provided by Toshiba-Mitsubishi-Electric Industrial Systems Corporation (TMEIC). Publisher Copyright: © 2021 Author(s).

PY - 2021/12/13

Y1 - 2021/12/13

N2 - In this Letter, a high-pressure annealing (HPA) process is proposed as a way to reduce the thermal budget of Hf0.5Zr0.5O2 (HZO) thin films with ferroelectric behaviors. The low-thermal-budget process is essential for integrating ferroelectric devices in the back-end-of-line to provide more functionalities and effective memory area. For the HZO film annealed at 300 °C using the HPA process, an orthorhombic phase responsible for ferroelectric behavior was formed with a decrease in film thickness, resulting in a remanent polarization (Pr) of ∼13 μC/cm2 (i.e., 2Pr of ∼26 μC/cm2). Meanwhile, when only the annealing time was increased at 300 °C without applying pressure, the HZO film did not crystallize and exhibited linear dielectric properties. Consequently, the HZO films (<10 nm) can be crystallized by applying pressure (15 atm) even at low temperatures of 300 °C, thereby obtaining ferroelectric properties.

AB - In this Letter, a high-pressure annealing (HPA) process is proposed as a way to reduce the thermal budget of Hf0.5Zr0.5O2 (HZO) thin films with ferroelectric behaviors. The low-thermal-budget process is essential for integrating ferroelectric devices in the back-end-of-line to provide more functionalities and effective memory area. For the HZO film annealed at 300 °C using the HPA process, an orthorhombic phase responsible for ferroelectric behavior was formed with a decrease in film thickness, resulting in a remanent polarization (Pr) of ∼13 μC/cm2 (i.e., 2Pr of ∼26 μC/cm2). Meanwhile, when only the annealing time was increased at 300 °C without applying pressure, the HZO film did not crystallize and exhibited linear dielectric properties. Consequently, the HZO films (<10 nm) can be crystallized by applying pressure (15 atm) even at low temperatures of 300 °C, thereby obtaining ferroelectric properties.

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