Low Thermal Conductivity and High Thermoelectric Performance in In4Se3−x with Phase-Separated Indium Inclusions

Pankaj Kumar Rawat, Hwanjoo Park, Junphil Hwang, Woochul Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We report the thermoelectric properties of undoped hot-pressed In4Se3−x (x = 0.05). Stoichiometric imbalance due to selenium deficiency in In4Se3 was found to create a secondary phase of elemental indium in the host material. Heat treatment drove grain growth and increased the indium solubility in In4Se3. Indium-rich domains at grain surfaces/boundaries in untreated samples were found to redistribute inside the grains and their junctions after heat treatment. Due to enhanced phonon scattering by secondary phase of indium, very low values of thermal conductivity were observed for all samples, leading to a maximum thermoelectric figure of merit (zT) of 1.13 at 723 K along the hot-pressing direction for the heat-treated sample.

Original languageEnglish
Pages (from-to)1444-1450
Number of pages7
JournalJournal of Electronic Materials
Volume46
Issue number3
DOIs
Publication statusPublished - 2017 Mar 1

Fingerprint

Indium
indium
Thermal conductivity
thermal conductivity
inclusions
heat treatment
Heat treatment
Phonon scattering
hot pressing
Selenium
Hot pressing
selenium
Grain growth
figure of merit
solubility
Solubility
heat
scattering

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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abstract = "We report the thermoelectric properties of undoped hot-pressed In4Se3−x (x = 0.05). Stoichiometric imbalance due to selenium deficiency in In4Se3 was found to create a secondary phase of elemental indium in the host material. Heat treatment drove grain growth and increased the indium solubility in In4Se3. Indium-rich domains at grain surfaces/boundaries in untreated samples were found to redistribute inside the grains and their junctions after heat treatment. Due to enhanced phonon scattering by secondary phase of indium, very low values of thermal conductivity were observed for all samples, leading to a maximum thermoelectric figure of merit (zT) of 1.13 at 723 K along the hot-pressing direction for the heat-treated sample.",
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Low Thermal Conductivity and High Thermoelectric Performance in In4Se3−x with Phase-Separated Indium Inclusions. / Rawat, Pankaj Kumar; Park, Hwanjoo; Hwang, Junphil; Kim, Woochul.

In: Journal of Electronic Materials, Vol. 46, No. 3, 01.03.2017, p. 1444-1450.

Research output: Contribution to journalArticle

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