Low-Voltage 2D Material Field-Effect Transistors Enabled by Ion Gel Capacitive Coupling

Yongsuk Choi, Junmo Kang, Deep Jariwala, Spencer A. Wells, Moon Sung Kang, Tobin J. Marks, Mark C. Hersam, Jeong Ho Cho

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


Capacitive coupling between an overlying ion gel electrolyte and an underlying oxide thin film is utilized to substantially suppress the operating voltage of field-effect transistors (FETs) based on two-dimensional (2D) transition metal dichalcogenides and black phosphorus. The coupling of the layers is achieved following device fabrication by laminating an ion gel layer over an oxide-gated 2D FET through solution-casting methods. While the original pristine 2D FET requires tens of volts for gating through the oxide layer, the laminated ion gel layer reduces the operating voltage to below 4 V even when the same underlying substrate is used as the back gate electrode. Moreover, this capacitive coupling approach allows low-voltage operation without compromising the off-current level, which often occurs when ion gel electrolytes are directly employed as the gate dielectric material. This approach can likely be generalized to a wide variety of thin-film FETs as a postfabrication method for reducing operating voltages and power consumption.

Original languageEnglish
Pages (from-to)4008-4013
Number of pages6
JournalChemistry of Materials
Issue number9
Publication statusPublished - 2017 May 9

Bibliographical note

Funding Information:
J. H. Cho acknowledges financial support from the Center for Advanced Soft Electronics (CASE) under the Global Frontier Research Program, Korea (NRF-2013M3A6A5073177). M. C. Hersam and T. J. Marks acknowledge financial support from the Materials Research Science and Engineering Center (MRSEC) of Northwestern University (NSF DMR-1121262). This work made use of the Northwestern University Atomic and Nanoscale Characterization Experimental Center (NUANCE), which has received support from the NSF MRSEC (DMR-1121262), State of Illinois, and Northwestern University. In addition, the Raman instrumentation was funded by the Argonne-Northwestern Solar Energy Research (ANSER) Energy Frontier Research Center (DOE DE-SC0001059).

Publisher Copyright:
© 2017 American Chemical Society.

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry


Dive into the research topics of 'Low-Voltage 2D Material Field-Effect Transistors Enabled by Ion Gel Capacitive Coupling'. Together they form a unique fingerprint.

Cite this