Low-Voltage 2D Material Field-Effect Transistors Enabled by Ion Gel Capacitive Coupling

Yongsuk Choi, Junmo Kang, Deep Jariwala, Spencer A. Wells, Moon Sung Kang, Tobin J. Marks, Mark C. Hersam, Jeong Ho Cho

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Capacitive coupling between an overlying ion gel electrolyte and an underlying oxide thin film is utilized to substantially suppress the operating voltage of field-effect transistors (FETs) based on two-dimensional (2D) transition metal dichalcogenides and black phosphorus. The coupling of the layers is achieved following device fabrication by laminating an ion gel layer over an oxide-gated 2D FET through solution-casting methods. While the original pristine 2D FET requires tens of volts for gating through the oxide layer, the laminated ion gel layer reduces the operating voltage to below 4 V even when the same underlying substrate is used as the back gate electrode. Moreover, this capacitive coupling approach allows low-voltage operation without compromising the off-current level, which often occurs when ion gel electrolytes are directly employed as the gate dielectric material. This approach can likely be generalized to a wide variety of thin-film FETs as a postfabrication method for reducing operating voltages and power consumption.

Original languageEnglish
Pages (from-to)4008-4013
Number of pages6
JournalChemistry of Materials
Volume29
Issue number9
DOIs
Publication statusPublished - 2017 May 9

Fingerprint

Field effect transistors
Gels
Ions
Electric potential
Oxides
Electrolytes
Laminating
Gate dielectrics
Thin film transistors
Phosphorus
Oxide films
Transition metals
Casting
Electric power utilization
Fabrication
Thin films
Electrodes
Substrates

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

Cite this

Choi, Yongsuk ; Kang, Junmo ; Jariwala, Deep ; Wells, Spencer A. ; Kang, Moon Sung ; Marks, Tobin J. ; Hersam, Mark C. ; Cho, Jeong Ho. / Low-Voltage 2D Material Field-Effect Transistors Enabled by Ion Gel Capacitive Coupling. In: Chemistry of Materials. 2017 ; Vol. 29, No. 9. pp. 4008-4013.
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Choi, Y, Kang, J, Jariwala, D, Wells, SA, Kang, MS, Marks, TJ, Hersam, MC & Cho, JH 2017, 'Low-Voltage 2D Material Field-Effect Transistors Enabled by Ion Gel Capacitive Coupling', Chemistry of Materials, vol. 29, no. 9, pp. 4008-4013. https://doi.org/10.1021/acs.chemmater.7b00573

Low-Voltage 2D Material Field-Effect Transistors Enabled by Ion Gel Capacitive Coupling. / Choi, Yongsuk; Kang, Junmo; Jariwala, Deep; Wells, Spencer A.; Kang, Moon Sung; Marks, Tobin J.; Hersam, Mark C.; Cho, Jeong Ho.

In: Chemistry of Materials, Vol. 29, No. 9, 09.05.2017, p. 4008-4013.

Research output: Contribution to journalArticle

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AU - Kang, Junmo

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AU - Cho, Jeong Ho

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