Low-voltage complementary inverters based on ion gel-gated ReS2 and BP transistors

Jun Beom Kim, Yongsuk Choi, Ajjiporn Dathbun, Seongchan Kim, Dongun Lim, Panuk Hong, Jeong Ho Cho

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We demonstrated the preparation of low-voltage complementary inverters based on transistors made of ion gel-gated 2D materials. Mechanically-exfoliated ReS2 was utilized as an n-type semiconductor. The ultrahigh capacitance (6 μF/cm2) and long-range polarizability of the ion gel gate dielectric layer provided low-voltage operation below 2 V and allowed a coplanar-gate configuration of the transistors. The ion gel-gated ReS2 transistors exhibited excellent device performance including an electron mobility of 6.7 cm2/Vs and an on-off current ratio of ∼104. Both the charge-transport mechanism and the contact properties of the device were investigated systematically by measuring the temperature-dependent electrical properties. Mechanically-exfoliated black phosphorous (BP) or WSe2 was employed as the p-type counterpart semiconductors to fabricate the complementary inverter. The resulting 2D complementary inverter exhibited low-voltage operation below 2 V with clear signal inversion. The proposed low-voltage ion gel-gated complementary inverter based on 2D materials opens up new opportunities for realizing future electronics based on 2D materials.

Original languageEnglish
Pages (from-to)33-39
Number of pages7
JournalFlatChem
Volume5
DOIs
Publication statusPublished - 2017 Oct 1

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Transistors
Gels
Ions
Electric potential
Semiconductor materials
Electron mobility
Gate dielectrics
Charge transfer
Electric properties
Capacitance
Electronic equipment
rhenium sulfide
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Kim, Jun Beom ; Choi, Yongsuk ; Dathbun, Ajjiporn ; Kim, Seongchan ; Lim, Dongun ; Hong, Panuk ; Cho, Jeong Ho. / Low-voltage complementary inverters based on ion gel-gated ReS2 and BP transistors. In: FlatChem. 2017 ; Vol. 5. pp. 33-39.
@article{b3ee47dd17f44713a06342e7f126cf9b,
title = "Low-voltage complementary inverters based on ion gel-gated ReS2 and BP transistors",
abstract = "We demonstrated the preparation of low-voltage complementary inverters based on transistors made of ion gel-gated 2D materials. Mechanically-exfoliated ReS2 was utilized as an n-type semiconductor. The ultrahigh capacitance (6 μF/cm2) and long-range polarizability of the ion gel gate dielectric layer provided low-voltage operation below 2 V and allowed a coplanar-gate configuration of the transistors. The ion gel-gated ReS2 transistors exhibited excellent device performance including an electron mobility of 6.7 cm2/Vs and an on-off current ratio of ∼104. Both the charge-transport mechanism and the contact properties of the device were investigated systematically by measuring the temperature-dependent electrical properties. Mechanically-exfoliated black phosphorous (BP) or WSe2 was employed as the p-type counterpart semiconductors to fabricate the complementary inverter. The resulting 2D complementary inverter exhibited low-voltage operation below 2 V with clear signal inversion. The proposed low-voltage ion gel-gated complementary inverter based on 2D materials opens up new opportunities for realizing future electronics based on 2D materials.",
author = "Kim, {Jun Beom} and Yongsuk Choi and Ajjiporn Dathbun and Seongchan Kim and Dongun Lim and Panuk Hong and Cho, {Jeong Ho}",
year = "2017",
month = "10",
day = "1",
doi = "10.1016/j.flatc.2017.06.009",
language = "English",
volume = "5",
pages = "33--39",
journal = "FlatChem",
issn = "2452-2627",
publisher = "Elsevier BV",

}

Low-voltage complementary inverters based on ion gel-gated ReS2 and BP transistors. / Kim, Jun Beom; Choi, Yongsuk; Dathbun, Ajjiporn; Kim, Seongchan; Lim, Dongun; Hong, Panuk; Cho, Jeong Ho.

In: FlatChem, Vol. 5, 01.10.2017, p. 33-39.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Low-voltage complementary inverters based on ion gel-gated ReS2 and BP transistors

AU - Kim, Jun Beom

AU - Choi, Yongsuk

AU - Dathbun, Ajjiporn

AU - Kim, Seongchan

AU - Lim, Dongun

AU - Hong, Panuk

AU - Cho, Jeong Ho

PY - 2017/10/1

Y1 - 2017/10/1

N2 - We demonstrated the preparation of low-voltage complementary inverters based on transistors made of ion gel-gated 2D materials. Mechanically-exfoliated ReS2 was utilized as an n-type semiconductor. The ultrahigh capacitance (6 μF/cm2) and long-range polarizability of the ion gel gate dielectric layer provided low-voltage operation below 2 V and allowed a coplanar-gate configuration of the transistors. The ion gel-gated ReS2 transistors exhibited excellent device performance including an electron mobility of 6.7 cm2/Vs and an on-off current ratio of ∼104. Both the charge-transport mechanism and the contact properties of the device were investigated systematically by measuring the temperature-dependent electrical properties. Mechanically-exfoliated black phosphorous (BP) or WSe2 was employed as the p-type counterpart semiconductors to fabricate the complementary inverter. The resulting 2D complementary inverter exhibited low-voltage operation below 2 V with clear signal inversion. The proposed low-voltage ion gel-gated complementary inverter based on 2D materials opens up new opportunities for realizing future electronics based on 2D materials.

AB - We demonstrated the preparation of low-voltage complementary inverters based on transistors made of ion gel-gated 2D materials. Mechanically-exfoliated ReS2 was utilized as an n-type semiconductor. The ultrahigh capacitance (6 μF/cm2) and long-range polarizability of the ion gel gate dielectric layer provided low-voltage operation below 2 V and allowed a coplanar-gate configuration of the transistors. The ion gel-gated ReS2 transistors exhibited excellent device performance including an electron mobility of 6.7 cm2/Vs and an on-off current ratio of ∼104. Both the charge-transport mechanism and the contact properties of the device were investigated systematically by measuring the temperature-dependent electrical properties. Mechanically-exfoliated black phosphorous (BP) or WSe2 was employed as the p-type counterpart semiconductors to fabricate the complementary inverter. The resulting 2D complementary inverter exhibited low-voltage operation below 2 V with clear signal inversion. The proposed low-voltage ion gel-gated complementary inverter based on 2D materials opens up new opportunities for realizing future electronics based on 2D materials.

UR - http://www.scopus.com/inward/record.url?scp=85021837106&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85021837106&partnerID=8YFLogxK

U2 - 10.1016/j.flatc.2017.06.009

DO - 10.1016/j.flatc.2017.06.009

M3 - Article

VL - 5

SP - 33

EP - 39

JO - FlatChem

JF - FlatChem

SN - 2452-2627

ER -