We demonstrated the preparation of low-voltage complementary inverters based on transistors made of ion gel-gated 2D materials. Mechanically-exfoliated ReS2 was utilized as an n-type semiconductor. The ultrahigh capacitance (6 μF/cm2) and long-range polarizability of the ion gel gate dielectric layer provided low-voltage operation below 2 V and allowed a coplanar-gate configuration of the transistors. The ion gel-gated ReS2 transistors exhibited excellent device performance including an electron mobility of 6.7 cm2/Vs and an on-off current ratio of ∼104. Both the charge-transport mechanism and the contact properties of the device were investigated systematically by measuring the temperature-dependent electrical properties. Mechanically-exfoliated black phosphorous (BP) or WSe2 was employed as the p-type counterpart semiconductors to fabricate the complementary inverter. The resulting 2D complementary inverter exhibited low-voltage operation below 2 V with clear signal inversion. The proposed low-voltage ion gel-gated complementary inverter based on 2D materials opens up new opportunities for realizing future electronics based on 2D materials.
Bibliographical noteFunding Information:
This work was supported by a grant from the Center for Advanced Soft Electronics (CASE) under the Global Frontier Research Program ( 2013M3A6A5073177 ) and Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning ( 2017R1A2B2005790 and 2017R1A4A1015400 ).
© 2017 Elsevier B.V.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Surfaces, Coatings and Films
- Materials Chemistry