Low voltage complementary thin-film transistor inverters with pentacene-ZnO hybrid channels on Al Ox dielectric

Min Suk Oh; D. K. Hwang; Kimoon Lee; Seongil Im; S. Yi

doi:10.1063/1.2732819

Low voltage complementary thin-film transistor inverters with pentacene-ZnO hybrid channels on Al Ox dielectric

Min Suk Oh, D. K. Hwang, Kimoon Lee, Seongil Im, S. Yi

Department of Physics

Research output: Contribution to journal › Article › peer-review

55 Citations (Scopus)

Abstract

The authors report on the fabrication of complementary thin-film transistor (CTFT) inverters with pentacene (p type) and ZnO (n type) hybrid channels on rf-deposited Al Ox dielectrics. All deposition processes were carried out on glass substrates at low temperatures (<100 °C). Since our p -channel TFT showed somewhat equivalent field mobility of 0.11 cm2 V s compared to that of the n -channel device (0.75 cm2 V s), the hybrid CTFT inverters were designed with identical dimensions for both channels. The CTFT device demonstrated an excellent voltage gain of ∼21 with a low static power dissipation of ∼1.5 nW at a low supply voltage of 7 V.

Original language	English
Article number	173511
Journal	Applied Physics Letters
Volume	90
Issue number	17
DOIs	https://doi.org/10.1063/1.2732819
Publication status	Published - 2007

Bibliographical note

Funding Information:
The authors acknowledge the financial support from KOSEF (Program Nos. M1-0214-00-0228 and R01-2006-000-11277-0) and Brain Korea 21 program. One of the authors (M.S.O.) was supported by the Seoul Science Fellowship.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2732819

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title = "Low voltage complementary thin-film transistor inverters with pentacene-ZnO hybrid channels on Al Ox dielectric",

abstract = "The authors report on the fabrication of complementary thin-film transistor (CTFT) inverters with pentacene (p type) and ZnO (n type) hybrid channels on rf-deposited Al Ox dielectrics. All deposition processes were carried out on glass substrates at low temperatures (<100 °C). Since our p -channel TFT showed somewhat equivalent field mobility of 0.11 cm2 V s compared to that of the n -channel device (0.75 cm2 V s), the hybrid CTFT inverters were designed with identical dimensions for both channels. The CTFT device demonstrated an excellent voltage gain of ∼21 with a low static power dissipation of ∼1.5 nW at a low supply voltage of 7 V.",

author = "Oh, {Min Suk} and Hwang, {D. K.} and Kimoon Lee and Seongil Im and S. Yi",

note = "Funding Information: The authors acknowledge the financial support from KOSEF (Program Nos. M1-0214-00-0228 and R01-2006-000-11277-0) and Brain Korea 21 program. One of the authors (M.S.O.) was supported by the Seoul Science Fellowship.",

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AU - Oh, Min Suk

AU - Hwang, D. K.

AU - Lee, Kimoon

AU - Im, Seongil

AU - Yi, S.

N1 - Funding Information: The authors acknowledge the financial support from KOSEF (Program Nos. M1-0214-00-0228 and R01-2006-000-11277-0) and Brain Korea 21 program. One of the authors (M.S.O.) was supported by the Seoul Science Fellowship.

PY - 2007

Y1 - 2007

N2 - The authors report on the fabrication of complementary thin-film transistor (CTFT) inverters with pentacene (p type) and ZnO (n type) hybrid channels on rf-deposited Al Ox dielectrics. All deposition processes were carried out on glass substrates at low temperatures (<100 °C). Since our p -channel TFT showed somewhat equivalent field mobility of 0.11 cm2 V s compared to that of the n -channel device (0.75 cm2 V s), the hybrid CTFT inverters were designed with identical dimensions for both channels. The CTFT device demonstrated an excellent voltage gain of ∼21 with a low static power dissipation of ∼1.5 nW at a low supply voltage of 7 V.

AB - The authors report on the fabrication of complementary thin-film transistor (CTFT) inverters with pentacene (p type) and ZnO (n type) hybrid channels on rf-deposited Al Ox dielectrics. All deposition processes were carried out on glass substrates at low temperatures (<100 °C). Since our p -channel TFT showed somewhat equivalent field mobility of 0.11 cm2 V s compared to that of the n -channel device (0.75 cm2 V s), the hybrid CTFT inverters were designed with identical dimensions for both channels. The CTFT device demonstrated an excellent voltage gain of ∼21 with a low static power dissipation of ∼1.5 nW at a low supply voltage of 7 V.

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Low voltage complementary thin-film transistor inverters with pentacene-ZnO hybrid channels on Al Ox dielectric

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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