Low voltage complementary thin-film transistor inverters with pentacene-ZnO hybrid channels on Al Ox dielectric

Min Suk Oh, D. K. Hwang, Kimoon Lee, Seongil Im, S. Yi

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

The authors report on the fabrication of complementary thin-film transistor (CTFT) inverters with pentacene (p type) and ZnO (n type) hybrid channels on rf-deposited Al Ox dielectrics. All deposition processes were carried out on glass substrates at low temperatures (<100 °C). Since our p -channel TFT showed somewhat equivalent field mobility of 0.11 cm2 V s compared to that of the n -channel device (0.75 cm2 V s), the hybrid CTFT inverters were designed with identical dimensions for both channels. The CTFT device demonstrated an excellent voltage gain of ∼21 with a low static power dissipation of ∼1.5 nW at a low supply voltage of 7 V.

Original languageEnglish
Article number173511
JournalApplied Physics Letters
Volume90
Issue number17
DOIs
Publication statusPublished - 2007 May 21

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Low voltage complementary thin-film transistor inverters with pentacene-ZnO hybrid channels on Al Ox dielectric'. Together they form a unique fingerprint.

  • Cite this