The authors report on the fabrication of complementary thin-film transistor (CTFT) inverters with pentacene (p type) and ZnO (n type) hybrid channels on rf-deposited Al Ox dielectrics. All deposition processes were carried out on glass substrates at low temperatures (<100 °C). Since our p -channel TFT showed somewhat equivalent field mobility of 0.11 cm2 V s compared to that of the n -channel device (0.75 cm2 V s), the hybrid CTFT inverters were designed with identical dimensions for both channels. The CTFT device demonstrated an excellent voltage gain of ∼21 with a low static power dissipation of ∼1.5 nW at a low supply voltage of 7 V.
Bibliographical noteFunding Information:
The authors acknowledge the financial support from KOSEF (Program Nos. M1-0214-00-0228 and R01-2006-000-11277-0) and Brain Korea 21 program. One of the authors (M.S.O.) was supported by the Seoul Science Fellowship.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)