Abstract
The authors report on the fabrication of complementary thin-film transistor (CTFT) inverters with pentacene (p type) and ZnO (n type) hybrid channels on rf-deposited Al Ox dielectrics. All deposition processes were carried out on glass substrates at low temperatures (<100 °C). Since our p -channel TFT showed somewhat equivalent field mobility of 0.11 cm2 V s compared to that of the n -channel device (0.75 cm2 V s), the hybrid CTFT inverters were designed with identical dimensions for both channels. The CTFT device demonstrated an excellent voltage gain of ∼21 with a low static power dissipation of ∼1.5 nW at a low supply voltage of 7 V.
| Original language | English |
|---|---|
| Article number | 173511 |
| Journal | Applied Physics Letters |
| Volume | 90 |
| Issue number | 17 |
| DOIs | |
| Publication status | Published - 2007 May 21 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Oh, M. S., Hwang, D. K., Lee, K., Im, S., & Yi, S. (2007). Low voltage complementary thin-film transistor inverters with pentacene-ZnO hybrid channels on Al Ox dielectric. Applied Physics Letters, 90(17), [173511]. https://doi.org/10.1063/1.2732819