The authors report on the fabrication of pentacene-based thin-film transistors (TFTs) with a 13 nm -thick nanohybrid superlattice-type dielectric composed of ten units of molecular aluminum oxide (Al Ox) -self-assembled multilayer (SAMu) lattice on indium-tin-oxide (ITO) glass or on n+ -Si substrate. The Al Ox -SAMu nanohybrid layers showed high dielectric capacitances of 187 and 233 nF cm2 on ITO glass and on n+ -Si substrate, respectively, along with a high dielectric strength of 4 MVcm in both cases. Our pentacene-TFTs showed a maximum field effect mobility of 0.92 cm2 V s, operating at -3 V with an on/off current ratio of ∼ 103. Load-resistance inverter using our pentacene-TFT demonstrated a decent voltage gain of ∼5.
Bibliographical noteFunding Information:
The authors acknowledge the financial support from KOSEF (Program No. Ml-0214-00-0228) and Brain Korea 21 Project.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)