Low-voltage-driven pentacene thin-film transistor with an organic-inorganic nanohybrid dielectric

Kwang H. Lee, Jeong M. Choi, Seongil Im, Byoung H. Lee, Kyo K. Im, Myung M. Sung, Seungjun Lee

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

The authors report on the fabrication of pentacene-based thin-film transistors (TFTs) with a 13 nm -thick nanohybrid superlattice-type dielectric composed of ten units of molecular aluminum oxide (Al Ox) -self-assembled multilayer (SAMu) lattice on indium-tin-oxide (ITO) glass or on n+ -Si substrate. The Al Ox -SAMu nanohybrid layers showed high dielectric capacitances of 187 and 233 nF cm2 on ITO glass and on n+ -Si substrate, respectively, along with a high dielectric strength of 4 MVcm in both cases. Our pentacene-TFTs showed a maximum field effect mobility of 0.92 cm2 V s, operating at -3 V with an on/off current ratio of ∼ 103. Load-resistance inverter using our pentacene-TFT demonstrated a decent voltage gain of ∼5.

Original languageEnglish
Article number123502
JournalApplied Physics Letters
Volume91
Issue number12
DOIs
Publication statusPublished - 2007 Sep 28

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low voltage
transistors
indium oxides
tin oxides
thin films
aluminum oxides
glass
capacitance
fabrication
electric potential

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Lee, Kwang H. ; Choi, Jeong M. ; Im, Seongil ; Lee, Byoung H. ; Im, Kyo K. ; Sung, Myung M. ; Lee, Seungjun. / Low-voltage-driven pentacene thin-film transistor with an organic-inorganic nanohybrid dielectric. In: Applied Physics Letters. 2007 ; Vol. 91, No. 12.
@article{92ed2a578e1a49e2ab2e5328827b69b5,
title = "Low-voltage-driven pentacene thin-film transistor with an organic-inorganic nanohybrid dielectric",
abstract = "The authors report on the fabrication of pentacene-based thin-film transistors (TFTs) with a 13 nm -thick nanohybrid superlattice-type dielectric composed of ten units of molecular aluminum oxide (Al Ox) -self-assembled multilayer (SAMu) lattice on indium-tin-oxide (ITO) glass or on n+ -Si substrate. The Al Ox -SAMu nanohybrid layers showed high dielectric capacitances of 187 and 233 nF cm2 on ITO glass and on n+ -Si substrate, respectively, along with a high dielectric strength of 4 MVcm in both cases. Our pentacene-TFTs showed a maximum field effect mobility of 0.92 cm2 V s, operating at -3 V with an on/off current ratio of ∼ 103. Load-resistance inverter using our pentacene-TFT demonstrated a decent voltage gain of ∼5.",
author = "Lee, {Kwang H.} and Choi, {Jeong M.} and Seongil Im and Lee, {Byoung H.} and Im, {Kyo K.} and Sung, {Myung M.} and Seungjun Lee",
year = "2007",
month = "9",
day = "28",
doi = "10.1063/1.2786595",
language = "English",
volume = "91",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

Low-voltage-driven pentacene thin-film transistor with an organic-inorganic nanohybrid dielectric. / Lee, Kwang H.; Choi, Jeong M.; Im, Seongil; Lee, Byoung H.; Im, Kyo K.; Sung, Myung M.; Lee, Seungjun.

In: Applied Physics Letters, Vol. 91, No. 12, 123502, 28.09.2007.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Low-voltage-driven pentacene thin-film transistor with an organic-inorganic nanohybrid dielectric

AU - Lee, Kwang H.

AU - Choi, Jeong M.

AU - Im, Seongil

AU - Lee, Byoung H.

AU - Im, Kyo K.

AU - Sung, Myung M.

AU - Lee, Seungjun

PY - 2007/9/28

Y1 - 2007/9/28

N2 - The authors report on the fabrication of pentacene-based thin-film transistors (TFTs) with a 13 nm -thick nanohybrid superlattice-type dielectric composed of ten units of molecular aluminum oxide (Al Ox) -self-assembled multilayer (SAMu) lattice on indium-tin-oxide (ITO) glass or on n+ -Si substrate. The Al Ox -SAMu nanohybrid layers showed high dielectric capacitances of 187 and 233 nF cm2 on ITO glass and on n+ -Si substrate, respectively, along with a high dielectric strength of 4 MVcm in both cases. Our pentacene-TFTs showed a maximum field effect mobility of 0.92 cm2 V s, operating at -3 V with an on/off current ratio of ∼ 103. Load-resistance inverter using our pentacene-TFT demonstrated a decent voltage gain of ∼5.

AB - The authors report on the fabrication of pentacene-based thin-film transistors (TFTs) with a 13 nm -thick nanohybrid superlattice-type dielectric composed of ten units of molecular aluminum oxide (Al Ox) -self-assembled multilayer (SAMu) lattice on indium-tin-oxide (ITO) glass or on n+ -Si substrate. The Al Ox -SAMu nanohybrid layers showed high dielectric capacitances of 187 and 233 nF cm2 on ITO glass and on n+ -Si substrate, respectively, along with a high dielectric strength of 4 MVcm in both cases. Our pentacene-TFTs showed a maximum field effect mobility of 0.92 cm2 V s, operating at -3 V with an on/off current ratio of ∼ 103. Load-resistance inverter using our pentacene-TFT demonstrated a decent voltage gain of ∼5.

UR - http://www.scopus.com/inward/record.url?scp=34648840566&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34648840566&partnerID=8YFLogxK

U2 - 10.1063/1.2786595

DO - 10.1063/1.2786595

M3 - Article

AN - SCOPUS:34648840566

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 12

M1 - 123502

ER -