Low-voltage driving solution-processed nickel oxide based unipolar resistive switching memory with Ni nanoparticles

Doo Hyun Yoon, Si Joon Kim, Joohye Jung, Hyun Soo Lim, Hyun Jae Kim

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24 Citations (Scopus)


Resistive random access memory (RRAM) combines the advantages of nonvolatile flash memory and volatile dynamic random access memory, avoiding their drawbacks. For the practical use of RRAM, achieving low-voltage driving is strongly desired. Here we report the effect of Ni nanoparticles on solution-processed NiO based RRAM which can realize a one diode one resistor operation by unipolar resistive switching mode and low-voltage driving for future demands. The Ni nanoparticles not only contributed to high oxygen mobility, but also affected effective insulator thickness reduction, and stoichiometric variation in NiO thin films. Furthermore, the Ni nanoparticle embedded device demonstrated good reliability. These findings can enhance the applicability of RRAM as a next generation memory device.

Original languageEnglish
Pages (from-to)17568-17572
Number of pages5
JournalJournal of Materials Chemistry
Issue number34
Publication statusPublished - 2012 Sep 14


All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

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