We report on the fabrication of pentacene-based thin-film transistors (TFTs) with poly-4-vinylphenol (PVP)/yttrium oxide (Y Ox) double gate insulator films. The minimum PVP and Y Ox layer thicknesses were chosen to be 45 and 50 nm, respectively. The PVP and Y Ox double dielectric layers with the minimum thicknesses exhibited a high dielectric capacitance of 70.8 nF cm2 and quite a good dielectric strength of ∼2 MVcm at a leakage current level of ∼ 10-6 A cm2 while the leakage current from either PVP or Y Ox alone was too high. Our pentacene TFTs with the 45 nm thin PVP50 nm thin Y Ox films operated at -5 V showing a high field effect mobility of 1.74 cm2 V s and a decent on/off current ratio of 104. Our work demonstrates that the PVPY Ox double layer is a promising gate dielectric to realize low-voltage high-mobility organic TFTs.
Bibliographical noteFunding Information:
The authors are very appreciative of the financial support from KOSEF (Program No. M1-0214-00-0228), LG. Philips LCD (project year 2005), and they also acknowledge the support from Brain Korea 21 Project. One of the authors (J.H.K.) acknowledges financial support from the Electron Spin Science Center at Postech, funded by KOSEF/MOST.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)