Abstract
We report on the fabrication of pentacene-based thin-film transistors (TFTs) with poly-4-vinylphenol (PVP)/yttrium oxide (Y Ox) double gate insulator films. The minimum PVP and Y Ox layer thicknesses were chosen to be 45 and 50 nm, respectively. The PVP and Y Ox double dielectric layers with the minimum thicknesses exhibited a high dielectric capacitance of 70.8 nF cm2 and quite a good dielectric strength of ∼2 MVcm at a leakage current level of ∼ 10-6 A cm2 while the leakage current from either PVP or Y Ox alone was too high. Our pentacene TFTs with the 45 nm thin PVP50 nm thin Y Ox films operated at -5 V showing a high field effect mobility of 1.74 cm2 V s and a decent on/off current ratio of 104. Our work demonstrates that the PVPY Ox double layer is a promising gate dielectric to realize low-voltage high-mobility organic TFTs.
| Original language | English |
|---|---|
| Article number | 243513 |
| Journal | Applied Physics Letters |
| Volume | 88 |
| Issue number | 24 |
| DOIs | |
| Publication status | Published - 2006 Jun 12 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Low-voltage high-mobility pentacene thin-film transistors with polymer/high- k oxide double gate dielectrics. / Hwang, D. K.; Lee, Kimoon; Kim, Jae Hoon; Im, Seongil; Kim, Chang Su; Baik, Hong Koo; Park, Ji Hoon; Kim, Eugene.
In: Applied Physics Letters, Vol. 88, No. 24, 243513, 12.06.2006.Research output: Contribution to journal › Article
TY - JOUR
T1 - Low-voltage high-mobility pentacene thin-film transistors with polymer/high- k oxide double gate dielectrics
AU - Hwang, D. K.
AU - Lee, Kimoon
AU - Kim, Jae Hoon
AU - Im, Seongil
AU - Kim, Chang Su
AU - Baik, Hong Koo
AU - Park, Ji Hoon
AU - Kim, Eugene
PY - 2006/6/12
Y1 - 2006/6/12
N2 - We report on the fabrication of pentacene-based thin-film transistors (TFTs) with poly-4-vinylphenol (PVP)/yttrium oxide (Y Ox) double gate insulator films. The minimum PVP and Y Ox layer thicknesses were chosen to be 45 and 50 nm, respectively. The PVP and Y Ox double dielectric layers with the minimum thicknesses exhibited a high dielectric capacitance of 70.8 nF cm2 and quite a good dielectric strength of ∼2 MVcm at a leakage current level of ∼ 10-6 A cm2 while the leakage current from either PVP or Y Ox alone was too high. Our pentacene TFTs with the 45 nm thin PVP50 nm thin Y Ox films operated at -5 V showing a high field effect mobility of 1.74 cm2 V s and a decent on/off current ratio of 104. Our work demonstrates that the PVPY Ox double layer is a promising gate dielectric to realize low-voltage high-mobility organic TFTs.
AB - We report on the fabrication of pentacene-based thin-film transistors (TFTs) with poly-4-vinylphenol (PVP)/yttrium oxide (Y Ox) double gate insulator films. The minimum PVP and Y Ox layer thicknesses were chosen to be 45 and 50 nm, respectively. The PVP and Y Ox double dielectric layers with the minimum thicknesses exhibited a high dielectric capacitance of 70.8 nF cm2 and quite a good dielectric strength of ∼2 MVcm at a leakage current level of ∼ 10-6 A cm2 while the leakage current from either PVP or Y Ox alone was too high. Our pentacene TFTs with the 45 nm thin PVP50 nm thin Y Ox films operated at -5 V showing a high field effect mobility of 1.74 cm2 V s and a decent on/off current ratio of 104. Our work demonstrates that the PVPY Ox double layer is a promising gate dielectric to realize low-voltage high-mobility organic TFTs.
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U2 - 10.1063/1.2206555
DO - 10.1063/1.2206555
M3 - Article
AN - SCOPUS:33745196448
VL - 88
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 24
M1 - 243513
ER -