Low-voltage high-mobility pentacene thin-film transistors with polymer/high- k oxide double gate dielectrics

D. K. Hwang; Kimoon Lee; Jae Hoon Kim; Seongil Im; Chang Su Kim; Hong Koo Baik; Ji Hoon Park; Eugene Kim

doi:10.1063/1.2206555

Low-voltage high-mobility pentacene thin-film transistors with polymer/high- k oxide double gate dielectrics

D. K. Hwang, Kimoon Lee, Jae Hoon Kim, Seongil Im, Chang Su Kim, Hong Koo Baik, Ji Hoon Park, Eugene Kim

Research output: Contribution to journal › Article › peer-review

66 Citations (Scopus)

Abstract

We report on the fabrication of pentacene-based thin-film transistors (TFTs) with poly-4-vinylphenol (PVP)/yttrium oxide (Y Ox) double gate insulator films. The minimum PVP and Y Ox layer thicknesses were chosen to be 45 and 50 nm, respectively. The PVP and Y Ox double dielectric layers with the minimum thicknesses exhibited a high dielectric capacitance of 70.8 nF cm2 and quite a good dielectric strength of ∼2 MVcm at a leakage current level of ∼ 10-6 A cm2 while the leakage current from either PVP or Y Ox alone was too high. Our pentacene TFTs with the 45 nm thin PVP50 nm thin Y Ox films operated at -5 V showing a high field effect mobility of 1.74 cm2 V s and a decent on/off current ratio of 104. Our work demonstrates that the PVPY Ox double layer is a promising gate dielectric to realize low-voltage high-mobility organic TFTs.

Original language	English
Article number	243513
Journal	Applied Physics Letters
Volume	88
Issue number	24
DOIs	https://doi.org/10.1063/1.2206555
Publication status	Published - 2006 Jun 12

Bibliographical note

Funding Information:
The authors are very appreciative of the financial support from KOSEF (Program No. M1-0214-00-0228), LG. Philips LCD (project year 2005), and they also acknowledge the support from Brain Korea 21 Project. One of the authors (J.H.K.) acknowledges financial support from the Electron Spin Science Center at Postech, funded by KOSEF/MOST.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "Low-voltage high-mobility pentacene thin-film transistors with polymer/high- k oxide double gate dielectrics",

abstract = "We report on the fabrication of pentacene-based thin-film transistors (TFTs) with poly-4-vinylphenol (PVP)/yttrium oxide (Y Ox) double gate insulator films. The minimum PVP and Y Ox layer thicknesses were chosen to be 45 and 50 nm, respectively. The PVP and Y Ox double dielectric layers with the minimum thicknesses exhibited a high dielectric capacitance of 70.8 nF cm2 and quite a good dielectric strength of ∼2 MVcm at a leakage current level of ∼ 10-6 A cm2 while the leakage current from either PVP or Y Ox alone was too high. Our pentacene TFTs with the 45 nm thin PVP50 nm thin Y Ox films operated at -5 V showing a high field effect mobility of 1.74 cm2 V s and a decent on/off current ratio of 104. Our work demonstrates that the PVPY Ox double layer is a promising gate dielectric to realize low-voltage high-mobility organic TFTs.",

author = "Hwang, {D. K.} and Kimoon Lee and Kim, {Jae Hoon} and Seongil Im and Kim, {Chang Su} and Baik, {Hong Koo} and Park, {Ji Hoon} and Eugene Kim",

note = "Funding Information: The authors are very appreciative of the financial support from KOSEF (Program No. M1-0214-00-0228), LG. Philips LCD (project year 2005), and they also acknowledge the support from Brain Korea 21 Project. One of the authors (J.H.K.) acknowledges financial support from the Electron Spin Science Center at Postech, funded by KOSEF/MOST.",

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AU - Hwang, D. K.

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AU - Im, Seongil

AU - Kim, Chang Su

AU - Baik, Hong Koo

AU - Park, Ji Hoon

AU - Kim, Eugene

N1 - Funding Information: The authors are very appreciative of the financial support from KOSEF (Program No. M1-0214-00-0228), LG. Philips LCD (project year 2005), and they also acknowledge the support from Brain Korea 21 Project. One of the authors (J.H.K.) acknowledges financial support from the Electron Spin Science Center at Postech, funded by KOSEF/MOST.

PY - 2006/6/12

Y1 - 2006/6/12

N2 - We report on the fabrication of pentacene-based thin-film transistors (TFTs) with poly-4-vinylphenol (PVP)/yttrium oxide (Y Ox) double gate insulator films. The minimum PVP and Y Ox layer thicknesses were chosen to be 45 and 50 nm, respectively. The PVP and Y Ox double dielectric layers with the minimum thicknesses exhibited a high dielectric capacitance of 70.8 nF cm2 and quite a good dielectric strength of ∼2 MVcm at a leakage current level of ∼ 10-6 A cm2 while the leakage current from either PVP or Y Ox alone was too high. Our pentacene TFTs with the 45 nm thin PVP50 nm thin Y Ox films operated at -5 V showing a high field effect mobility of 1.74 cm2 V s and a decent on/off current ratio of 104. Our work demonstrates that the PVPY Ox double layer is a promising gate dielectric to realize low-voltage high-mobility organic TFTs.

AB - We report on the fabrication of pentacene-based thin-film transistors (TFTs) with poly-4-vinylphenol (PVP)/yttrium oxide (Y Ox) double gate insulator films. The minimum PVP and Y Ox layer thicknesses were chosen to be 45 and 50 nm, respectively. The PVP and Y Ox double dielectric layers with the minimum thicknesses exhibited a high dielectric capacitance of 70.8 nF cm2 and quite a good dielectric strength of ∼2 MVcm at a leakage current level of ∼ 10-6 A cm2 while the leakage current from either PVP or Y Ox alone was too high. Our pentacene TFTs with the 45 nm thin PVP50 nm thin Y Ox films operated at -5 V showing a high field effect mobility of 1.74 cm2 V s and a decent on/off current ratio of 104. Our work demonstrates that the PVPY Ox double layer is a promising gate dielectric to realize low-voltage high-mobility organic TFTs.

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Low-voltage high-mobility pentacene thin-film transistors with polymer/high- k oxide double gate dielectrics

Abstract

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