Low-voltage high-mobility pentacene thin-film transistors with polymer/high- k oxide double gate dielectrics

D. K. Hwang, Kimoon Lee, Jae Hoon Kim, Seongil Im, Chang Su Kim, Hong Koo Baik, Ji Hoon Park, Eugene Kim

Research output: Contribution to journalArticle

62 Citations (Scopus)

Abstract

We report on the fabrication of pentacene-based thin-film transistors (TFTs) with poly-4-vinylphenol (PVP)/yttrium oxide (Y Ox) double gate insulator films. The minimum PVP and Y Ox layer thicknesses were chosen to be 45 and 50 nm, respectively. The PVP and Y Ox double dielectric layers with the minimum thicknesses exhibited a high dielectric capacitance of 70.8 nF cm2 and quite a good dielectric strength of ∼2 MVcm at a leakage current level of ∼ 10-6 A cm2 while the leakage current from either PVP or Y Ox alone was too high. Our pentacene TFTs with the 45 nm thin PVP50 nm thin Y Ox films operated at -5 V showing a high field effect mobility of 1.74 cm2 V s and a decent on/off current ratio of 104. Our work demonstrates that the PVPY Ox double layer is a promising gate dielectric to realize low-voltage high-mobility organic TFTs.

Original languageEnglish
Article number243513
JournalApplied Physics Letters
Volume88
Issue number24
DOIs
Publication statusPublished - 2006 Jun 12

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yttrium oxides
high polymers
low voltage
transistors
oxides
thin films
leakage
oxide films
capacitance
insulators
fabrication

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Low-voltage high-mobility pentacene thin-film transistors with polymer/high- k oxide double gate dielectrics",
abstract = "We report on the fabrication of pentacene-based thin-film transistors (TFTs) with poly-4-vinylphenol (PVP)/yttrium oxide (Y Ox) double gate insulator films. The minimum PVP and Y Ox layer thicknesses were chosen to be 45 and 50 nm, respectively. The PVP and Y Ox double dielectric layers with the minimum thicknesses exhibited a high dielectric capacitance of 70.8 nF cm2 and quite a good dielectric strength of ∼2 MVcm at a leakage current level of ∼ 10-6 A cm2 while the leakage current from either PVP or Y Ox alone was too high. Our pentacene TFTs with the 45 nm thin PVP50 nm thin Y Ox films operated at -5 V showing a high field effect mobility of 1.74 cm2 V s and a decent on/off current ratio of 104. Our work demonstrates that the PVPY Ox double layer is a promising gate dielectric to realize low-voltage high-mobility organic TFTs.",
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Low-voltage high-mobility pentacene thin-film transistors with polymer/high- k oxide double gate dielectrics. / Hwang, D. K.; Lee, Kimoon; Kim, Jae Hoon; Im, Seongil; Kim, Chang Su; Baik, Hong Koo; Park, Ji Hoon; Kim, Eugene.

In: Applied Physics Letters, Vol. 88, No. 24, 243513, 12.06.2006.

Research output: Contribution to journalArticle

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AU - Kim, Chang Su

AU - Baik, Hong Koo

AU - Park, Ji Hoon

AU - Kim, Eugene

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