Low-voltage pentacene thin-film transistor with a polymer/ YO x/polymer triple-layer dielectric on a plastic substrate

D. K. Hwang, Jeong M. Choi, Ji Hoon Park, Jae Hoon Kim, Eugene Kim, Seongil Im

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We report on the fabrication of pentacene thin-film transistors (TFTs) with a poly-4-vinylphenol (PVP)yttrium oxide (YOx) PVP triple-layer dielectric deposited on an indium-tin oxide (ITO)/plastic substrate. Our PVP YOx PVP triple layer exhibited 2 orders of magnitude lower gate current leakage than that of a PVP YOx double layer because the former has a PVP buffer to cope with the irregular surfaces of the ITO/plastic substrate. Adopting the triple-layer dielectric, our pentacene TFTs with NiOx and Au source/drain electrodes exhibited high field mobilities of ∼1.37 and 0.84 cm2 V s, respectively, under low driving voltage conditions (less than -8 V). We conclude that our triple-layer approach is quite a promising and practical way to realize a flexible low-voltage high-performance organic TFT on ITO/plastic substrates with rough surfaces.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume10
Issue number4
DOIs
Publication statusPublished - 2007 Feb 19

Fingerprint

Yttrium oxide
Thin film transistors
Tin oxides
Indium
low voltage
Polymers
transistors
yttrium oxides
plastics
Plastics
indium oxides
tin oxides
polymers
Electric potential
Substrates
thin films
Leakage currents
Fabrication
Electrodes
leakage

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

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abstract = "We report on the fabrication of pentacene thin-film transistors (TFTs) with a poly-4-vinylphenol (PVP)yttrium oxide (YOx) PVP triple-layer dielectric deposited on an indium-tin oxide (ITO)/plastic substrate. Our PVP YOx PVP triple layer exhibited 2 orders of magnitude lower gate current leakage than that of a PVP YOx double layer because the former has a PVP buffer to cope with the irregular surfaces of the ITO/plastic substrate. Adopting the triple-layer dielectric, our pentacene TFTs with NiOx and Au source/drain electrodes exhibited high field mobilities of ∼1.37 and 0.84 cm2 V s, respectively, under low driving voltage conditions (less than -8 V). We conclude that our triple-layer approach is quite a promising and practical way to realize a flexible low-voltage high-performance organic TFT on ITO/plastic substrates with rough surfaces.",
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Low-voltage pentacene thin-film transistor with a polymer/ YO x/polymer triple-layer dielectric on a plastic substrate. / Hwang, D. K.; Choi, Jeong M.; Park, Ji Hoon; Kim, Jae Hoon; Kim, Eugene; Im, Seongil.

In: Electrochemical and Solid-State Letters, Vol. 10, No. 4, 19.02.2007.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Hwang, D. K.

AU - Choi, Jeong M.

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AU - Kim, Jae Hoon

AU - Kim, Eugene

AU - Im, Seongil

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