Low-voltage solution-processed graphene transistors based on chemically and solvothermally reduced graphene oxide

Beom Joon Kim, Moon Sung Kang, Viet Hung Pham, Tran Viet Cuong, Eui Jung Kim, Jin Suk Chung, Seung Hyun Hur, Jeong Ho Cho

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21 Citations (Scopus)


We have developed solution-processed reduced graphene oxide (RGO) transistors with ion gel gate dielectrics. The combination of solution-processed high-capacitance ion gel gate dielectrics and spray-coated RGO films yielded high-performance RGO transistors that operated below 4 V. Two reduction processes were applied to GO: (i) chemical reduction by hydrazine and (ii) solvothermal reduction in N-methyl-2-pyrrolidone. Chemical reduction provided a more efficient route to reduce GO than solvothermal reduction, and the resulting RGO films yielded higher electron and hole mobilities than films based on solvothermal methods. Temperature-dependent transport studies revealed that higher mobilities in RGO films based on chemical reduction result from (i) more effective delocalization of the charge carriers, (ii) more numerous localized states near the Fermi energy, and (iii) a longer optimum hopping distance, compared to those for films based on solvothermal reduction.

Original languageEnglish
Pages (from-to)13068-13073
Number of pages6
JournalJournal of Materials Chemistry
Issue number34
Publication statusPublished - 2011 Sep 14


All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

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