Low-voltage solution-processed graphene transistors based on chemically and solvothermally reduced graphene oxide

Beom Joon Kim, Moon Sung Kang, Viet Hung Pham, Tran Viet Cuong, Eui Jung Kim, Jin Suk Chung, Seung Hyun Hur, Jeong Ho Cho

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We have developed solution-processed reduced graphene oxide (RGO) transistors with ion gel gate dielectrics. The combination of solution-processed high-capacitance ion gel gate dielectrics and spray-coated RGO films yielded high-performance RGO transistors that operated below 4 V. Two reduction processes were applied to GO: (i) chemical reduction by hydrazine and (ii) solvothermal reduction in N-methyl-2-pyrrolidone. Chemical reduction provided a more efficient route to reduce GO than solvothermal reduction, and the resulting RGO films yielded higher electron and hole mobilities than films based on solvothermal methods. Temperature-dependent transport studies revealed that higher mobilities in RGO films based on chemical reduction result from (i) more effective delocalization of the charge carriers, (ii) more numerous localized states near the Fermi energy, and (iii) a longer optimum hopping distance, compared to those for films based on solvothermal reduction.

Original languageEnglish
Pages (from-to)13068-13073
Number of pages6
JournalJournal of Materials Chemistry
Volume21
Issue number34
DOIs
Publication statusPublished - 2011 Sep 14

Fingerprint

Graphite
Oxides
Graphene
Electric potential
Oxide films
hydrazine
Gate dielectrics
Transistors
Gels
Ions
Hole mobility
Electron mobility
Hydrazine
Graphene transistors
Fermi level
Charge carriers
Capacitance

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

Cite this

Kim, Beom Joon ; Kang, Moon Sung ; Pham, Viet Hung ; Cuong, Tran Viet ; Kim, Eui Jung ; Chung, Jin Suk ; Hur, Seung Hyun ; Cho, Jeong Ho. / Low-voltage solution-processed graphene transistors based on chemically and solvothermally reduced graphene oxide. In: Journal of Materials Chemistry. 2011 ; Vol. 21, No. 34. pp. 13068-13073.
@article{a12396513e3a4c1088b754006c53c849,
title = "Low-voltage solution-processed graphene transistors based on chemically and solvothermally reduced graphene oxide",
abstract = "We have developed solution-processed reduced graphene oxide (RGO) transistors with ion gel gate dielectrics. The combination of solution-processed high-capacitance ion gel gate dielectrics and spray-coated RGO films yielded high-performance RGO transistors that operated below 4 V. Two reduction processes were applied to GO: (i) chemical reduction by hydrazine and (ii) solvothermal reduction in N-methyl-2-pyrrolidone. Chemical reduction provided a more efficient route to reduce GO than solvothermal reduction, and the resulting RGO films yielded higher electron and hole mobilities than films based on solvothermal methods. Temperature-dependent transport studies revealed that higher mobilities in RGO films based on chemical reduction result from (i) more effective delocalization of the charge carriers, (ii) more numerous localized states near the Fermi energy, and (iii) a longer optimum hopping distance, compared to those for films based on solvothermal reduction.",
author = "Kim, {Beom Joon} and Kang, {Moon Sung} and Pham, {Viet Hung} and Cuong, {Tran Viet} and Kim, {Eui Jung} and Chung, {Jin Suk} and Hur, {Seung Hyun} and Cho, {Jeong Ho}",
year = "2011",
month = "9",
day = "14",
doi = "10.1039/c1jm11691f",
language = "English",
volume = "21",
pages = "13068--13073",
journal = "Journal of Materials Chemistry",
issn = "0959-9428",
publisher = "Royal Society of Chemistry",
number = "34",

}

Low-voltage solution-processed graphene transistors based on chemically and solvothermally reduced graphene oxide. / Kim, Beom Joon; Kang, Moon Sung; Pham, Viet Hung; Cuong, Tran Viet; Kim, Eui Jung; Chung, Jin Suk; Hur, Seung Hyun; Cho, Jeong Ho.

In: Journal of Materials Chemistry, Vol. 21, No. 34, 14.09.2011, p. 13068-13073.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Low-voltage solution-processed graphene transistors based on chemically and solvothermally reduced graphene oxide

AU - Kim, Beom Joon

AU - Kang, Moon Sung

AU - Pham, Viet Hung

AU - Cuong, Tran Viet

AU - Kim, Eui Jung

AU - Chung, Jin Suk

AU - Hur, Seung Hyun

AU - Cho, Jeong Ho

PY - 2011/9/14

Y1 - 2011/9/14

N2 - We have developed solution-processed reduced graphene oxide (RGO) transistors with ion gel gate dielectrics. The combination of solution-processed high-capacitance ion gel gate dielectrics and spray-coated RGO films yielded high-performance RGO transistors that operated below 4 V. Two reduction processes were applied to GO: (i) chemical reduction by hydrazine and (ii) solvothermal reduction in N-methyl-2-pyrrolidone. Chemical reduction provided a more efficient route to reduce GO than solvothermal reduction, and the resulting RGO films yielded higher electron and hole mobilities than films based on solvothermal methods. Temperature-dependent transport studies revealed that higher mobilities in RGO films based on chemical reduction result from (i) more effective delocalization of the charge carriers, (ii) more numerous localized states near the Fermi energy, and (iii) a longer optimum hopping distance, compared to those for films based on solvothermal reduction.

AB - We have developed solution-processed reduced graphene oxide (RGO) transistors with ion gel gate dielectrics. The combination of solution-processed high-capacitance ion gel gate dielectrics and spray-coated RGO films yielded high-performance RGO transistors that operated below 4 V. Two reduction processes were applied to GO: (i) chemical reduction by hydrazine and (ii) solvothermal reduction in N-methyl-2-pyrrolidone. Chemical reduction provided a more efficient route to reduce GO than solvothermal reduction, and the resulting RGO films yielded higher electron and hole mobilities than films based on solvothermal methods. Temperature-dependent transport studies revealed that higher mobilities in RGO films based on chemical reduction result from (i) more effective delocalization of the charge carriers, (ii) more numerous localized states near the Fermi energy, and (iii) a longer optimum hopping distance, compared to those for films based on solvothermal reduction.

UR - http://www.scopus.com/inward/record.url?scp=80052070607&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80052070607&partnerID=8YFLogxK

U2 - 10.1039/c1jm11691f

DO - 10.1039/c1jm11691f

M3 - Article

AN - SCOPUS:80052070607

VL - 21

SP - 13068

EP - 13073

JO - Journal of Materials Chemistry

JF - Journal of Materials Chemistry

SN - 0959-9428

IS - 34

ER -