Low-voltage ultraviolet detectors using ZnO thin-film transistor isolated by B ion implantation

Heesun Bae; Seongil Im; Jonghan Song

doi:10.1143/JJAP.47.5362

Low-voltage ultraviolet detectors using ZnO thin-film transistor isolated by B ion implantation

Heesun Bae, Seongil Im, Jonghan Song

Department of Physics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We report on the fabrication of a photo-detector and a photo-inverter adopting ZnO thin-film transistors (TFTs) that have been electrically isolated by implanting B ions onto peripheral ZnO area around active ZnO channel. Our isolated ZnO-TFT exhibited a fine mobility of 0.8cm²/(V-s) and on/off current ratio of ∼10⁴. Since the device also showed quite a high threshold voltage of 21 V, it was effective to be a photo-detector under a zero gate bias. When our photo-devices were composed of a ZnO-TFT and a 100 MΩ resistor, a minimum response time of ∼5ms under 364 nm ultraviolet light was achieved, thereby dynamically showing photo-inverting and detecting behaviors.

Original language	English
Pages (from-to)	5362-5364
Number of pages	3
Journal	Japanese journal of applied physics
Volume	47
Issue number	7 PART 1
DOIs	https://doi.org/10.1143/JJAP.47.5362
Publication status	Published - 2008 Jul 11

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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abstract = "We report on the fabrication of a photo-detector and a photo-inverter adopting ZnO thin-film transistors (TFTs) that have been electrically isolated by implanting B ions onto peripheral ZnO area around active ZnO channel. Our isolated ZnO-TFT exhibited a fine mobility of 0.8cm2/(V-s) and on/off current ratio of ∼104. Since the device also showed quite a high threshold voltage of 21 V, it was effective to be a photo-detector under a zero gate bias. When our photo-devices were composed of a ZnO-TFT and a 100 MΩ resistor, a minimum response time of ∼5ms under 364 nm ultraviolet light was achieved, thereby dynamically showing photo-inverting and detecting behaviors.",

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AU - Im, Seongil

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N2 - We report on the fabrication of a photo-detector and a photo-inverter adopting ZnO thin-film transistors (TFTs) that have been electrically isolated by implanting B ions onto peripheral ZnO area around active ZnO channel. Our isolated ZnO-TFT exhibited a fine mobility of 0.8cm2/(V-s) and on/off current ratio of ∼104. Since the device also showed quite a high threshold voltage of 21 V, it was effective to be a photo-detector under a zero gate bias. When our photo-devices were composed of a ZnO-TFT and a 100 MΩ resistor, a minimum response time of ∼5ms under 364 nm ultraviolet light was achieved, thereby dynamically showing photo-inverting and detecting behaviors.

AB - We report on the fabrication of a photo-detector and a photo-inverter adopting ZnO thin-film transistors (TFTs) that have been electrically isolated by implanting B ions onto peripheral ZnO area around active ZnO channel. Our isolated ZnO-TFT exhibited a fine mobility of 0.8cm2/(V-s) and on/off current ratio of ∼104. Since the device also showed quite a high threshold voltage of 21 V, it was effective to be a photo-detector under a zero gate bias. When our photo-devices were composed of a ZnO-TFT and a 100 MΩ resistor, a minimum response time of ∼5ms under 364 nm ultraviolet light was achieved, thereby dynamically showing photo-inverting and detecting behaviors.

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Low-voltage ultraviolet detectors using ZnO thin-film transistor isolated by B ion implantation

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