Lowerature Ohmic Contact to Monolayer MoS2 by van der Waals Bonded Co/h-BN Electrodes

Xu Cui, En Min Shih, Luis A. Jauregui, Sang Hoon Chae, Young Duck Kim, Baichang Li, Dongjea Seo, Kateryna Pistunova, Jun Yin, Ji Hoon Park, Heon-Jin Choi, Young Hee Lee, Kenji Watanabe, Takashi Taniguchi, Philip Kim, Cory R. Dean, James C. Hone

Research output: Contribution to journalArticle

74 Citations (Scopus)

Abstract

Monolayer MoS2, among many other transition metal dichalcogenides, holds great promise for future applications in nanoelectronics and optoelectronics due to its ultrathin nature, flexibility, sizable band gap, and unique spin-valley coupled physics. However, careful study of these properties at low temperature has been hindered by an inability to achieve lowerature Ohmic contacts to monolayer MoS2, particularly at low carrier densities. In this work, we report a new contact scheme that utilizes cobalt (Co) with a monolayer of hexagonal boron nitride (h-BN) that has the following two functions: modifies the work function of Co and acts as a tunneling barrier. We measure a flat-band Schottky barrier of 16 meV, which makes thin tunnel barriers upon doping the channels, and thus achieve low-T contact resistance of 3 kÎ.μm at a carrier density of 5.3 × 1012/cm2. This further allows us to observe Shubnikov-de Haas oscillations in monolayer MoS2 at much lower carrier densities compared to previous work.

Original languageEnglish
Pages (from-to)4781-4786
Number of pages6
JournalNano letters
Volume17
Issue number8
DOIs
Publication statusPublished - 2017 Aug 9

Fingerprint

Boron nitride
Ohmic contacts
boron nitrides
Cobalt
electric contacts
Monolayers
cobalt
Carrier concentration
Electrodes
electrodes
contact resistance
Nanoelectronics
valleys
tunnels
flexibility
Contact resistance
transition metals
Optoelectronic devices
Transition metals
Tunnels

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Cui, X., Shih, E. M., Jauregui, L. A., Chae, S. H., Kim, Y. D., Li, B., ... Hone, J. C. (2017). Lowerature Ohmic Contact to Monolayer MoS2 by van der Waals Bonded Co/h-BN Electrodes. Nano letters, 17(8), 4781-4786. https://doi.org/10.1021/acs.nanolett.7b01536
Cui, Xu ; Shih, En Min ; Jauregui, Luis A. ; Chae, Sang Hoon ; Kim, Young Duck ; Li, Baichang ; Seo, Dongjea ; Pistunova, Kateryna ; Yin, Jun ; Park, Ji Hoon ; Choi, Heon-Jin ; Lee, Young Hee ; Watanabe, Kenji ; Taniguchi, Takashi ; Kim, Philip ; Dean, Cory R. ; Hone, James C. / Lowerature Ohmic Contact to Monolayer MoS2 by van der Waals Bonded Co/h-BN Electrodes. In: Nano letters. 2017 ; Vol. 17, No. 8. pp. 4781-4786.
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Cui, X, Shih, EM, Jauregui, LA, Chae, SH, Kim, YD, Li, B, Seo, D, Pistunova, K, Yin, J, Park, JH, Choi, H-J, Lee, YH, Watanabe, K, Taniguchi, T, Kim, P, Dean, CR & Hone, JC 2017, 'Lowerature Ohmic Contact to Monolayer MoS2 by van der Waals Bonded Co/h-BN Electrodes', Nano letters, vol. 17, no. 8, pp. 4781-4786. https://doi.org/10.1021/acs.nanolett.7b01536

Lowerature Ohmic Contact to Monolayer MoS2 by van der Waals Bonded Co/h-BN Electrodes. / Cui, Xu; Shih, En Min; Jauregui, Luis A.; Chae, Sang Hoon; Kim, Young Duck; Li, Baichang; Seo, Dongjea; Pistunova, Kateryna; Yin, Jun; Park, Ji Hoon; Choi, Heon-Jin; Lee, Young Hee; Watanabe, Kenji; Taniguchi, Takashi; Kim, Philip; Dean, Cory R.; Hone, James C.

In: Nano letters, Vol. 17, No. 8, 09.08.2017, p. 4781-4786.

Research output: Contribution to journalArticle

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T1 - Lowerature Ohmic Contact to Monolayer MoS2 by van der Waals Bonded Co/h-BN Electrodes

AU - Cui, Xu

AU - Shih, En Min

AU - Jauregui, Luis A.

AU - Chae, Sang Hoon

AU - Kim, Young Duck

AU - Li, Baichang

AU - Seo, Dongjea

AU - Pistunova, Kateryna

AU - Yin, Jun

AU - Park, Ji Hoon

AU - Choi, Heon-Jin

AU - Lee, Young Hee

AU - Watanabe, Kenji

AU - Taniguchi, Takashi

AU - Kim, Philip

AU - Dean, Cory R.

AU - Hone, James C.

PY - 2017/8/9

Y1 - 2017/8/9

N2 - Monolayer MoS2, among many other transition metal dichalcogenides, holds great promise for future applications in nanoelectronics and optoelectronics due to its ultrathin nature, flexibility, sizable band gap, and unique spin-valley coupled physics. However, careful study of these properties at low temperature has been hindered by an inability to achieve lowerature Ohmic contacts to monolayer MoS2, particularly at low carrier densities. In this work, we report a new contact scheme that utilizes cobalt (Co) with a monolayer of hexagonal boron nitride (h-BN) that has the following two functions: modifies the work function of Co and acts as a tunneling barrier. We measure a flat-band Schottky barrier of 16 meV, which makes thin tunnel barriers upon doping the channels, and thus achieve low-T contact resistance of 3 kÎ.μm at a carrier density of 5.3 × 1012/cm2. This further allows us to observe Shubnikov-de Haas oscillations in monolayer MoS2 at much lower carrier densities compared to previous work.

AB - Monolayer MoS2, among many other transition metal dichalcogenides, holds great promise for future applications in nanoelectronics and optoelectronics due to its ultrathin nature, flexibility, sizable band gap, and unique spin-valley coupled physics. However, careful study of these properties at low temperature has been hindered by an inability to achieve lowerature Ohmic contacts to monolayer MoS2, particularly at low carrier densities. In this work, we report a new contact scheme that utilizes cobalt (Co) with a monolayer of hexagonal boron nitride (h-BN) that has the following two functions: modifies the work function of Co and acts as a tunneling barrier. We measure a flat-band Schottky barrier of 16 meV, which makes thin tunnel barriers upon doping the channels, and thus achieve low-T contact resistance of 3 kÎ.μm at a carrier density of 5.3 × 1012/cm2. This further allows us to observe Shubnikov-de Haas oscillations in monolayer MoS2 at much lower carrier densities compared to previous work.

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U2 - 10.1021/acs.nanolett.7b01536

DO - 10.1021/acs.nanolett.7b01536

M3 - Article

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JO - Nano Letters

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