Lowering contact resistance by SWCNT-Al bilayer electrodes in solution processable metal-oxide thin film transistor

Su Jeong Lee, Tae Il Lee, Jee Ho Park, Il Kwon Oh, Hyungjun Kim, Jung Han Kim, Chul Hong Kim, Gee Sung Chae, Hong Koo Baik, Jae Min Myoung

Research output: Contribution to journalArticle

2 Citations (Scopus)


A single-wall carbon nanotube-aluminium (SWCNT)-Al bilayer was developed as an electrode for a high-performance solution processable thin film transistor (TFT). The contact resistance was systematically lowered by inserting an Al layer between the SWCNTs and the indium oxide. The performance of the device was considerably enhanced by adopting the SWCNT-Al bilayer electrodes, because of the enlargement of the contact area of the electrodes and the formation of an Ohmic contact between the electrodes and the semiconductor. The TFT using the SWCNT-Al bilayer electrodes shows a threshold voltage of 0.45 V, a mobility of 4.50 cm2 V-1 s and an Ion/Ioff of 6.86 × 105.

Original languageEnglish
Pages (from-to)1403-1407
Number of pages5
JournalJournal of Materials Chemistry C
Issue number6
Publication statusPublished - 2015 Feb 14


All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

Cite this