LPE Growth and Phase Stability of In1–xGaxP at 740 °C

J. S. Choi, H. S. Lyou, B. S. Jeong, Soo Kyung Chang, H. L. Park

Research output: Contribution to journalArticle

4 Citations (Scopus)
Original languageEnglish
Pages (from-to)K27-K30
Journalphysica status solidi (a)
Volume125
Issue number1
DOIs
Publication statusPublished - 1991 Jan 1

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Phase stability
Crystal growth
Semiconductor lasers
crystal growth
semiconductor lasers

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Choi, J. S. ; Lyou, H. S. ; Jeong, B. S. ; Chang, Soo Kyung ; Park, H. L. / LPE Growth and Phase Stability of In1–xGaxP at 740 °C. In: physica status solidi (a). 1991 ; Vol. 125, No. 1. pp. K27-K30.
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LPE Growth and Phase Stability of In1–xGaxP at 740 °C. / Choi, J. S.; Lyou, H. S.; Jeong, B. S.; Chang, Soo Kyung; Park, H. L.

In: physica status solidi (a), Vol. 125, No. 1, 01.01.1991, p. K27-K30.

Research output: Contribution to journalArticle

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