LPE Growth and Phase Stability of In1–xGaxP at 740 °C

J. S. Choi; H. S. Lyou; B. S. Jeong; S. K. Chang; H. L. Park

doi:10.1002/pssa.2211250144

LPE Growth and Phase Stability of In_1–xGa_xP at 740 °C

J. S. Choi, H. S. Lyou, B. S. Jeong, S. K. Chang, H. L. Park

Department of Physics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Original language	English
Pages (from-to)	K27-K30
Journal	physica status solidi (a)
Volume	125
Issue number	1
DOIs	https://doi.org/10.1002/pssa.2211250144
Publication status	Published - 1991 May 16

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1002/pssa.2211250144

Cite this

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title = "LPE Growth and Phase Stability of In1–xGaxP at 740 °C",

author = "Choi, {J. S.} and Lyou, {H. S.} and Jeong, {B. S.} and Chang, {S. K.} and Park, {H. L.}",

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AU - Park, H. L.

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LPE Growth and Phase Stability of In1–xGaxP at 740 °C

All Science Journal Classification (ASJC) codes

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LPE Growth and Phase Stability of In_1–xGa_xP at 740 °C