Lg = 50 nm Gate-All-Around In0.53Ga0.47As Nanosheet MOSFETs with Regrown In0.53Ga0.47As Contacts

In Geun Lee, Hyeon Bhin Jo, Ji Min Baek, Sang Tae Lee, Su Min Choi, Hyo Jin Kim, Wan Soo Park, Ji Hoon Yoo, Dae Hong Ko, Tae Woo Kim, Sang Kuk Kim, Jae Gyu Kim, Jacob Yun, Ted Kim, Jung Hee Lee, Chan Soo Shin, Jae Hak Lee, Kwang Seok Seo, Dae Hyun Kim

Research output: Contribution to journalArticlepeer-review


In this paper, we report the fabrication and characterization of Lg = 50 nm Gate-All-Around (GAA) In0.53Ga0.47As nanosheet (NS) metal-oxide-semiconductor field-effect transistors (MOSFETs) with sub-20 nm nanosheet thickness that were fabricated through an S/D regrowth process. The fabricated GAA In0.53Ga0.47As NS MOSFETs feature a bi-layer high-k dielectric layer of Al2O3/HfO2, together with an ALD-grown TiN metal-gate in a cross-coupled manner. The device with Lg = 50 nm, WNS = 200 nm and tNS = 10 nm exhibited an excellent combination of subthreshold-swing behavior (S < 80 mV/dec.) and carrier transport properties (gm_max = 1.86 mS/μm and ION = 0.4 mA/μm) at VDS = 0.5 V. To the best of our knowledge, this is the first demonstration of InxGa1-xAs GAA NS MOSFETs that would be directly applicable for their use in future multi-bridged channel (MBC) devices.

Original languageEnglish
Article number2744
JournalElectronics (Switzerland)
Issue number17
Publication statusPublished - 2022 Sept

Bibliographical note

Funding Information:
This work was supported by the Nano-Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (NRF-2017M3A7B4049517).

Publisher Copyright:
© 2022 by the authors.

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Signal Processing
  • Hardware and Architecture
  • Computer Networks and Communications
  • Electrical and Electronic Engineering


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