In this paper, we report the fabrication and characterization of Lg = 50 nm Gate-All-Around (GAA) In0.53Ga0.47As nanosheet (NS) metal-oxide-semiconductor field-effect transistors (MOSFETs) with sub-20 nm nanosheet thickness that were fabricated through an S/D regrowth process. The fabricated GAA In0.53Ga0.47As NS MOSFETs feature a bi-layer high-k dielectric layer of Al2O3/HfO2, together with an ALD-grown TiN metal-gate in a cross-coupled manner. The device with Lg = 50 nm, WNS = 200 nm and tNS = 10 nm exhibited an excellent combination of subthreshold-swing behavior (S < 80 mV/dec.) and carrier transport properties (gm_max = 1.86 mS/μm and ION = 0.4 mA/μm) at VDS = 0.5 V. To the best of our knowledge, this is the first demonstration of InxGa1-xAs GAA NS MOSFETs that would be directly applicable for their use in future multi-bridged channel (MBC) devices.
|Publication status||Published - 2022 Sept|
Bibliographical noteFunding Information:
This work was supported by the Nano-Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (NRF-2017M3A7B4049517).
© 2022 by the authors.
All Science Journal Classification (ASJC) codes
- Control and Systems Engineering
- Signal Processing
- Hardware and Architecture
- Computer Networks and Communications
- Electrical and Electronic Engineering