Luminescence and ultrafast phenomena in InGaN multiple quantum wells

Annamraju Kasi Viswanath, J. I. Lee, S. T. Kim, G. M. Yang, H. J. Lee, Dongho Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

High quality In0.13Ga0.87N/GaN multiple quantum wells (MQWs) on (0001) sapphire substrate were fabricated by MOCVD method. The quantum well thickness is as thin as 10 Å, and the barrier thickness is 50 Å. We have investigated these ultrathin MQWs by continuous wave (cw) and time-resolved spectroscopy in the picosecond time scales in a wide temperature range from 10 to 290 K. In the luminescence spectrum at 10 K, we observed a broad peak at 3.134 eV which was attributed to the quantum wells emission of InGaN. The full width at half maximum of this peak was 129 meV at 10 K and the broadening at low temperatures which was mostly inhomogeneous was thought to be due to compositional fluctuations and interfacial disorder in the alloy. We also observed an intense and narrow peak at 3.471 eV due to the GaN barrier. The temperature dependence of the luminescence was studied and the peak positions and the intensities of the different peaks were obtained. The activation energy of the InGaN quantum well emission peak was estimated as 69 meV. From the measurements of luminescence intensities and lifetimes at various temperatures, radiative and non-radiative recombination lifetimes were deduced. The results were explained by considering only the localization of the excitons due to potential fluctuations.

Original languageEnglish
Pages (from-to)4401-4404
Number of pages4
JournalThin Solid Films
Volume515
Issue number10
DOIs
Publication statusPublished - 2007 Mar 26

Fingerprint

Ultrafast phenomena
Semiconductor quantum wells
Luminescence
quantum wells
luminescence
Temperature
Aluminum Oxide
Metallorganic chemical vapor deposition
life (durability)
Full width at half maximum
Sapphire
Excitons
radiative recombination
Activation energy
continuous radiation
metalorganic chemical vapor deposition
Spectroscopy
sapphire
excitons
disorders

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Viswanath, A. K., Lee, J. I., Kim, S. T., Yang, G. M., Lee, H. J., & Kim, D. (2007). Luminescence and ultrafast phenomena in InGaN multiple quantum wells. Thin Solid Films, 515(10), 4401-4404. https://doi.org/10.1016/j.tsf.2006.07.110
Viswanath, Annamraju Kasi ; Lee, J. I. ; Kim, S. T. ; Yang, G. M. ; Lee, H. J. ; Kim, Dongho. / Luminescence and ultrafast phenomena in InGaN multiple quantum wells. In: Thin Solid Films. 2007 ; Vol. 515, No. 10. pp. 4401-4404.
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abstract = "High quality In0.13Ga0.87N/GaN multiple quantum wells (MQWs) on (0001) sapphire substrate were fabricated by MOCVD method. The quantum well thickness is as thin as 10 {\AA}, and the barrier thickness is 50 {\AA}. We have investigated these ultrathin MQWs by continuous wave (cw) and time-resolved spectroscopy in the picosecond time scales in a wide temperature range from 10 to 290 K. In the luminescence spectrum at 10 K, we observed a broad peak at 3.134 eV which was attributed to the quantum wells emission of InGaN. The full width at half maximum of this peak was 129 meV at 10 K and the broadening at low temperatures which was mostly inhomogeneous was thought to be due to compositional fluctuations and interfacial disorder in the alloy. We also observed an intense and narrow peak at 3.471 eV due to the GaN barrier. The temperature dependence of the luminescence was studied and the peak positions and the intensities of the different peaks were obtained. The activation energy of the InGaN quantum well emission peak was estimated as 69 meV. From the measurements of luminescence intensities and lifetimes at various temperatures, radiative and non-radiative recombination lifetimes were deduced. The results were explained by considering only the localization of the excitons due to potential fluctuations.",
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Viswanath, AK, Lee, JI, Kim, ST, Yang, GM, Lee, HJ & Kim, D 2007, 'Luminescence and ultrafast phenomena in InGaN multiple quantum wells', Thin Solid Films, vol. 515, no. 10, pp. 4401-4404. https://doi.org/10.1016/j.tsf.2006.07.110

Luminescence and ultrafast phenomena in InGaN multiple quantum wells. / Viswanath, Annamraju Kasi; Lee, J. I.; Kim, S. T.; Yang, G. M.; Lee, H. J.; Kim, Dongho.

In: Thin Solid Films, Vol. 515, No. 10, 26.03.2007, p. 4401-4404.

Research output: Contribution to journalArticle

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T1 - Luminescence and ultrafast phenomena in InGaN multiple quantum wells

AU - Viswanath, Annamraju Kasi

AU - Lee, J. I.

AU - Kim, S. T.

AU - Yang, G. M.

AU - Lee, H. J.

AU - Kim, Dongho

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AB - High quality In0.13Ga0.87N/GaN multiple quantum wells (MQWs) on (0001) sapphire substrate were fabricated by MOCVD method. The quantum well thickness is as thin as 10 Å, and the barrier thickness is 50 Å. We have investigated these ultrathin MQWs by continuous wave (cw) and time-resolved spectroscopy in the picosecond time scales in a wide temperature range from 10 to 290 K. In the luminescence spectrum at 10 K, we observed a broad peak at 3.134 eV which was attributed to the quantum wells emission of InGaN. The full width at half maximum of this peak was 129 meV at 10 K and the broadening at low temperatures which was mostly inhomogeneous was thought to be due to compositional fluctuations and interfacial disorder in the alloy. We also observed an intense and narrow peak at 3.471 eV due to the GaN barrier. The temperature dependence of the luminescence was studied and the peak positions and the intensities of the different peaks were obtained. The activation energy of the InGaN quantum well emission peak was estimated as 69 meV. From the measurements of luminescence intensities and lifetimes at various temperatures, radiative and non-radiative recombination lifetimes were deduced. The results were explained by considering only the localization of the excitons due to potential fluctuations.

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