Luminescence properties of Si nanocrystals fabricated on Si substrate by pulsed laser deposition

Sang Hyuck Bae, Sang Yeol Lee, Hyun Young Kim, Seongil Im

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

Si nanocrystals on p-type (1 0 0) Si substrates have been fabricated by pulsed laser deposition (PLD) technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was varied from 1 to 3 Torr. After deposition, Si nanocrystals have been annealed again in various gases. Nitrogen and oxygen have been used. Strong violet-indigo photoluminescence (PL) have been observed from Si nanocrystals annealed in nitrogen ambient gas. As the gas pressure during the deposition is varied, weak green and red emissions from annealed Si nanocrystals are also observed in the PL.

Original languageEnglish
Pages (from-to)87-90
Number of pages4
JournalOptical Materials
Volume17
Issue number1-2
DOIs
Publication statusPublished - 2001 Jan 1
EventOptoelectronics I: Materials and Technologies for Optoelectronic Devices - Strasbourg, France
Duration: 2000 May 302000 Jun 2

Fingerprint

Pulsed laser deposition
Nanocrystals
pulsed laser deposition
Luminescence
nanocrystals
Gases
luminescence
Substrates
Photoluminescence
Nitrogen
gases
Indigo Carmine
photoluminescence
nitrogen
gas pressure
YAG lasers
Oxygen
Lasers
oxygen

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Computer Science(all)
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering

Cite this

Bae, Sang Hyuck ; Lee, Sang Yeol ; Kim, Hyun Young ; Im, Seongil. / Luminescence properties of Si nanocrystals fabricated on Si substrate by pulsed laser deposition. In: Optical Materials. 2001 ; Vol. 17, No. 1-2. pp. 87-90.
@article{fc0ccbeefcdc4cadbdace6b59616f3b6,
title = "Luminescence properties of Si nanocrystals fabricated on Si substrate by pulsed laser deposition",
abstract = "Si nanocrystals on p-type (1 0 0) Si substrates have been fabricated by pulsed laser deposition (PLD) technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was varied from 1 to 3 Torr. After deposition, Si nanocrystals have been annealed again in various gases. Nitrogen and oxygen have been used. Strong violet-indigo photoluminescence (PL) have been observed from Si nanocrystals annealed in nitrogen ambient gas. As the gas pressure during the deposition is varied, weak green and red emissions from annealed Si nanocrystals are also observed in the PL.",
author = "Bae, {Sang Hyuck} and Lee, {Sang Yeol} and Kim, {Hyun Young} and Seongil Im",
year = "2001",
month = "1",
day = "1",
doi = "10.1016/S0925-3467(01)00025-8",
language = "English",
volume = "17",
pages = "87--90",
journal = "Optical Materials",
issn = "0925-3467",
publisher = "Elsevier",
number = "1-2",

}

Luminescence properties of Si nanocrystals fabricated on Si substrate by pulsed laser deposition. / Bae, Sang Hyuck; Lee, Sang Yeol; Kim, Hyun Young; Im, Seongil.

In: Optical Materials, Vol. 17, No. 1-2, 01.01.2001, p. 87-90.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Luminescence properties of Si nanocrystals fabricated on Si substrate by pulsed laser deposition

AU - Bae, Sang Hyuck

AU - Lee, Sang Yeol

AU - Kim, Hyun Young

AU - Im, Seongil

PY - 2001/1/1

Y1 - 2001/1/1

N2 - Si nanocrystals on p-type (1 0 0) Si substrates have been fabricated by pulsed laser deposition (PLD) technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was varied from 1 to 3 Torr. After deposition, Si nanocrystals have been annealed again in various gases. Nitrogen and oxygen have been used. Strong violet-indigo photoluminescence (PL) have been observed from Si nanocrystals annealed in nitrogen ambient gas. As the gas pressure during the deposition is varied, weak green and red emissions from annealed Si nanocrystals are also observed in the PL.

AB - Si nanocrystals on p-type (1 0 0) Si substrates have been fabricated by pulsed laser deposition (PLD) technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was varied from 1 to 3 Torr. After deposition, Si nanocrystals have been annealed again in various gases. Nitrogen and oxygen have been used. Strong violet-indigo photoluminescence (PL) have been observed from Si nanocrystals annealed in nitrogen ambient gas. As the gas pressure during the deposition is varied, weak green and red emissions from annealed Si nanocrystals are also observed in the PL.

UR - http://www.scopus.com/inward/record.url?scp=0035361126&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035361126&partnerID=8YFLogxK

U2 - 10.1016/S0925-3467(01)00025-8

DO - 10.1016/S0925-3467(01)00025-8

M3 - Conference article

VL - 17

SP - 87

EP - 90

JO - Optical Materials

JF - Optical Materials

SN - 0925-3467

IS - 1-2

ER -