Luminescence properties of Si nanocrystals fabricated on Si substrate by pulsed laser deposition

Sang Hyuck Bae, Sang Yeol Lee, Hyun Young Kim, Seongil Im

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

Si nanocrystals on p-type (1 0 0) Si substrates have been fabricated by pulsed laser deposition (PLD) technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was varied from 1 to 3 Torr. After deposition, Si nanocrystals have been annealed again in various gases. Nitrogen and oxygen have been used. Strong violet-indigo photoluminescence (PL) have been observed from Si nanocrystals annealed in nitrogen ambient gas. As the gas pressure during the deposition is varied, weak green and red emissions from annealed Si nanocrystals are also observed in the PL.

Original languageEnglish
Pages (from-to)87-90
Number of pages4
JournalOptical Materials
Volume17
Issue number1-2
DOIs
Publication statusPublished - 2001 Jun
EventOptoelectronics I: Materials and Technologies for Optoelectronic Devices - Strasbourg, France
Duration: 2000 May 302000 Jun 2

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Computer Science(all)
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering

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