Luminescent mechanism of Eu3+-doped epitaxial Gd 2O3 films grown on a Si (111) substrate using an effusion cell

Moon Hyung Jang, Yoon Ki Choi, Kwun Bum Chung, Hyeongtag Jeon, Mann-Ho Cho

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Eu3+-doped epitaxial Gd2O3 (111) films with well-ordered crystalline structures were grown on oxidized Si (111) using the physical vapor deposition method. The mole fraction (x) of Eu3+ in Gd2-xO3:Eu3+x ranged from 0.02 to 0.22. The photoluminescence characteristics, measured at an excitation wavelength of 254 nm, showed that even at the very low Eu3+ concentration, x = 0.18, the 5D07F 2 transition occurred at the maximum 612-nm emission. Based on the critical distance calculated using the decay curves at 612 nm, we proved that the 5D07F2 transition of the Gd2O3:Eu3+ originated from an electric dipole-dipole transition. In addition, the critical distance (Rc) was greater than that reported previously due to the perfectly crystalline film. This significantly decreases the mole fraction which maximize the photoluminescence intensity because the non-radiative transition is much lower than that of the chemically synthesized Gd2O3:Eu 3+.

Original languageEnglish
Pages (from-to)1001-1005
Number of pages5
JournalCurrent Applied Physics
Volume11
Issue number4
DOIs
Publication statusPublished - 2011 Jul 1

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Photoluminescence
Crystalline materials
Physical vapor deposition
Substrates
cells
photoluminescence
Wavelength
electric dipoles
low concentrations
vapor deposition
dipoles
decay
curves
wavelengths
excitation

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Jang, Moon Hyung ; Choi, Yoon Ki ; Chung, Kwun Bum ; Jeon, Hyeongtag ; Cho, Mann-Ho. / Luminescent mechanism of Eu3+-doped epitaxial Gd 2O3 films grown on a Si (111) substrate using an effusion cell. In: Current Applied Physics. 2011 ; Vol. 11, No. 4. pp. 1001-1005.
@article{60df938646a94ce7aa5534d8152e000e,
title = "Luminescent mechanism of Eu3+-doped epitaxial Gd 2O3 films grown on a Si (111) substrate using an effusion cell",
abstract = "Eu3+-doped epitaxial Gd2O3 (111) films with well-ordered crystalline structures were grown on oxidized Si (111) using the physical vapor deposition method. The mole fraction (x) of Eu3+ in Gd2-xO3:Eu3+x ranged from 0.02 to 0.22. The photoluminescence characteristics, measured at an excitation wavelength of 254 nm, showed that even at the very low Eu3+ concentration, x = 0.18, the 5D0 → 7F 2 transition occurred at the maximum 612-nm emission. Based on the critical distance calculated using the decay curves at 612 nm, we proved that the 5D0 → 7F2 transition of the Gd2O3:Eu3+ originated from an electric dipole-dipole transition. In addition, the critical distance (Rc) was greater than that reported previously due to the perfectly crystalline film. This significantly decreases the mole fraction which maximize the photoluminescence intensity because the non-radiative transition is much lower than that of the chemically synthesized Gd2O3:Eu 3+.",
author = "Jang, {Moon Hyung} and Choi, {Yoon Ki} and Chung, {Kwun Bum} and Hyeongtag Jeon and Mann-Ho Cho",
year = "2011",
month = "7",
day = "1",
doi = "10.1016/j.cap.2011.01.010",
language = "English",
volume = "11",
pages = "1001--1005",
journal = "Current Applied Physics",
issn = "1567-1739",
publisher = "Elsevier",
number = "4",

}

Luminescent mechanism of Eu3+-doped epitaxial Gd 2O3 films grown on a Si (111) substrate using an effusion cell. / Jang, Moon Hyung; Choi, Yoon Ki; Chung, Kwun Bum; Jeon, Hyeongtag; Cho, Mann-Ho.

In: Current Applied Physics, Vol. 11, No. 4, 01.07.2011, p. 1001-1005.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Luminescent mechanism of Eu3+-doped epitaxial Gd 2O3 films grown on a Si (111) substrate using an effusion cell

AU - Jang, Moon Hyung

AU - Choi, Yoon Ki

AU - Chung, Kwun Bum

AU - Jeon, Hyeongtag

AU - Cho, Mann-Ho

PY - 2011/7/1

Y1 - 2011/7/1

N2 - Eu3+-doped epitaxial Gd2O3 (111) films with well-ordered crystalline structures were grown on oxidized Si (111) using the physical vapor deposition method. The mole fraction (x) of Eu3+ in Gd2-xO3:Eu3+x ranged from 0.02 to 0.22. The photoluminescence characteristics, measured at an excitation wavelength of 254 nm, showed that even at the very low Eu3+ concentration, x = 0.18, the 5D0 → 7F 2 transition occurred at the maximum 612-nm emission. Based on the critical distance calculated using the decay curves at 612 nm, we proved that the 5D0 → 7F2 transition of the Gd2O3:Eu3+ originated from an electric dipole-dipole transition. In addition, the critical distance (Rc) was greater than that reported previously due to the perfectly crystalline film. This significantly decreases the mole fraction which maximize the photoluminescence intensity because the non-radiative transition is much lower than that of the chemically synthesized Gd2O3:Eu 3+.

AB - Eu3+-doped epitaxial Gd2O3 (111) films with well-ordered crystalline structures were grown on oxidized Si (111) using the physical vapor deposition method. The mole fraction (x) of Eu3+ in Gd2-xO3:Eu3+x ranged from 0.02 to 0.22. The photoluminescence characteristics, measured at an excitation wavelength of 254 nm, showed that even at the very low Eu3+ concentration, x = 0.18, the 5D0 → 7F 2 transition occurred at the maximum 612-nm emission. Based on the critical distance calculated using the decay curves at 612 nm, we proved that the 5D0 → 7F2 transition of the Gd2O3:Eu3+ originated from an electric dipole-dipole transition. In addition, the critical distance (Rc) was greater than that reported previously due to the perfectly crystalline film. This significantly decreases the mole fraction which maximize the photoluminescence intensity because the non-radiative transition is much lower than that of the chemically synthesized Gd2O3:Eu 3+.

UR - http://www.scopus.com/inward/record.url?scp=79957566073&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79957566073&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2011.01.010

DO - 10.1016/j.cap.2011.01.010

M3 - Article

AN - SCOPUS:79957566073

VL - 11

SP - 1001

EP - 1005

JO - Current Applied Physics

JF - Current Applied Physics

SN - 1567-1739

IS - 4

ER -