Magnetic and electrical properties of single-crystalline mn-doped Ge nanowires

Han Kyu Seong; Ungkil Kim; Eun Kyung Jeon; Tae Eon Park; Hwangyou Oh; Tae Hyun Lee; Ju Jin Kim; Heon Jin Choi; Jae Young Kim

doi:10.1021/jp806244g

Magnetic and electrical properties of single-crystalline mn-doped Ge nanowires

Han Kyu Seong, Ungkil Kim, Eun Kyung Jeon, Tae Eon Park, Hwangyou Oh, Tae Hyun Lee, Ju Jin Kim, Heon Jin Choi, Jae Young Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

We report on synthesis of Mn-doped Ge nanowires and their magnetic and electrical properties. The nanowires were grown on the silicon substrate by vapor-liquid-solid mechanism using Au as catalyst and GeCl₄ and MnCl₂ as precursor. Anomalous X-ray scattering measurement makes it clear that Mn atoms are substitutionally incorporated with the diamond network of host Ge sites. Superconducting quantum interference device characterization indicated that the nanowires possess ferromagnetism up to room temperature. X-ray magnetic circular dichroism spectra at Mn L_2,3-edges showed that doped Mn has local spin moment with the 3d⁵ electronic configuration above room temperature, meaning that the ferromagnetism originates from doped Mn²⁺ ions. Electrical characterization of a nanowire field effect transistor revealed the improved p-type behavior with hole mobility of 4.95 cm²/V.s.

Original language	English
Pages (from-to)	10847-10852
Number of pages	6
Journal	Journal of Physical Chemistry C
Volume	113
Issue number	25
DOIs	https://doi.org/10.1021/jp806244g
Publication status	Published - 2009 Jun 25

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Energy(all)
Physical and Theoretical Chemistry
Surfaces, Coatings and Films

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title = "Magnetic and electrical properties of single-crystalline mn-doped Ge nanowires",

abstract = "We report on synthesis of Mn-doped Ge nanowires and their magnetic and electrical properties. The nanowires were grown on the silicon substrate by vapor-liquid-solid mechanism using Au as catalyst and GeCl4 and MnCl2 as precursor. Anomalous X-ray scattering measurement makes it clear that Mn atoms are substitutionally incorporated with the diamond network of host Ge sites. Superconducting quantum interference device characterization indicated that the nanowires possess ferromagnetism up to room temperature. X-ray magnetic circular dichroism spectra at Mn L2,3-edges showed that doped Mn has local spin moment with the 3d5 electronic configuration above room temperature, meaning that the ferromagnetism originates from doped Mn2+ ions. Electrical characterization of a nanowire field effect transistor revealed the improved p-type behavior with hole mobility of 4.95 cm2/V.s.",

author = "Seong, {Han Kyu} and Ungkil Kim and Jeon, {Eun Kyung} and Park, {Tae Eon} and Hwangyou Oh and Lee, {Tae Hyun} and Kim, {Ju Jin} and Choi, {Heon Jin} and Kim, {Jae Young}",

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T1 - Magnetic and electrical properties of single-crystalline mn-doped Ge nanowires

AU - Seong, Han Kyu

AU - Kim, Ungkil

AU - Jeon, Eun Kyung

AU - Park, Tae Eon

AU - Oh, Hwangyou

AU - Lee, Tae Hyun

AU - Kim, Ju Jin

AU - Choi, Heon Jin

AU - Kim, Jae Young

PY - 2009/6/25

Y1 - 2009/6/25

N2 - We report on synthesis of Mn-doped Ge nanowires and their magnetic and electrical properties. The nanowires were grown on the silicon substrate by vapor-liquid-solid mechanism using Au as catalyst and GeCl4 and MnCl2 as precursor. Anomalous X-ray scattering measurement makes it clear that Mn atoms are substitutionally incorporated with the diamond network of host Ge sites. Superconducting quantum interference device characterization indicated that the nanowires possess ferromagnetism up to room temperature. X-ray magnetic circular dichroism spectra at Mn L2,3-edges showed that doped Mn has local spin moment with the 3d5 electronic configuration above room temperature, meaning that the ferromagnetism originates from doped Mn2+ ions. Electrical characterization of a nanowire field effect transistor revealed the improved p-type behavior with hole mobility of 4.95 cm2/V.s.

AB - We report on synthesis of Mn-doped Ge nanowires and their magnetic and electrical properties. The nanowires were grown on the silicon substrate by vapor-liquid-solid mechanism using Au as catalyst and GeCl4 and MnCl2 as precursor. Anomalous X-ray scattering measurement makes it clear that Mn atoms are substitutionally incorporated with the diamond network of host Ge sites. Superconducting quantum interference device characterization indicated that the nanowires possess ferromagnetism up to room temperature. X-ray magnetic circular dichroism spectra at Mn L2,3-edges showed that doped Mn has local spin moment with the 3d5 electronic configuration above room temperature, meaning that the ferromagnetism originates from doped Mn2+ ions. Electrical characterization of a nanowire field effect transistor revealed the improved p-type behavior with hole mobility of 4.95 cm2/V.s.

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