Abstract
We report on synthesis of Mn-doped Ge nanowires and their magnetic and electrical properties. The nanowires were grown on the silicon substrate by vapor-liquid-solid mechanism using Au as catalyst and GeCl 4 and MnCl 2 as precursor. Anomalous X-ray scattering measurement makes it clear that Mn atoms are substitutionally incorporated with the diamond network of host Ge sites. Superconducting quantum interference device characterization indicated that the nanowires possess ferromagnetism up to room temperature. X-ray magnetic circular dichroism spectra at Mn L 2,3 -edges showed that doped Mn has local spin moment with the 3d 5 electronic configuration above room temperature, meaning that the ferromagnetism originates from doped Mn 2+ ions. Electrical characterization of a nanowire field effect transistor revealed the improved p-type behavior with hole mobility of 4.95 cm 2 /V.s.
| Original language | English |
|---|---|
| Pages (from-to) | 10847-10852 |
| Number of pages | 6 |
| Journal | Journal of Physical Chemistry C |
| Volume | 113 |
| Issue number | 25 |
| DOIs | |
| Publication status | Published - 2009 Jun 25 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Energy(all)
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films
Cite this
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Magnetic and electrical properties of single-crystalline mn-doped Ge nanowires. / Seong, Han Kyu; Kim, Ungkil; Jeon, Eun Kyung; Park, Tae Eon; Oh, Hwangyou; Lee, Tae Hyun; Kim, Ju Jin; Choi, Heon-Jin; Kim, Jae Young.
In: Journal of Physical Chemistry C, Vol. 113, No. 25, 25.06.2009, p. 10847-10852.Research output: Contribution to journal › Article
TY - JOUR
T1 - Magnetic and electrical properties of single-crystalline mn-doped Ge nanowires
AU - Seong, Han Kyu
AU - Kim, Ungkil
AU - Jeon, Eun Kyung
AU - Park, Tae Eon
AU - Oh, Hwangyou
AU - Lee, Tae Hyun
AU - Kim, Ju Jin
AU - Choi, Heon-Jin
AU - Kim, Jae Young
PY - 2009/6/25
Y1 - 2009/6/25
N2 - We report on synthesis of Mn-doped Ge nanowires and their magnetic and electrical properties. The nanowires were grown on the silicon substrate by vapor-liquid-solid mechanism using Au as catalyst and GeCl 4 and MnCl 2 as precursor. Anomalous X-ray scattering measurement makes it clear that Mn atoms are substitutionally incorporated with the diamond network of host Ge sites. Superconducting quantum interference device characterization indicated that the nanowires possess ferromagnetism up to room temperature. X-ray magnetic circular dichroism spectra at Mn L 2,3 -edges showed that doped Mn has local spin moment with the 3d 5 electronic configuration above room temperature, meaning that the ferromagnetism originates from doped Mn 2+ ions. Electrical characterization of a nanowire field effect transistor revealed the improved p-type behavior with hole mobility of 4.95 cm 2 /V.s.
AB - We report on synthesis of Mn-doped Ge nanowires and their magnetic and electrical properties. The nanowires were grown on the silicon substrate by vapor-liquid-solid mechanism using Au as catalyst and GeCl 4 and MnCl 2 as precursor. Anomalous X-ray scattering measurement makes it clear that Mn atoms are substitutionally incorporated with the diamond network of host Ge sites. Superconducting quantum interference device characterization indicated that the nanowires possess ferromagnetism up to room temperature. X-ray magnetic circular dichroism spectra at Mn L 2,3 -edges showed that doped Mn has local spin moment with the 3d 5 electronic configuration above room temperature, meaning that the ferromagnetism originates from doped Mn 2+ ions. Electrical characterization of a nanowire field effect transistor revealed the improved p-type behavior with hole mobility of 4.95 cm 2 /V.s.
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U2 - 10.1021/jp806244g
DO - 10.1021/jp806244g
M3 - Article
VL - 113
SP - 10847
EP - 10852
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
SN - 1932-7447
IS - 25
ER -