We present the magnetic and magnetotransport properties of epitaxial (Ga,Mn)N films with nominal Mn concentration (x = 0.1-0.73%) grown by plasma-enhanced molecular beam epitaxy (PEMBE). X-ray diffraction (XRD) reveals that (Ga,Mn)N has the single-phase wurtzite structure without secondary phases. The epitaxial (Ga,Mn)N films were found to exhibit n-type conductivity, ferromagnetic ordering with Curie temperature in the range 550 - 700 K, and in-plane magnetic anisotropy. The negative magnetoresistance (MR) was observed at temperatures below 50 K and was found to gradually increase with decreasing temperature.
Bibliographical noteFunding Information:
This work was supported by the Korea Basic Science Institute via Grant No. R23-2001-00020 and the KIST vision 21 Program.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry