Magnetic and magnetotransport properties in the n-type (Ga,Mn)N thin films

Moon Ho Ham, Min Chang Jeong, Wooyoung Lee, Jae Min Myoung, Jeung Mi Lee, Joon Yeon Chang, Suk Hee Han

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We present the magnetic and magnetotransport properties of epitaxial (Ga,Mn)N films with nominal Mn concentration (x = 0.1-0.73%) grown by plasma-enhanced molecular beam epitaxy (PEMBE). X-ray diffraction (XRD) reveals that (Ga,Mn)N has the single-phase wurtzite structure without secondary phases. The epitaxial (Ga,Mn)N films were found to exhibit n-type conductivity, ferromagnetic ordering with Curie temperature in the range 550 - 700 K, and in-plane magnetic anisotropy. The negative magnetoresistance (MR) was observed at temperatures below 50 K and was found to gradually increase with decreasing temperature.

Original languageEnglish
Pages (from-to)114-117
Number of pages4
JournalJournal of Electronic Materials
Volume33
Issue number2
DOIs
Publication statusPublished - 2004 Jan 1

Fingerprint

Galvanomagnetic effects
magnetic properties
Thin films
Magnetic anisotropy
Magnetoresistance
Phase structure
Curie temperature
thin films
Molecular beam epitaxy
wurtzite
molecular beam epitaxy
Plasmas
X ray diffraction
conductivity
Temperature
anisotropy
temperature
diffraction
x rays

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Ham, Moon Ho ; Jeong, Min Chang ; Lee, Wooyoung ; Myoung, Jae Min ; Lee, Jeung Mi ; Chang, Joon Yeon ; Han, Suk Hee. / Magnetic and magnetotransport properties in the n-type (Ga,Mn)N thin films. In: Journal of Electronic Materials. 2004 ; Vol. 33, No. 2. pp. 114-117.
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Magnetic and magnetotransport properties in the n-type (Ga,Mn)N thin films. / Ham, Moon Ho; Jeong, Min Chang; Lee, Wooyoung; Myoung, Jae Min; Lee, Jeung Mi; Chang, Joon Yeon; Han, Suk Hee.

In: Journal of Electronic Materials, Vol. 33, No. 2, 01.01.2004, p. 114-117.

Research output: Contribution to journalArticle

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T1 - Magnetic and magnetotransport properties in the n-type (Ga,Mn)N thin films

AU - Ham, Moon Ho

AU - Jeong, Min Chang

AU - Lee, Wooyoung

AU - Myoung, Jae Min

AU - Lee, Jeung Mi

AU - Chang, Joon Yeon

AU - Han, Suk Hee

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AB - We present the magnetic and magnetotransport properties of epitaxial (Ga,Mn)N films with nominal Mn concentration (x = 0.1-0.73%) grown by plasma-enhanced molecular beam epitaxy (PEMBE). X-ray diffraction (XRD) reveals that (Ga,Mn)N has the single-phase wurtzite structure without secondary phases. The epitaxial (Ga,Mn)N films were found to exhibit n-type conductivity, ferromagnetic ordering with Curie temperature in the range 550 - 700 K, and in-plane magnetic anisotropy. The negative magnetoresistance (MR) was observed at temperatures below 50 K and was found to gradually increase with decreasing temperature.

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